PBSM5240PFH [NEXPERIA]
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETProduction;
| 型号： | PBSM5240PFH |
| 厂家： | 
Nexperia |
| 描述： | 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFETProduction |
| 文件： | 总20页 (文件大小：1439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSM5240PFH
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel
Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The
device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High energy efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Load switch
Battery-driven devices
Charging circuits
Power management
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max Unit
PNP low VCEsat (BISS) transistor
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
-
40
1.8
2
V
A
A
[1]
[1][5]
ICRM
repetitive peak collector
current
[1]
[2]
ICM
peak collector current
single pulse; tp 1 ms
-
-
-
3
A
RCEsat
collector-emitter
saturation resistance
IC = 500 mA;
IB = 50 mA
240
340
m
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
Table 1.
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max Unit
N-channel Trench MOSFET
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tamb = 25 C
Tamb = 25 C
-
-
-
-
-
-
30
V
V
A
8
[3]
[4]
Tamb = 25 C;
VGS = 10 V
0.66
RDSon
drain-source on-state
resistance
Tj = 25 C; VGS = 4.5 V;
ID = 0.2 A
-
370
580
m
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Pulse test: tp 300 s; 0.02.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4] Pulse test: tp 300 s; 0.01.
[5] Pulse test: tp 20 ms; 0.10.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
emitter
base
Simplified outline
Graphic symbol
6, 7
5
4
6
5
4
2
3
drain
7
8
4
source
gate
5
1
2
3
1
2
3, 8
6
collector
collector
drain
Transparent top view
017aaa079
7
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSM5240PFH DFN2020-6 plastic thermal enhanced ultra thin small outline
SOT1118
package; no leads; 6 terminals; body 2 2 0.65 mm
4. Marking
Table 4.
Marking code
Type number
Marking code
PBSM5240PFH
1T
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
2 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
PNP low VCEsat (BISS) transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
-
-
-
-
-
40
40
5
V
V
V
A
A
collector-emitter voltage open base
emitter-base voltage
collector current
open collector
[1]
1.8
2
[1][4]
ICRM
repetitive peak collector
current
[1]
ICM
peak collector current
single pulse;
-
3
A
tp 1 ms
[1]
[1]
IB
base current
-
-
300
1
mA
A
IBM
peak base current
single pulse;
tp 1 ms
[1]
[2]
Ptot
total power dissipation
Tamb 25 C
-
-
1.1
W
W
1.25
N-channel Trench MOSFET
VDS
VDG
drain-source voltage
Tamb = 25 C
-
-
30
30
V
V
drain-gate voltage
Tamb = 25 C;
RGS = 20 k
VGS
ID
gate-source voltage
drain current
Tamb = 25 C
VGS = 10 V
-
8
V
[3]
Tamb = 25 C
Tamb = 100 C
-
-
-
660
420
3.56
mA
mA
A
IDM
peak drain current
Tamb = 25 C;
single pulse;
tp 10 s
[3]
Ptot
total power dissipation
Tamb = 25 C
-
-
760
660
mW
mA
Source-drain diode
IS
source current
Tamb = 25 C
Per device
Tj
junction temperature
ambient temperature
storage temperature
-
150
C
C
C
Tamb
Tstg
55
65
+150
+150
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[4] Pulse test: tp 20 ms; 0.10.
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
3 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aac608
1.4
P
tot
(1)
(2)
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
(3)
(4)
–75
–25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
(2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
(3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
(4) FR4 PCB, single-sided copper, standard footprint
Fig 1. BISS transistor: Power derating curves
03aa17
03aa25
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
(°C)
T
(°C)
sp
sp
Ptot
-----------------------
ID
-------------------
Pder
=
100 %
Ider
=
100 %
Ptot25C
ID25C
Fig 2. MOSFET: Normalized total power dissipation
as a function of solder point temperature
Fig 3. MOSFET: Normalized continuous drain current
as a function of solder point temperature
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
4 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aac609
10
I
D
Limit R
= V /I
DS D
(A)
DSon
1
(1)
(2)
(3)
–1
10
10
(4)
(5)
–2
10
–1
2
1
10
10
V
(V)
DS
IDM = single pulse
(1) tp = 1 ms
(2) DC; Tsp = 25 C
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tamb = 25 C; drain mounting pad 1 cm2
Fig 4. MOSFET: Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
5 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
PNP low VCEsat (BISS) transistor
Conditions
Min
Typ
Max
Unit
[1]
[2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
115
100
K/W
K/W
N-channel Trench MOSFET
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
165
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
006aac610
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, standard footprint
Fig 5. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
6 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aac611
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
0.75
0.5
10
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, mounting pad for collector 1 cm2
Fig 6. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac612
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
1
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, mounting pad for collector 6 cm2
Fig 7. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
7 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aac613
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.2
10 0.1
0.05
0.01
0.02
0
1
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aac614
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.1
0.25
0.2
10
0
0.05
0.02
0.01
1
–3
–2
–1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, mounting pad for drain 1 cm2
Fig 9. MOSFET: Transient thermal impedance from junction to ambient as a function of pulse duration; typical
values
PBSM5240PFH
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
8 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
7. Characteristics
Table 7.
