NX3020NAKW [NEXPERIA]
30 V, 180 mA N-channel Trench MOSFETProduction;
| 型号： | NX3020NAKW |
| 厂家： | 
Nexperia |
| 描述： | 30 V, 180 mA N-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：712K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
29 October 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
•
•
•
•
Low threshold voltage
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
-
20
V
VGS = 10 V; Tamb = 25 °C
[1]
180
mA
Static characteristics
RDSon drain-source on-state
VGS = 10 V; ID = 100 mA; Tj = 25 °C
-
2.7
4.5
Ω
resistance
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[1]
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
3
1
2
3
G
S
D
gate
source
drain
G
1
2
SC-70 (SOT323)
S
017aaa255
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
NX3020NAKW
SC-70
plastic surface-mounted package; 3 leads
SOT323
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX3020NAKW
%3A
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-
-
-
-
180
110
720
260
300
mA
mA
mA
mW
mW
IDM
Ptot
peak drain current
total power dissipation
[2]
[1]
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
2 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
1100
150
150
150
Unit
mW
°C
Tsp = 25 °C
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
°C
°C
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
180
mA
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[1]
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa001
017aaa002
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
(°C)
- 25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 1. Normalized total power dissipation as a
function of ambient temperature
Fig. 2. Normalized continuous drain current as a
function of ambient temperature
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
3 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa682
1
t
= 100 µs
= 1 ms
p
Limit R
= V /I
DS
DSon
D
I
D
(A)
t
p
-1
-2
-3
10
t
= 10 ms
p
t
= 100 ms
p
DC; T = 25 °C
sp
10
10
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
415
350
Max
480
400
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
110
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
4 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa683
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0
0.02
0.01
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa684
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0
0.02
0.01
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.8
1.2
-
1.5
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
µA
VDS = 30 V; VGS = 0 V; Tj = 150 °C
All information provided in this document is subject to legal disclaimers.
29 October 2013
-
10
©
NX3020NAKW
Nexperia B.V. 2017. All rights reserved
Product data sheet
5 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
3.5
3.5
1
Unit
µA
µA
µA
µA
µA
µA
Ω
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 150 °C
VGS = 4.5 V; ID = 100 mA; Tj = 25 °C
VGS = 2.5 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 150 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
-
0.5
0.5
4.5
9.2
5.2
13
-
-
RDSon
drain-source on-state
resistance
2.7
5.5
3
Ω
Ω
4
Ω
gfs
forward
320
S
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 150 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.34
0.11
0.06
13
0.44
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
20
-
Coss
Crss
2.6
reverse transfer
capacitance
1.1
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 20 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5
10
-
ns
ns
ns
ns
5
turn-off delay time
fall time
34
17
68
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.7
1.2
V
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
6 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa663
017aaa664
-3
-4
-5
-6
0.5
10
D
10 V
3.5 V
I
D
(A)
4.5 V
I
(A)
0.4
3 V
10
0.3
0.2
0.1
0
min
typ
max
2.5 V
10
10
V
= 2 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
2.0
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa665
017aaa666
10
12
2 V
2.5 V
3 V
R
DSon
(Ω)
R
DSon
(Ω)
8
8
6
4
2
0
T = 150 °C
j
3.5 V
4.5 V
4
0
V
= 10 V
GS
T = 25 °C
j
0
0.1
0.2
0.3
0.4
0.5
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = 0.15 A
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
7 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa667
017aaa668
0.4
2.5
2.0
1.5
1.0
0.5
0
a
I
D
(A)
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa670
017aaa669
2
2.0
10
V
GS(th)
(V)
C
(pF)
C
iss
1.5
1.0
0.5
0
max
typ
10
C
C
oss
min
1
rss
-1
10
-1
2
10
1
10
10
-60
0
60
120
180
V
(V)
T (°C)
j
DS
f = 1 MHz; VGS = 0 V
ID = 0.25 mA; VDS = VGS
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
8 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
017aaa671
10
V
DS
V
GS
(V)
I
8
6
4
2
0
D
V
GS(pl)
V
V
GS(th)
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
0.2
0.4
0.6
0.8
Q
G
(nC)
ID = 0.15 A; VDS = 15 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa672
0.5
I
S
(A)
0.4
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
NX3020NAKW
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Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
9 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
12. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
p
Q
v
w
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
Fig. 18. Package outline SC-70 (SOT323)
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
10 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
13. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
(3×)
solder paste
occupied area
1.3
2.35
0.5
(3×)
1
Dimensions in mm
0.55
(3×)
sot323_fr
Fig. 19. Reflow soldering footprint for SC-70 (SOT323)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig. 20. Wave soldering footprint for SC-70 (SOT323)
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
11 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
NX3020NAKW v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20131029
Product data sheet
-
NX3020NAKW v.1
3D package outline added
•
•
•
Table 7 values of capacitance parameters corrected
Figure 13 corrected
NX3020NAKW v.1
20120830
Product data sheet
-
-
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
12 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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representation or warranty that such applications will be suitable for the
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the accuracy or completeness of information included herein and shall have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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products are sold subject to the general terms and conditions of commercial
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©
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Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
13 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
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of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
14 / 15
Nexperia
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 October 2013
©
NX3020NAKW
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
29 October 2013
15 / 15
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