PBLS4004Y [NEXPERIA]

40 V PNP BISS loadswitchProduction;


型号：	PBLS4004Y
厂家：	Nexperia
描述：	40 V PNP BISS loadswitchProduction 开关光电二极管晶体管
文件：	总12页 (文件大小：224K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

PBLS4004Y; PBLS4004V

40 V PNP BISS loadswitch

Rev. 03 — 16 February 2009

Product data sheet

1. Product proﬁle

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor and NPN Resistor-

Equipped Transistor (RET) in one package.

Table 1.

Product overview

Type number

Package

NXP

JEITA

SC-88

PBLS4004Y

PBLS4004V

SOT363

SOT666

1.2 Features

I Low V_CEsat(BISS) and resistor-equipped transistor in one package

I Low threshold voltage (<1 V) compared to MOSFET

I Low drive power required

I Space-saving solution

I Reduction of component count

1.3 Applications

I Supply line switches

I Battery charger switches

I High-side switches for LEDs, drivers and backlights

I Portable equipment

1.4 Quick reference data

Table 2.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

TR1; PNP low V_CEsattransistor

V_CEO

I_C

collector-emitter voltage

collector current

open base

−40

−500

700

mΩ

[1]

R_CEsat

collector-emitter saturation I_C= −500 mA;

440

resistance

TR2; NPN resistor-equipped transistor

V_CEOcollector-emitter voltage

I_B= −50 mA

open base

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

Table 2.

Quick reference data …continued

Symbol

I_O

Parameter

Conditions

Min

Typ

Max

100

28.6

1.2

Unit

kΩ

output current

bias resistor 1 (input)

bias resistor ratio

15.4

0.8

R2/R1

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

2. Pinning information

Table 3.

Pinning

Description

Simpliﬁed outline

Graphic symbol

emitter TR1

base TR1

output (collector) TR2

GND (emitter) TR2

input (base) TR2

collector TR1

TR2

TR1

001aab555

sym036

3. Ordering information

Table 4.

Ordering information

Type number Package

Name

Description

Version

SOT363

SOT666

PBLS4004Y

PBLS4004V

SC-88

plastic surface-mounted package; 6 leads

4. Marking

Table 5.

Marking codes

Type number

PBLS4004Y

PBLS4004V

Marking code^[1]

S4*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

2 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

5. Limiting values

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

TR1; PNP low V_CEsattransistor

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

open emitter

open base

−40

−6

open collector

−500

−1

I_CM

peak collector current

base current

single pulse; t_p≤ 1 ms

I_B

−50

−100

200

I_BM

peak base current

total power dissipation

[1]

P_tot

T_amb≤ 25 °C

TR2; NPN resistor-equipped transistor

V_CBO

V_CEO

V_EBO

V_I

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

open emitter

open base

open collector

positive

+40

−10

100

200

negative

I_O

output current

I_CM

peak collector current

total power dissipation

single pulse; t_p≤ 1 ms

[1]

P_tot

T_amb≤ 25 °C

Per device

P_tot

total power dissipation

junction temperature

ambient temperature

storage temperature

300

°C

T_j

150

T_amb

T_stg

−65

+150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

6. Thermal characteristics

Table 7.

Thermal characteristics

Symbol

Per device

R_th(j-a)

Parameter

Conditions

Min

Typ

Max Unit

thermal resistance from

junction to ambient

in free air

[1]

SOT363

SOT666

416

K/W

[1][2]

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reﬂow soldering is the only recommended soldering method.

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

3 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

7. Characteristics

Table 8.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter Conditions

TR1; PNP low V_CEsattransistor

Min

Typ

Max Unit

I_CBO

collector-base cut-off V_CB= −40 V; I_E= 0 A

−100 nA

current

V_CB= −40 V; I_E= 0 A;

−50

µA

T_j= 150 °C

I_EBO

h_FE

emitter-base cut-off

current

V_EB= −5 V; I_C= 0 A

−100 nA

DC current gain

V_CE= −2 V; I_C= −10 mA

V_CE= −2 V; I_C= −100 mA

V_CE= −2 V; I_C= −500 mA

I_C= −10 mA; I_B= −0.5 mA

I_C= −100 mA; I_B= −5 mA

I_C= −200 mA; I_B= −10 mA

I_C= −500 mA; I_B= −50 mA

200

[1]

150

V_CEsat

collector-emitter

saturation voltage

−50

−130 mV

−200 mV

−350 mV

[1]

R_CEsat

V_BEsat

V_BEon

f_T

collector-emitter

saturation resistance

440

700

−1.2

−1.1

mΩ

[1]

base-emitter

saturation voltage

I_C= −500 mA; I_B= −50 mA

V_CE= −2 V; I_C= −100 mA

base-emitter

turn-on voltage

transition frequency

I_C= −100 mA; V_CE= −5 V;

f = 100 MHz

100

300

MHz

C_c

collector capacitance V_CB= −10 V; I_E= i_e= 0 A;

f = 1 MHz

TR2; NPN resistor-equipped transistor

I_CBOcollector-base cut-off V_CB= 50 V; I_E= 0 A

100

current

I_CEO

collector-emitter

cut-off current

V_CE= 30 V; I_B= 0 A

µA

V_CE= 30 V; I_B= 0 A;

