PBHV3160Z-Q

更新时间:2024-09-19 05:41:53
品牌:NEXPERIA
描述:600 V, 0.1 A PNP high-voltage low VCEsat transistorProduction

PBHV3160Z-Q 概述

600 V, 0.1 A PNP high-voltage low VCEsat transistorProduction

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PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
21 April 2023  
Product data sheet  
1. General description  
PNP high-voltage low VCEsat transistor in a medium power SOT223 (SC-73) Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
High voltage  
Low collector-emitter saturation voltage VCEsat  
High collector current capability IC  
High collector current gain hFE at high IC  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Electronic ballast for fluorescent lighting  
LED driver for LED chain module  
LCD backlighting  
HID front lighting  
Automotive motor management  
Hook switch for wired telecom  
Switch Mode Power Supply (SMPS)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-600  
V
IC  
collector current  
DC current gain  
-
-
-0.1  
-
A
hFE  
VCE = -10 V; IC = -10 mA; Tamb = 25 °C  
70  
130  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
C
B
C
E
C
4
2
collector  
emitter  
B
3
E
1
2
3
4
collector  
sym028  
SC-73 (SOT223)  
 
 
 
 
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PBHV3160Z-Q  
SC-73  
plastic, surface-mounted package with increased heatsink; SOT223  
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
HV316Z  
PBHV3160Z-Q  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
Parameter  
Conditions  
Min  
Max  
-600  
-600  
-600  
Unit  
V
collector-base voltage  
open emitter  
-
-
-
VCEO  
collector-emitter voltage open base  
V
VCESM  
collector-emitter peak  
voltage  
VBE = 0 V  
V
VEBO  
IC  
emitter-base voltage  
collector current  
open collector  
-
-6  
V
-
-0.1  
0.65  
1.4  
A
Ptot  
total power dissipation  
Tamb ≤ 25 °C  
[1]  
[2]  
-
W
W
°C  
°C  
°C  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
150  
150  
Tamb  
Tstg  
-55  
-65  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
2 / 11  
 
 
 
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
aaa-013952  
1.6  
(1)  
P
tot  
(W)  
1.2  
0.8  
0.4  
0
(2)  
-60  
20  
100  
180  
T
(°C)  
amb  
(1) FR4 PCB, mounting pad for collector 6 cm2  
(2) FR4 PCB, standard footprint  
Fig. 1. Power derating curves  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
190  
89  
Unit  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
[2]  
-
-
-
-
-
-
Rth(j-sp)  
thermal resistance from  
junction to solder point  
20  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
aaa-013426  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.5  
2
10  
0.33  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
1
0
-1  
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, single-sided copper, tin-plated and standard footprint.  
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
3 / 11  
 
