PBHV9540X [NEXPERIA]
500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorProduction;
| 型号： | PBHV9540X |
| 厂家： | 
Nexperia |
| 描述： | 500 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistorProduction |
| 文件： | 总13页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
28 September 2017
Product data sheet
1. General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62)
medium power and flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8540X
2. Features and benefits
•
High voltage
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
Electronic ballast for fluorescent lighting
LED driver for LED chain module
LCD backlighting
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch mode power supply
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-400
V
IC
collector current
-
-
-
-
-
-0.5
-1
A
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
hFE
RCEsat
DC current gain
VCE = -5 V; IC = -20 mA; Tamb = 25 °C
140
-
450
collector-emitter
saturation resistance
IC = -200 mA; IB = -40 mA;
Tamb = 25 °C
[1]
2000 mΩ
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
E
C
B
emitter
collector
base
C
E
2
B
3
3
2
1
sym132
SOT89
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBHV9540X
SOT89
plastic surface-mounted package; die pad for good heat transfer; SOT89
3 leads
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PBHV9540X
%4H
[1] % = placeholder for manufacturing site code
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
2 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
Parameter
Conditions
Min
Max
-400
-400
-400
Unit
V
collector-base voltage
open emitter
-
-
-
VCEO
collector-emitter voltage open base
V
VCESM
collector-emitter peak
voltage
VBE = 0 V
V
VEBO
IC
ICM
IB
emitter-base voltage
collector current
open collector
-
-7
V
-
-0.5
-1
A
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
A
-
-250
0.52
1.5
mA
W
W
°C
°C
°C
Ptot
total power dissipation
[1]
[2]
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aab846
2.0
P
tot
(W)
1.6
(1)
1.2
0.8
0.4
0.0
(2)
- 75
- 25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
3 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
240
83
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
20
-
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
006aab847
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab848
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0
1
0.01
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
4 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A; Tamb = 25 °C
-400
-
-
V
breakdown voltage
V(BR)CEO
V(BR)CES
collector-emitter
breakdown voltage
IC = -2.5 mA; IB = 0 A; Tamb = 25 °C
IC = -2.5 mA; VBE = 0 V; Tamb = 25 °C
-400
-400
-
-
-
-
V
V
collector-emitter
breakdown voltage
(base shorted)
V(BR)EBO
emitter-base
IE = -100 µA; IC = 0 A; Tamb = 25 °C
-7
-
-
V
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = -320 V; IE = 0 A; Tamb = 25 °C
VCB = -320 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
-100
-10
nA
µA
nA
ICES
IEBO
hFE
collector-emitter cut-off VCE = -320 V; VBE = 0 V; Tamb = 25 °C
current
-100
emitter-base cut-off
current
VEB = -7 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
DC current gain
VCE = -5 V; IC = -20 mA; Tamb = 25 °C
140
140
-
-
-
-
450
400
-250
VCE = -5 V; IC = -100 mA; Tamb = 25 °C [1]
VCEsat
collector-emitter
saturation voltage
IC = -100 mA; IB = -20 mA;
Tamb = 25 °C
[1]
mV
mV
IC = -200 mA; IB = -40 mA;
Tamb = 25 °C
[1]
[1]
-
-
-
-
-400
RCEsat
VBEsat
collector-emitter
saturation resistance
2000 mΩ
base-emitter saturation IC = -100 mA; IB = -10 mA;
voltage
[1]
[1]
[1]
-
-
-
-
-
-
-0.9
-1
V
V
V
Tamb = 25 °C
IC = -200 mA; IB = -40 mA;
Tamb = 25 °C
VBE
base-emitter voltage
VCE = -10 V; IC = -200 mA;
Tamb = 25 °C
-0.9
td
tr
delay time
VCC = -6.2 V; IC = -100 mA;
IBon = -10 mA; IBoff = 20 mA;
Tamb = 25 °C
-
-
-
-
-
-
-
60
-
-
-
-
-
-
-
ns
rise time
3650
3710
810
900
1710
65
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = -5 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
14
-
pF
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
5 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ce
emitter capacitance
VEB = -0.5 V; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
235
-
pF
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
400
aaa-027295
aaa-027296
-1
I
B
(mA) = -550
-495
I
C
h
FE
-440
(A)
-385
-275
-0.8
-330
(1)
300
-220
-110
-0.6
-0.4
-0.2
0
-165
-55
(2)
200
(3)
100
0
10
-1
2
3
1
10
10
10
0
-1
-2
-3
-4
-5
I
(mA)
V
(V)
CE
C
VCE = -5 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
Fig. 4. DC current gain as a function of collector
current; typical values
aaa-027297
aaa-027298
-1.2
-1.2
V
BE
(V)
V
BEsat
(V)
-0.9
(1)
(1)
-0.8
-0.4
0
(2)
(3)
(2)
(3)
-0.6
-0.3
0
-1
10
2
3
-1
-10
2
3
1
10
10
10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
VCE = -5 V
IC/IB = 5
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
6 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
aaa-027299
aaa-027300
-10
-10
V
V
CEsat
(V)
CEsat
(V)
-1
-1
(1)
(2)
(3)
-1
-1
-10
-10
-10
-10
(1)
(2)
(3)
-2
-1
-10
-2
-1
-10
2
3
2
3
-1
-10
-10
-10
-1
-10
-10
-10
I
(mA)
I (mA)
C
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-027301
aaa-027302
3
4
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
3
10
10
2
10
2
(1)
(2)
10
(1)
(2)
(3)
10
(3)
1
1
-1
-1
10
10
-1
2
3
-1
2
3
4
10
1
10
10
10
10
1
10
10
10
10
I (mA)
C
I
(mA)
C
IC/IB = 5
Tamb = 25 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
7 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
11. Test information
-
I
B
input pulse
90 %
(idealized waveform)
-
I
(100 %)
Bon
10 %
-
I
Boff
output pulse
-
(idealized waveform)
I
C
90 %
-
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig. 12. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mgd624
Fig. 13. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
8 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
12. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig. 14. Package outline SOT89
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
solder lands
solder resist
0.85
1.7
1.2
4.6
4.85
solder paste
0.5
occupied area
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 15. Reflow soldering footprint for SOT89
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
9 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
6.6
2.4
3.5
solder lands
solder resist
7.6
0.5
occupied area
1.8
Dimensions in mm
(2×)
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig. 16. Wave soldering footprint for SOT89
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
10 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20170928
Data sheet status
Change notice
Supersedes
PBHV9540X v.1
Product data sheet
-
-
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
11 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
[1] Please consult the most recently issued document before initiating or
completing a design.
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
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Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
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or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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Draft — The document is a draft version only. The content is still under
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modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
12 / 13
Nexperia
PBHV9540X
400 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information......................................................... 8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information..................................................... 12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 September 2017
©
PBHV9540X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 September 2017
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