T_j= 150 °C

I_EBO

emitter-base cut-off

current

V_EB= 5 V; I_C= 0 A

180

µA

h_FE

DC current gain

V_CE= 5 V; I_C= 5 mA

V_CEsat

collector-emitter

I_C= 10 mA; I_B= 0.5 mA

150

saturation voltage

V_I(off)

V_I(on)

off-state input voltage V_CE= 5 V; I_C= 100 µA

on-state input voltage V_CE= 0.3 V; I_C= 5 mA

bias resistor 1 (input)

1.1

1.7

0.8

2.5

15.4 22

28.6 kΩ

R2/R1

C_c

bias resistor ratio

0.8

1.2

collector capacitance V_CB= 10 V; I_E= i_e= 0 A;

f = 1 MHz

2.5

[1] Pulse test: t_p≤ 300 µs; δ ≤ 0.02.

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

4 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

006aaa388

006aaa394

600

−1

(mA) = −30

−27

(1)

(2)

(A)

−24

−21

−18

−0.8

−15

−12

−9

400

200

−0.6

−0.4

−0.2

−6

−3

(3)

−10

−1

−2

−3

−4

−5

(V)

−1

−10

(mA)

V_CE= −2 V

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 1. TR1 (PNP): DC current gain as a function of

collector current; typical values

Fig 2. TR1 (PNP): Collector current as a function of

collector-emitter voltage; typical values

006aaa389

006aaa392

−1.1

BEsat

(V)

−0.9

−0.7

−0.5

−0.3

−0.1

(1)

(2)

(3)

(1)

(2)

(3)

−0.7

−0.5

−0.3

− 0.1

−1

−10

−1

−10

−1

−10

(mA)

I (mA)

V_CE= −2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 3. TR1 (PNP): Base-emitter voltage as a function

of collector current; typical values

Fig 4. TR1 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

5 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

006aaa390

006aaa391

−1

CEsat

(V)

−1

−10

(1)

(2)

(1)

(2)

(3)

−2

−10

−1

−10

−1

−10

(mA)

−10

−1

−10

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 5. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 6. TR1 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa393

006aaa395

CEsat

(Ω)

(1)

(2)

(3)

(1)

(2)

(3)

−1

−10

−1

−10

−1

−10

(mA)

I (mA)

I_C/I_B= 20

T_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 7. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

Fig 8. TR1 (PNP): Collector-emitter saturation

resistance as a function of collector current;

typical values

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

6 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

006aaa038

006aaa039

−1

(1)

(2)

(3)

CEsat

(V)

(2)

(3)

−2

−1

(mA)

I (mA)

V_CE= 5 V

I_C/I_B= 20

(1) T_amb= 150 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −40 °C

Fig 9. TR2 (NPN): DC current gain as a function of

collector current; typical values

Fig 10. TR2 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

006aaa040

006aaa041

I(on)

I(off)

(V)

(1)

(2)

(1)

(2)

(3)

−1

−2

−1

(mA)

I (mA)

V_CE= 0.3 V

V_CE= 5 V

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −40 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 11. TR2 (NPN): On-state input voltage as a

function of collector current; typical values

Fig 12. TR2 (NPN): Off-state input voltage as a

function of collector current; typical values

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

7 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

8. Package outline

2.2

1.8

1.1

0.8

1.7

1.5

0.6

0.5

0.45

0.15

0.3

0.1

2.2 1.35

2.0 1.15

1.7 1.3

1.5 1.1

pin 1

index

pin 1 index

0.25

0.10

0.3

0.2

0.18

0.08

0.27

0.17

0.65

0.5

1.3

Dimensions in mm

06-03-16

Dimensions in mm

04-11-08

Fig 13. Package outline SOT363 (SC-88)

Fig 14. Package outline SOT666

9. Packing information

Table 9.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number

PBLS4004Y

PBLS4004V

Package

SOT363

SOT666

Description

Packing quantity

3000

-115

-125

4000

8000

10000

[2]

[3]

4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

2 mm pitch, 8 mm tape and reel

4 mm pitch, 8 mm tape and reel

-135

-165

-315

-115

[1] For further information and the availability of packing methods, see Section 12.

[2] T1: normal taping

[3] T2: reverse taping

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

8 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

10. Revision history

Table 10. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PBLS4004Y_PBLS4004V_3 20090216

Product data sheet

PBLS4004Y_PBLS4004V_2

Modiﬁcations:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Figure 5: y-axis value unit amended

• Figure 6: y-axis value unit amended

• Section 11 “Legal information”: updated

PBLS4004Y_PBLS4004V_2 20050711

Product data sheet

PBLS4004Y_PBLS4004V_1

PBLS4004Y_PBLS4004V_1 20041213

Product data sheet

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

9 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

11. Legal information

11.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

11.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

11.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PBLS4004Y_PBLS4004V_3

Product data sheet

Rev. 03 — 16 February 2009

10 of 11

PBLS4004Y; PBLS4004V

NXP Semiconductors

40 V PNP BISS loadswitch

13. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

Packing information. . . . . . . . . . . . . . . . . . . . . . 8

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.1

11.2

11.3

11.4

Contact information. . . . . . . . . . . . . . . . . . . . . 10

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 February 2009

Document identifier: PBLS4004Y_PBLS4004V_3

PBLS4004Y [NEXPERIA]

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