PBSS306PZ_技术文档

PBSS306PZ

100 V, 4.1 A PNP low VCEsat (BISS) transistor

Rev. 3 — 26 July 2011

Product data sheet

1. Product profile

1.1 General description

PNP low V_CEsatBreakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

1.2 Features and benefits

 Low collector-emitter saturation

 High efficiency due to less heat

voltage V_CEsat

generation

 High collector current capability

 Smaller Printed-Circuit Board (PCB)

I_Cand I_CM

area than for conventional transistors

 High collector current gain (h_FE) at

 AEC-Q101 qualified

high I_C

1.3 Applications

 High-voltage DC-to-DC conversion

 High-voltage MOSFET gate driving

 High-voltage motor control

 High-voltage power switches

(e.g. motors, fans)

 Automotive applications

1.4 Quick reference data

Table 1.

Symbol

V_CEO

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter

voltage

open base

-

-100

V

I_C

collector current

-

-4.1

-8.2

80

A

I_CM

peak collector current single pulse; t_p≤ 1 ms

-

A

R_CEsat

collector-emitter

saturation resistance

I_C= -4 A; I_B= -400 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

56

mΩ

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

2. Pinning information

Table 2.

Pinning information

Symbol Description

1

Simplified outline

Graphic symbol

B

C

E

C

base

2, 4

4

2

collector

emitter

collector

3

1

4

1

2

3

sym028

SOT223 (SC-73)

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PBSS306PZ

SC-73

plastic surface-mounted package with increased heatsink;

4 leads

SOT223

4. Marking

Table 4.

Marking codes

Type number

PBSS306PZ

Marking code

S306PZ

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

-100

-5

Unit

V

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

-

V

open collector

-

V

-

-4.1

-8.2

0.7

A

I_CM

peak collector current

total power dissipation

single pulse; t_p≤ 1 ms

T_amb≤ 25 °C

-

A

[1]

[2]

[3]

P_tot

-

W

°C

-

1.7

-

2

T_j

junction temperature

ambient temperature

storage temperature

-

150

T_amb

T_stg

-65

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBSS306PZ

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©

Product data sheet

Rev. 3 — 26 July 2011

2 of 15

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

006aaa560

2.5

P

tot

(W)

(1)

(2)

2.0

1.5

1.0

0.5

0

(3)

−75

−25

25

75

125

T

175

(°C)

amb

(1) Ceramic PCB, Al₂O₃, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm²

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

6. Thermal characteristics

Table 6.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Min

Typ

Max

179

74

Unit

K/W

[1]

thermal resistance

from junction to

ambient

in free air

-

[2]

[3]

63

R_th(j-sp)

thermal resistance

from junction to solder

point

15

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².

[3] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.

PBSS306PZ

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©

Product data sheet

Rev. 3 — 26 July 2011

3 of 15

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

006aaa561

3

10

Z

th(j-a)

(K/W)

δ = 1

0.75

0.33

2

10

0.50

0.20

0.10

0.05

10

0.02

0.01

1

0

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aaa562

2

10

δ = 1

0.75

Z

th(j-a)

0.50

(K/W)

0.33

0.20

0.10

0.05

10

0.02

0.01

1

0

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

FR4 PCB, mounting pad for collector 6 cm²

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PBSS306PZ

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Product data sheet

Rev. 3 — 26 July 2011

4 of 15

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

006aaa563

2

10

δ = 1

0.75

0.33

Z

th(j-a)

(K/W)

0.50

0.20

10

0.10

0.05

0.02

1

0.01

0

−1

10

−5

−4

−3

−2

−1

2

3

10

1

10

t

(s)

p

Ceramic PCB, Al₂O₃standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7.

