PBSS304ND [NEXPERIA]
80 V, 3 A NPN low VCEsat (BISS) transistorProduction;型号: | PBSS304ND |
厂家: | Nexperia |
描述: | 80 V, 3 A NPN low VCEsat (BISS) transistorProduction |
文件: | 总17页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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PBSS304ND
80 V, 3 A NPN low VCEsat (BISS) transistor
Rev. 02 — 17 December 2007
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS304PD.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I High-voltage DC-to-DC conversion
I High-voltage MOSFET gate driving
I High-voltage motor control
I High-voltage power switches (e.g. motors, fans)
I Thin Film Transistor (TFT) backlight inverter
I Automotive applications
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
80
3
Unit
V
collector-emitter voltage open base
collector current
-
-
-
-
-
-
[1]
[2]
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
6
A
RCEsat
collector-emitter
IC = 2 A;
-
68
88
mΩ
saturation resistance
IB = 200 mA
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
collector
collector
base
Simplified outline
Symbol
6
5
4
1, 2, 5, 6
2
3
3
4
emitter
1
2
3
4
5
collector
collector
sym014
6
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS304ND
SC-74
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS304ND
AF
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
2 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
80
80
5
Unit
V
collector-base voltage
open emitter
-
-
-
-
-
-
collector-emitter voltage open base
V
emitter-base voltage
collector current
open collector
V
[1]
[2]
1
A
3
A
ICM
peak collector current
single pulse;
6
A
tp ≤ 1 ms
IB
base current
-
-
0.8
2
A
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
[1]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
360
600
750
1.1
mW
mW
mW
W
-
[4]
-
[2]
-
[1][5]
-
2.5
W
Tj
junction temperature
ambient temperature
storage temperature
-
150
+150
+150
°C
Tamb
Tstg
−65
−65
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Pulse test: tp ≤ 10 ms; δ ≤ 10 %.
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
3 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
006aaa270
1600
P
tot
(mW)
1200
800
400
0
(1)
(2)
(3)
(4)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
350
208
167
113
50
Unit
K/W
K/W
K/W
K/W
K/W
K/W
[1]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
-
-
-
-
-
-
junction to ambient
[2]
[3]
[4]
[1][5]
Rth(j-sp)
thermal resistance from
junction to solder point
45
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Pulse test: tp ≤ 10 ms; δ ≤ 10 %.
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
4 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
006aaa271
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
0.33
0.5
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa272
3
10
Z
th(j-a)
duty cycle =
(K/W)
1
0.75
2
10
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
5 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
006aaa273
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa751
3
10
Z
th(j-a)
(K/W)
duty cycle =
2
1
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
6 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = 80 V; IE = 0 A
Min
Typ
Max
100
50
Unit
nA
ICBO
-
-
-
-
current
VCB = 80 V; IE = 0 A;
µA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = 64 V; VBE = 0 V
-
-
-
-
100
100
nA
nA
emitter-base cut-off VEB = 5 V; IC = 0 A
current
DC current gain
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 3 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 5 A
VCE = 2 V; IC = 6 A
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 2 A; IB = 200 mA
IC = 3 A; IB = 150 mA
IC = 3 A; IB = 300 mA
IC = 4 A; IB = 400 mA
IC = 5 A; IB = 0.5 A
IC = 6 A; IB = 0.6 A
IC = 2 A; IB = 200 mA
240
360
280
165
105
75
-
[1]
[1]
[1]
[1]
[1]
[1]
190
-
115
-
70
45
35
25
-
-
-
55
-
40
-
VCEsat
collector-emitter
saturation voltage
40
55
105
175
275
255
335
415
505
88
mV
mV
mV
mV
mV
mV
mV
mV
mΩ
-
80
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
135
215
200
265
335
400
68
-
-
-
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
-
base-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 3 A; IB = 150 mA
IC = 3 A; IB = 300 mA
-
-
-
-
-
-
0.79
0.81
0.84
0.92
0.95
0.81
0.87
0.89
0.92
1
V
V
V
V
V
V
[1]
[1]
[1]
1.03
1
VBEon
base-emitter turn-on VCE = 2 V; IC = 2 A
voltage
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
7 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
VCC = 9.2 V; IC = 2 A;
Bon = 0.1 A; IBoff = −0.1 A
Min
Typ
13
Max
Unit
ns
td
tr
delay time
rise time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I
167
180
352
231
583
140
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
ns
transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
18
-
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
8 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
006aaa711
006aaa712
600
6
4
2
0
I
= 150 mA
135
120
105
90
B
(1)
h
I
C
(A)
FE
75
60
45
(2)
(3)
400
30
15
200
0
10
−1
2
3
4
1
10
10
10
10
(mA)
0
0.4
0.8
1.2
1.6
V
2.0
(V)
I
C
CE
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
006aaa713
006aaa714
1.2
1.2
V
(V)
V
BE
BEsat
(V)
0.8
0.8
0.4
0
(1)
(2)
(3)
(1)
(2)
(3)
0.4
0
10
−1
2
3
4
−1
2
3
4
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
9 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
006aaa715
006aaa716
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
−1
−1
−2
−3
10
10
(1)
(2)
(3)
−2
10
10
10
−3
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa717
006aaa718
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
(1)
(2)
(3)
1
1
(1)
(2)
(3)
−1
−1
10
10
−2
−2
10
10
−1
2
3
4
−1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
10 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 14. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 9.2 V; IC = 2 A; IBon = 0.1 A; IBoff = −0.1 A
Fig 15. Test circuit for switching times
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
11 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 16. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
10000
-135
[2]
[3]
PBSS304ND SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115
-125
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
12 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
2.825
3.30
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 17. Reflow soldering footprint SOT457 (SC-74).
5.30
solder lands
solder resist
occupied area
5.05
0.45 1.45 4.45
msc423
1.40
4.30
Dimensions in mm
Fig 18. Wave soldering footprint SOT457 (SC-74).
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
13 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBSS304ND_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20071217
Product data sheet
-
PBSS304ND_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 6: typing error for maximum value on 6 cm2 footprint amended
• Section 13 “Legal information”: updated
PBSS304ND_1
20060407
Product data sheet
-
-
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
14 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PBSS304ND_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 17 December 2007
15 of 16
PBSS304ND
NXP Semiconductors
80 V, 3 A NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 17 December 2007
Document identifier: PBSS304ND_2
相关型号:
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