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
aaa-013427  
2
10  
duty cycle = 1  
0.5  
0.75  
Z
th(j-a)  
(K/W)  
0.33  
0.1  
0.2  
10  
0.05  
0.01  
0.02  
0
1
-1  
10  
-5  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.  
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
-100  
-10  
Unit  
nA  
ICBO  
collector-base cut-off  
current  
VCB = -400 V; IE = 0 A; Tamb = 25 °C  
VCB = -400 V; IE = 0 A; Tj = 150 °C  
VEB = -5 V; IC = 0 A; Tamb = 25 °C  
-
-
-
-
-
-
µA  
IEBO  
ICES  
emitter-base cut-off  
current  
-100  
nA  
collector-emitter cut-off VCE = -400 V; VBE = 0 V; Tamb = 25 °C  
current  
-
-
-100  
nA  
hFE  
DC current gain  
VCE = -10 V; IC = -10 mA; Tamb = 25 °C  
IC = -30 mA; IB = -6 mA; Tamb = 25 °C  
70  
-
130  
-
VCEsat  
collector-emitter  
-150  
-250  
mV  
mV  
saturation voltage  
VBEsat  
base-emitter saturation IC = -50 mA; IB = -5 mA; pulsed; tp ≤  
-
-
-950  
voltage  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
fT  
transition frequency  
collector capacitance  
VCE = -10 V; IC = -5 mA; f = 100 MHz  
-
-
38  
6
-
-
MHz  
pF  
Cc  
VCB = -20 V; IE = 0 A; ie = 0 A;  
f = 1 MHz; Tamb = 25 °C  
Ce  
emitter capacitance  
VEB = -0.5 V; IC = 0 A; ic = 0 A;  
f = 1 MHz; Tamb = 25 °C  
-
76  
-
pF  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
4 / 11  
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
aaa-013915  
aaa-014275  
200  
200  
h
h
FE  
FE  
150  
150  
(1)  
(2)  
100  
50  
0
100  
50  
0
(2)  
(3)  
(1)  
(3)  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
VCE = −10 V  
hFE = f(IC)  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Tamb = 25 °C  
(1) VCE = -10 V  
(2) VCE = -25 V  
(3) VCE = -50 V  
Fig. 4. DC current gain as a function of collector  
current; typical values  
Fig. 5. DC current gain as a function of collector  
current; typical values  
aaa-013916  
aaa-013917  
-0.10  
-1.2  
I
B
= -30 mA  
I
C
-27 mA  
-21 mA  
(A)  
V
BE  
(V)  
-24 mA  
-18 mA  
-0.08  
(1)  
-15 mA  
-9 mA  
-0.8  
-0.06  
-0.04  
-0.02  
0
-12 mA  
-6 mA  
(2)  
(3)  
-0.4  
-3 mA  
0
-1  
-10  
2
3
0
-1  
-2  
-3  
-4  
-5  
-1  
-10  
-10  
-10  
V
(V)  
I (mA)  
C
CE  
Tamb = 25 °C  
VCE = −10 V  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
Fig. 6. Collector current as a function of collector-  
emitter voltage; typical values  
Fig. 7. Base-emitter voltage as a function of collector  
current; typical values  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
5 / 11  
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
aaa-013918  
aaa-013919  
-1.2  
-10  
V
BEsat  
(V)  
V
CEsat  
(V)  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
(1)  
-1  
(2)  
(3)  
(1)  
(2)  
(3)  
-1  
-10  
-10  
-2  
-1  
-10  
2
3
-1  
-10  
2
3
-1  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC/IB = 5  
IC/IB = 5  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 100 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 8. Base-emitter saturation voltage as a function of Fig. 9. Collector-emitter saturation voltage as a  
collector current; typical values  
function of collector current; typical values  
aaa-013921  
aaa-013920  
4
-10  
10  
R
CEsat  
(Ω)  
V
CEsat  
(V)  
3
2
10  
(1)  
-1  
(2)  
(3)  
10  
(1)  
(2)  
(3)  
10  
-1  
-10  
1
-2  
-1  
-10  
10  
-1  
2
3
-1  
2
3
-10  
-1  
-10  
-10  
-10  
-10  
-1  
-10  
-10  
-10  
I
(mA)  
I (mA)  
C
C
IC/IB = 5  
Tamb = 25 °C  
(1) IC/IB = 10.0  
(2) IC/IB = 5.0  
(3) IC/IB = 2.5  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 11. Collector-emitter saturation resistance as a  
function of collector current; typical values  
Fig. 10. Collector-emitter saturation voltage as a  
function of collector current; typical values  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
6 / 11  
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
aaa-013922  
4
10  
R
CEsat  
(Ω)  
3
10  
10  
(1) (2) (3)  
2
10  
1
-1  
10  
-1  
2
3
-10  
-1  
-10  
-10  
-10  
I
(mA)  
C
Tamb = 25 °C  
(1) IC/IB = 10.0  
(2) IC/IB = 5.0  
(3) IC/IB = 2.5  
Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values  
11. Test information  
Quality information  
This product has been qualified in accordance with the Automotive Electronics Council (AEC)  
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in  
automotive applications.  
12. Package outline  
6.7  
6.3  
3.1  
2.9  
1.8  
1.5  
4
1.1  
0.7  
7.3  
3.7  
6.7 3.3  
1
2
3
0.8  
0.6  
0.32  
0.22  
2.3  
4.6  
Dimensions in mm  
04-11-10  
Fig. 13. Package outline SC-73 (SOT223)  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
7 / 11  
 