Characteristics for PNP low VCEsat transistor
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base
cut-off current
VCB = 30 V; IE = 0 A
-
-
-
-
100 nA
VCB = 30 V; IE = 0 A;
Tj = 150 C
50
A
ICES
IEBO
hFE
collector-emitter cut-off VCE = 30 V; IB = 0 A
current
-
-
-
-
100 nA
100 nA
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
[1]
DC current gain
VCE = 5 V
IC = 1 mA
100
-
-
IC = 100 mA
100
-
-
IC = 1 A
75
-
-
-
[1]
[1]
[1]
[1]
VCEsat
collector-emitter
saturation voltage
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 500 mA; IB = 50 mA
85
140 mV
-
120 170 mV
200 310 mV
-
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
-
240
340
1.1
1
m
[1]
[1]
base-emitter saturation IC = 1 A; IB = 100 mA
-
-
-
-
-
V
voltage
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
-
V
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
100
-
-
MHz
pF
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
15
f = 1 MHz
[1] Pulse test: tp 300 s; 0.02.
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
9 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aac783
ꢀꢀꢀꢁꢂꢂꢃꢄꢃꢅ
400
ꢇꢌꢍꢏ
ꢐ ꢃꢄꢓꢑꢅꢃꢔꢃꢇꢊꢉ
ꢒ
h
FE
ꢇꢊꢌꢍꢎ
ꢇꢌꢎꢍꢏ
ꢐ
ꢁ
ꢄꢑꢅ
(1)
(2)
(3)
ꢇꢌꢕꢍꢊ
ꢇꢌꢉꢍꢉ
300
ꢇꢌꢍꢊ
ꢇꢌꢊ
ꢇꢕꢍꢎ
ꢇꢉꢍꢏ
200
100
0
ꢇꢖꢍꢊ
ꢇꢆꢍꢎ
ꢆꢍꢆ
ꢇꢊꢍꢉ
-1
2
3
-10
-1
-10
-10
-10
ꢆ
ꢇꢌ
ꢇꢊ
ꢇꢋ
ꢇꢉ
ꢇꢈ
I
C
(mA)
ꢀ
ꢃꢄꢀꢅ
ꢁꢂ
VCE = 5 V
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(3)
Tamb = 55 C
Fig 10. PNP transistor: DC current gain as a function
of collector current; typical values
Fig 11. PNP transistor: Collector current as a function
of collector-emitter voltage; typical values
006aac615
006aaa468
–1.6
−1.3
V
BE
V
(V)
BEsat
(V)
–1.2
−0.9
(1)
(1)
(2)
(3)
–0.8
–0.4
–0.0
(2)
−0.5
(3)
−0.1
–1
2
3
I
4
−1
2
3
I
4
–10
–1
–10
–10
–10
–10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
C
C
VCE = 5 V
amb = 55 C
IC/IB = 20
(1) Tamb = 55 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 100 C
Fig 12. PNP transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 13. PNP transistor: Base-emitter saturation
voltage as a function of collector current;
typical values
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
10 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
006aaa466
006aaa471
−1
−10
V
CEsat
(V)
V
CEsat
−1
(V)
−1
−1
−2
−10
−10
−10
−10
(1)
(2)
(1)
(2)
(3)
(3)
−2
−3
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
−10
I (mA)
C
I
(mA)
C
IC/IB = 20
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(3)
Tamb = 55 C
Fig 14. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 15. PNP transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa470
006aaa472
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
(1)
(2)
(3)
10
10
(1)
(2)
1
1
(3)
−1
−10
−1
−10
10
10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 C
(1) Tamb = 100 C
(2) Tamb = 25 C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(3)
Tamb = 55 C
Fig 16. PNP transistor: Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig 17. PNP transistor: Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
11 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
Table 8.
Characteristics for N-channel Trench MOSFET
Tj = 25 C unless otherwise specified.
Symbol Parameter
Static characteristics
Conditions
Min
Typ
Max Unit
V(BR)DSS
drain-source breakdown ID = 10 A; VGS = 0 V
voltage
Tj = 25 C
30
27
-
-
-
-
V
V
Tj = 55 C
VGS(th)
gate-source threshold
voltage
ID = 250 A; VDS = VGS
Tj = 25 C
0.45 0.7
0.95
-
V
V
V
Tj = 150 C
0.25
-
-
-
Tj = 55 C
1.15
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V
Tj = 25 C
-
-
-
-
1
A
A
Tj = 150 C
-
100
IGSS
VGS = 8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A
Tj = 25 C
10
100 nA
[1]
RDSon
drain-source on-state
resistance
-
-
-
-
370
663
440
540
580
985
690
920
m
m
m
m
Tj = 150 C
VGS = 2.5 V; ID = 0.1 A
VGS = 1.8 V; ID = 75 mA
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 1 A; VDS = 15 V;
VGS = 4.5 V
-
-
-
-
-
-
0.89
0.1
0.2
43
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
VGS = 0 V; VDS = 25 V;
f = 1 MHz
Coss
Crss
7.7
4.8
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; RL = 15 ;
VGS = 10 V; RG = 6
-
-
-
-
4.0
7.5
18
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
4.5
Source-drain diode
VSD
source-drain voltage
IS = 0.3 A; VGS = 0 V
-
0.76 1.2
V
[1] Pulse test: tp 300 s; 0.01.
