PBSS4160X [NEXPERIA]
60 V, 1 A NPN low VCEsat BISS transistorProduction;
| 型号： | PBSS4160X |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 1 A NPN low VCEsat BISS transistorProduction |
| 文件： | 总12页 (文件大小：215K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
23 May 2017
Product data sheet
1. General description
NPN low VCEsat Breakthrough in Smal Signal (BISS) transitor in a medium power SOT89 (SC-62)
flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat
•
•
•
High collector current capability IC and ICM
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
DC-to-DC conversion
Supply line switches
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
60
V
IC
collector current
-
-
-
-
1
A
A
ICM
hFE
peak collector current single pulse; tp ≤ 1 ms
DC current gain VCE = 10 V; IC = 500 mA; Tamb = 25 °C [1]
-
2
170
360
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
E
C
B
emitter
collector
base
C
2
B
3
3
2
1
E
SOT89
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4160X
SOT89
plastic, surface-mounted package; 3 leads; 1.5 mm pitch; 4.5
mm x 2.5 mm x 1.5 mm body
SOT89
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS4160X
S41
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
2 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
60
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
60
V
emitter-base voltage
collector current
open collector
-
7
V
-
1
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
2
A
IB
-
300
1
mA
A
IBM
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
Ptot
[1]
[2]
[3]
-
500
950
1.35
150
150
150
mW
mW
W
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated; mounting pad for collector 6 cm2.
aaa-026758
1.5
(1)
P
tot
(W)
1.2
(2)
(3)
0.9
0.6
0.3
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, single-sided copper, 6 cm2
(2) FR4 PCB, single-sided copper, 1 cm2
(3) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
©
PBSS4160X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
3 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
250
132
93
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
[3]
-
-
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 6 cm2.
aaa-026759
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
2
10
0.20
0.10
0.05
10
0.02
0.01
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026760
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
4 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026761
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.50
0.33
0.20
10
0.10
0.05
0.02
0
0.01
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4160X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
5 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
10
Unit
nA
ICBO
collector-base cut-off
current
VCB = 48 V; IE = 0 A; Tamb = 25 °C
VCB = 48 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
100
nA
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
DC current gain
VCE = 10 V; IC = 500 mA; Tamb = 25 °C [1]
170
50
-
-
-
-
360
-
VCE = 5 V; IC = 1 A; Tamb = 25 °C
[1]
VCEsat
RCEsat
VBEsat
collector-emitter
saturation voltage
IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]
200
mV
Ω
collector-emitter
saturation resistance
-
-
-
-
0.4
1.2
base-emitter saturation
voltage
[1]
V
VBE
fT
base-emitter voltage
transition frequency
VCE = 5 V; IC = 1 A; Tamb = 25 °C
[1]
-
-
-
1
-
V
VCE = 10 V; IC = 50 mA; f = 100 MHz;
Tamb = 25 °C
180
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
6
-
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
400
aaa-026762
aaa-026763
2.0
45
35
I
C
h
I
B
(mA) = 50
40
30
FE
(A)
(1)
(2)
(3)
1.6
25
20
300
200
100
15
1.2
0.8
0.4
0
10
5
0
10
-1
2
3
4
1
10
10
10
10
(mA)
0
2
4
6
8
10
I
V
(V)
CE
C
Tamb = 25 °C
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. Collector current as a function of collector-
emitter voltage; typical values
Fig. 5. DC current gain as a function of collector
current; typical values
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
6 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026764
aaa-026765
1.2
1.2
V
BE
(V)
V
BEsat
(V)
0.9
(1)
(2)
(3)
(1)
(2)
(3)
0.8
0.4
0
0.6
0.3
0
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
VCE = 5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7. Base-emitter voltage as a function of collector Fig. 8. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
aaa-026766
aaa-026767
3
10
10
R
CEsat
(Ω)
V
CEsat
(V)
2
10
1
10
-1
10
(1)
(1)
(2)
(3)
1
(3)
2
(2)
3
-1
-2
10
10
-1
2
3
4
-1
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
I
I
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS4160X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
7 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
aaa-026768
aaa-026769
3
20
10
C
C
(pF)
16
f
T
(MHz)
12
8
2
10
4
0
10
2
0
10
20
30
40
V
50
1
10
10
(V)
I (mA)
C
CB
f = 1 MHz
Tamb = 25 °C
VCE = 10 V
f = 100 MHz
Tamb = 25 °C
Fig. 11. Collector capacitance as a function of
collector-base voltage; typical values
Fig. 12. Transition frequency as a function of collector
current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
1.5
0.48
0.35
0.44
0.23
3
Dimensions in mm
06-08-29
Fig. 13. Package outline SOT89
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
8 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
13. Soldering
4.75
2.25
2
1.9
1.2
0.2
solder lands
solder resist
0.85
1.7
1.2
4.6
4.85
solder paste
occupied area
0.5
1
1.1
(3×)
(2×)
Dimensions in mm
1.5
1.5
0.6
(3×)
0.7
(3×)
3.95
sot089_fr
Fig. 14. Reflow soldering footprint for SOT89
6.6
2.4
3.5
solder lands
solder resist
7.6
0.5
occupied area
1.8
Dimensions in mm
(2×)
preferred transport direction during soldering
1.9
1.9
1.5
(2×)
0.7
5.3
sot089_fw
Fig. 15. Wave soldering footprint for SOT89
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
9 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20170523
Data sheet status
Change notice
Supersedes
PBSS4160X v.1
Product data sheet
-
-
©
PBSS4160X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
10 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
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Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
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beyond those described in the Product data sheet.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
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or construed as an offer to sell products that is open for acceptance or the
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Limited warranty and liability — Information in this document is believed
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Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’ aggregate and cumulative liability towards customer
©
PBSS4160X
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
11 / 12
Nexperia
PBSS4160X
60 V, 1 A NPN low VCEsat BISS transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................6
11. Test information......................................................... 8
12. Package outline.......................................................... 8
13. Soldering..................................................................... 9
14. Revision history........................................................10
15. Legal information..................................................... 11
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 23 May 2017
©
PBSS4160X
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Nexperia B.V. 2017. All rights reserved
Product data sheet
23 May 2017
12 / 12
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