Symbol

I_CBO

Characteristics

Parameter

Conditions

Min

Typ

Max

-100

-50

Unit

nA

collector-base cut-off

current

V_CB= -80 V; I_E= 0 A; T_amb= 25 °C

-

V_CB= -80 V; I_E= 0 A; T_j= 150 °C;

T_amb= 25 °C

µA

I_CES

I_EBO

h_FE

collector-emitter cut-off V_CE= -48 V; V_BE= 0 V; T_amb= 25 °C

current

-

-100

-

nA

emitter-base cut-off

current

V_EB= -5 V; I_C= 0 A; T_amb= 25 °C

-

DC current gain

V_CE= -2 V; I_C= -0.5 A; pulsed;

200

300

260

175

40

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_CE= -2 V; I_C= -1 A; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

150

-

V_CE= -2 V; I_C= -2 A; pulsed;

100

-

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

V_CE= -2 V; I_C= -4 A; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

25

-

V_CEsat

collector-emitter

I_C= -0.5 A; I_B= -50 mA; pulsed;

-45

-90

-225

-230

56

-65

-130

-320

-325

80

mV

mΩ

saturation voltage

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_C= -1 A; I_B= -50 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-

I_C= -4 A; I_B= -400 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-

I_C= -4.1 A; I_B= -410 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-

R_CEsat

collector-emitter

I_C= -4 A; I_B= -400 mA; pulsed;

-

saturation resistance

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

PBSS306PZ

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Product data sheet

Rev. 3 — 26 July 2011

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

Table 7.

Symbol

V_BEsat

Characteristics …continued

Parameter

base-emitter saturation I_C= -1 A; I_B= -100 mA; pulsed;

Conditions

Min

Typ

Max

Unit

-

-0.81 -0.9

-0.93 -1.05

-0.78 -0.85

V

voltage

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

I_C= -4 A; I_B= -400 mA; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

-

V

V_BEon

base-emitter turn-on

voltage

V_CE= -2 V; I_C= -2 A; pulsed;

t_p≤ 300 µs; δ ≤ 0.02 ; T_amb= 25 °C

t_d

t_r

delay time

V_CC= -12.5 V; I_C= -3 A; I_Bon= -0.15 A;

I_Boff= 0.15 A; T_amb= 25 °C

-

15

-

ns

rise time

185

200

150

175

325

100

ns

t_on

t_s

turn-on time

storage time

fall time

ns

t_f

ns

t_off

f_T

turn-off time

transition frequency

ns

V_CE= -10 V; I_C= -100 mA;

f = 100 MHz; T_amb= 25 °C

MHz

C_c

collector capacitance

V_CB= -10 V; I_E= 0 A; i_e= 0 A;

f = 1 MHz; T_amb= 25 °C

-

50

80

pF

006aaa645

006aaa651

600

−14

I

C

(A)

−12

h

FE

(1)

(2)

I

(mA) = −1015

B

−10

−8

−6

−4

−2

0

−870

−725

400

−580

−435

−290

−145

200

(3)

0

−10

−1

2

3

4

−1

−10

(mA)

0

−1

−2

−3

−4

−5

(V)

I

V

CE

C

V_CE= -2 V

T

_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

Fig 5. DC current gain as a function of collector

current; typical values

Fig 6. Collector current as a function of

collector-emitter voltage; typical values

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

006aaa646

006aaa649

−1.2

V

(V)

V

BEsat

(V)

BE

−0.8

−0.4

0

(1)

(2)

(3)

−0.4

(3)

0

−10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−10

−1

−10

I (mA)

C

I

C

V_CE= -2 V

I_C/I_B= 20

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= −55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

Fig 7. Base-emitter voltage as a function of collector

current; typical values

Fig 8. Base-emitter saturation voltage as a function of

collector current; typical values

006aaa647

006aaa648

−10

V

CEsat

(V)

CEsat

(V)

−1

−10

(1)

(2)

(1)

(2)

(3)

−2

−10

−2

−10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−1

−10

I (mA)

C

I

C

I_C/I_B= 20

T

_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 10. Collector-emitter saturation voltage as a

function of collector current; typical values

PBSS306PZ

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©

Product data sheet

Rev. 3 — 26 July 2011

7 of 15

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

006aaa650

006aaa652

3

10

R

CEsat

R

CEsat

(Ω)

2

10

(1)

(2)

(3)

1

(1)

(2)

(3)

−1

10

−2

−10

−2

−10

10

−1

2

3

4

−1

2

3

4

−1

−10

(mA)

−1

−10

I (mA)

C

I

C

I_C/I_B= 20

T

_amb= 25 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= −55 °C

(1) I_C/I_B= 100

(2) I_C/I_B= 50

(3) I_C/I_B= 10

Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

PBSS306PZ

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

8. Test information

−

I

B

input pulse

90 %

(idealized waveform)