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
13. Soldering  
7
3.85  
3.6  
3.5  
0.3  
1.3 1.2  
(4×) (4×)  
solder lands  
solder resist  
4
6.1  
3.9  
7.65  
solder paste  
occupied area  
1
2
3
Dimensions in mm  
2.3  
2.3  
1.2  
(3×)  
1.3  
(3×)  
6.15  
sot223_fr  
Fig. 14. Reflow soldering footprint for SC-73 (SOT223)  
8.9  
6.7  
1.9  
solder lands  
4
solder resist  
6.2  
8.7  
occupied area  
Dimensions in mm  
1
2
3
preferred transport  
direction during soldering  
1.9  
(3×)  
2.7  
2.7  
1.9  
(2×)  
1.1  
sot223_fw  
Fig. 15. Wave soldering footprint for SC-73 (SOT223)  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
8 / 11  
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
Release date  
20230421  
Data sheet status  
Change notice  
Supersedes  
PBHV3160Z-Q v.1  
Product data sheet  
-
-
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
9 / 11  
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
equipment, nor in applications where failure or malfunction of an Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia and its suppliers accept  
no liability for inclusion and/or use of Nexperia products in such equipment or  
applications and therefore such inclusion and/or use is at the customer's own  
risk.  
15. Legal information  
Data sheet status  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Document status Product  
Definition  
[1][2]  
status [3]  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
detailed and full information. For detailed and full information see the relevant  
full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of commercial sale — Nexperia products are  
sold subject to the general terms and conditions of commercial sale, as  
published at http://www.nexperia.com/profile/terms, unless otherwise agreed  
in a valid written individual agreement. In case an individual agreement is  
concluded only the terms and conditions of the respective agreement shall  
apply. Nexperia hereby expressly objects to applying the customer’s general  
terms and conditions with regard to the purchase of Nexperia products by  
customer.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
valid in which the Nexperia product is deemed to offer functions and qualities  
beyond those described in the Product data sheet.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Disclaimers  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
consequences of use of such information. Nexperia takes no responsibility  
for the content in this document if provided by an information source outside  
of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
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Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Suitability for use in automotive applications — This Nexperia product  
has been qualified for use in automotive applications. Unless otherwise  
agreed in writing, the product is not designed, authorized or warranted to  
be suitable for use in life support, life-critical or safety-critical systems or  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
10 / 11  
 
Nexperia  
PBHV3160Z-Q  
600 V, 0.1 A PNP high-voltage low VCEsat transistor  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................1  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 3  
10. Characteristics............................................................4  
11. Test information..........................................................7  
12. Package outline.......................................................... 7  
13. Soldering..................................................................... 8  
14. Revision history..........................................................9  
15. Legal information......................................................10  
© Nexperia B.V. 2023. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 21 April 2023  
©
PBHV3160Z-Q  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2023. All rights reserved  
Product data sheet  
21 April 2023  
11 / 11  

PBHV3160Z-Q 相关器件

型号 制造商 描述 价格 文档
PBHV8050SA PANJIT SOT-23 获取价格
PBHV8110DA PANJIT SOT-23 获取价格
PBHV8110DA-AU PANJIT SOT-23 获取价格
PBHV8110DH PANJIT SOT-89 获取价格
PBHV8110DH-AU PANJIT SOT-89 获取价格
PBHV8110DW PANJIT SOT-223 获取价格
PBHV8110DW-AU PANJIT SOT-223 获取价格
PBHV8115T NXP 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 获取价格
PBHV8115T NEXPERIA 150 V, 1 A NPN high-voltage low VCEsat transistorProduction 获取价格
PBHV8115T,215 NXP PBHV8115T - 150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor TO-236 3-Pin 获取价格

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