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
12 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
03an94
03am43
−3
10
2.5
ID
4.5
3
2.5
(A)
I
D
(A)
2
1.5
1
2
−4
−5
−6
10
10
10
min
typ
max
1.8
VGS (V) = 1.5
0.5
0
0
0.5
1
1.5
2
0
0.4
0.8
1.2
V
DS (V)
V
(V)
GS
Tj = 25 C
Tj = 25 C; VDS = 5 V
Fig 18. MOSFET: Output characteristics: drain current
as a function of drain-source voltage;
typical values
Fig 19. MOSFET: Subthreshold drain current as a
function of gate-source voltage
006aac616
03an96
1.0
2.5
R
ID
(A)
2
DSon
(Ω)
0.8
0.6
0.4
0.2
0.0
(1)
(2)
Tj = 150 °C
25 °C
1.5
1
(3)
(4)
(5)
0.5
0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V
GS (V)
I
D
(A)
Tj = 25 C
VDS > ID RDSon
(1) VGS = 1.8 V
(2) VGS = 2.0 V
(3)
VGS = 2.5 V
(4) VGS = 3.0 V
(5) VGS = 4.5 V
Fig 20. MOSFET: Drain-source on-state resistance as
a function of drain current; typical values
Fig 21. MOSFET: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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13 of 20
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40 V, 2 A PNP BISS/Trench MOSFET module
03aj65
006aac618
1.2
1.8
a
V
GS(th)
(V)
0.9
0.6
0.3
0
max
typ
1.2
min
0.6
0.0
−60
0
60
120
180
–60
0
60
120
180
T (°C)
j
T (°C)
j
ID = 1 mA; VDS = VGS
RDSon
-----------------------------
RDSon25C
a =
Fig 22. MOSFET: Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
Fig 23. MOSFET: Gate-source threshold voltage as a
function of junction temperature
03an98
03an99
102
5
ID = 1 A
VGS
(V)
Tj = 25 °C
VDS = 15 V
C
(pF)
Ciss
4
3
2
1
0
10
Coss
Crss
1
10-1
1
10
102
0
0.2
0.4
0.6
0.8
1
VDS (V)
QG (nC)
f = 1 MHz; VGS = 0 V
Fig 24. MOSFET: Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
Fig 25. MOSFET: Gate-source voltage as a function of
gate charge; typical values
PBSM5240PFH
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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14 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
03an97
1
V
GS
= 0 V
I
S
(A)
0.8
0.6
0.4
0.2
0
V
DS
I
D
V
GS(pl)
V
GS(th)
GS
V
150 °C
T = 25 °C
Q
Q
j
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
0
0.2
0.4
0.6
0.8
1
V
(V)
SD
017aaa137
Fig 26. MOSFET: Gate charge waveform definitions
Fig 27. MOSFET: Source current as a function of
source-drain voltage; typical values
8. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
4
6
0.65
(4×)
2.1
0.54
1.9
0.35
0.25
(6×)
0.44
1
(2×)
0.3
0.2
Dimensions in mm
10-05-31
Fig 28. Package outline DFN2020-6 (SOT1118)
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
PBSM5240PFH DFN2020-6 4 mm pitch, 8 mm tape and reel
(SOT1118)
-115
[1] For further information and the availability of packing methods, see Section 13.
PBSM5240PFH
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
15 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
10. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
0.875
solder paste
1.05 1.15
2.25
(2×) (2×)
solder resist
occupied area
Dimensions in mm
0.35
0.72
(6×)
(2×)
0.45
0.82
(6×)
(2×)
sot1118_fr
Fig 29. Reflow soldering footprint DFN2020-6 (SOT1118)
PBSM5240PFH
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
16 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
11. Revision history
Table 10. Revision history
Document ID
Release date
20120620
Data sheet status
Change notice
Supersedes
PBSM5240PFH v.1
Product data sheet
-
-
PBSM5240PFH
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
17 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
Suitability for use — Nexperia products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
PBSM5240PFH
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Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
18 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
non-automotive qualified products in automotive equipment or applications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PBSM5240PFH
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 20 June 2012
19 of 20
PBSM5240PFH
Nexperia
40 V, 2 A PNP BISS/Trench MOSFET module
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 6
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Packing information . . . . . . . . . . . . . . . . . . . . 15
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 20 June 2012
相关型号：
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