−

I

(100 %)

Bon

10 %

−

I

Boff

output pulse

−

(idealized waveform)

I

C

90 %

−

I

(100 %)

C

10 %

t

f

t

r

s

d

006aaa266

t

off

on

Fig 13. BISS transistor switching time definition

V

CC

BB

R

B

R

C

V

o

(probe)

oscilloscope

450 Ω

oscilloscope

450 Ω

R2

V

DUT

I

R1

mgd624

V_CC= -12.5 V; I_C= -3 A; I_Bon= -0.15 A; I_Boff= 0.15 A

Fig 14. Test circuit for switching times

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors and is

suitable for use in automotive applications.

PBSS306PZ

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

9. Package outline

Plastic surface-mounted package with increased heatsink; 4 leads

SOT223

D

B

E

A

X

c

y

H

v

M

A

E

b

1

4

Q

A

1

L

1

2

3

p

e

b

p

w

M

B

detail X

1

e

0

2

4 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

A

b

c

D

E

e

H

L

p

Q

v

w

y

p

1

E

1.8

1.5

0.10 0.80

0.01 0.60

3.1

2.9

0.32

0.22

6.7

6.3

3.7

3.3

7.3

6.7

1.1

0.7

0.95

0.85

mm

4.6

2.3

0.2

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

04-11-10

06-03-16

SOT223

SC-73

Fig 15. Package outline SOT223 (SC-73)

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

10. Soldering

7

3.85

3.6

3.5

0.3

1.3 1.2

(4×) (4×)

solder lands

solder resist

4

6.1

3.9

7.65

solder paste

occupied area

1

2

3

Dimensions in mm

2.3

1.2

(3×)

1.3

(3×)

6.15

sot223_fr

Fig 16. Reflow soldering footprint for SOT223 (SC-73)

8.9

6.7

1.9

solder lands

4

solder resist

6.2

8.7

occupied area

Dimensions in mm

1

2

3

preferred transport

direction during soldering

1.9

(3×)

2.7

1.9

(2×)

1.1

sot223_fw

Fig 17. Wave soldering footprint for SOT223 (SC-73)

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

11. Revision history

Table 8.

Revision history

Document ID

PBSS306PZ v.3

Modifications:

Release date

Data sheet status

Change notice

Supersedes

20110726

Product data sheet

-

PBSS306PZ v.2

•

1.2 “Features and benefits” updated

• In 7 “Characteristics” new parameter added, I_CES

•

Fig 15. updated

12 “Legal information” updated

PBSS306PZ v.2

PBSS306PZ v.1

20091211

20060920

Product data sheet

-

PBSS306PZ v.1

-

PBSS306PZ

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Product data sheet

Rev. 3 — 26 July 2011

12 of 15

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

12. Legal information

12.1 Data sheet status

Document status ^{[1] [2]}

Product status ^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term 'short data sheet' is explained in section "Definitions".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nexperia.com.

Suitability for use — Nexperia products are not designed,

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia accepts no liability for inclusion and/or use of

Nexperia products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the Nexperia

product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications and

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

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Product data sheet

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100 V, 4.1 A PNP low VCEsat (BISS) transistor

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior

authorization from national authorities.

13. Contact information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

PBSS306PZ

All information provided in this document is subject to legal disclaimers.

©

Product data sheet

Rev. 3 — 26 July 2011

14 of 15

PBSS306PZ

Nexperia

100 V, 4.1 A PNP low VCEsat (BISS) transistor

14. Contents

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . .1

Features and benefits. . . . . . . . . . . . . . . . . . . . .1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2

Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

Ordering information. . . . . . . . . . . . . . . . . . . . . .2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

Thermal characteristics . . . . . . . . . . . . . . . . . . .3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12

3

4

5

6

7

9

10

11

12

Legal information. . . . . . . . . . . . . . . . . . . . . . . .13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14

12.1

12.2

12.3

12.4

13

Contact information. . . . . . . . . . . . . . . . . . . . . .14

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 26 July 2011


型号：	PBSS306PZ
厂家：	Nexperia
描述：	100 V, 4.1 A PNP low VCEsat (BISS) transistorProduction 开关光电二极管晶体管
文件：	总15页 (文件大小：910K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PBSS306PZ [NEXPERIA]

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