PBSS4240Y [NEXPERIA]

40 V low VCEsat NPN transistorProduction;
PBSS4240Y
型号: PBSS4240Y
厂家: Nexperia    Nexperia
描述:

40 V low VCEsat NPN transistorProduction

PC 开关 光电二极管 晶体管
文件: 总8页 (文件大小:455K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
DISCRETE SEMICONDUCTORS  
DATA SHEET  
age  
PBSS4240Y  
40 V low VCEsat NPN transistor  
Product data sheet  
2001 Jul 13  
NXP Semiconductors  
Product data sheet  
40 V low VCEsat NPN transistor  
PBSS4240Y  
FEATURES  
QUICK REFERENCE DATA  
Low collector-emitter saturation voltage  
High current capability  
SYMBOL  
VCEO  
PARAMETER  
MAX. UNIT  
collector-emitter voltage  
peak collector current  
equivalent on-resistance  
40  
V
Improved device reliability due to reduced heat  
generation  
ICM  
3
A
RCEsat  
<200  
mΩ  
Replacement for SOT89/SOT223 standard packaged  
transistors due to enhanced performance.  
PINNING  
PIN  
DESCRIPTION  
APPLICATIONS  
1
2
3
4
5
6
collector  
Supply line switching circuits  
Battery management applications  
DC/DC converter applications  
Strobe flash units  
collector  
base  
emitter  
collector  
collector  
Heavy duty battery powered equipment (motor and lamp  
drivers).  
DESCRIPTION  
6
5
4
handbook, halfpage  
NPN low VCEsat transistor in a SOT363 (SC-88) plastic  
package.  
1, 2, 5, 6  
PNP complement: PBSS5240Y.  
3
4
MARKING  
1
2
3
TYPE NUMBER  
PBSS4240Y  
MARKING CODE(1)  
Top view  
MAM441  
42*  
Note  
Fig.1 Simplified outline (SOT363; SC-88) and  
symbol.  
1. * = p: made in Hongkong.  
* = t: made in Malaysia.  
2001 Jul 13  
2
NXP Semiconductors  
Product data sheet  
40 V low VCEsat NPN transistor  
PBSS4240Y  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
40  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
A
A
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
open base  
40  
open collector  
5
2
ICM  
3
IBM  
300  
270  
430  
+150  
150  
+150  
mA  
mW  
mW  
°C  
Ptot  
total power dissipation  
Tamb 25 °C; note 1  
Tamb 25 °C; note 2  
Tstg  
Tj  
storage temperature  
65  
junction temperature  
°C  
Tamb  
operating ambient temperature  
65  
°C  
Notes  
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.  
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
in free air; note 1  
in free air; note 2  
VALUE  
463  
UNIT  
K/W  
K/W  
Rth j-a  
thermal resistance from junction to  
ambient  
291  
Notes  
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint.  
2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2.  
2001 Jul 13  
3
NXP Semiconductors  
Product data sheet  
40 V low VCEsat NPN transistor  
PBSS4240Y  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 30 V; IE = 0  
MIN. TYP. MAX. UNIT  
ICBO  
collector-base cut-off current  
100  
50  
100  
nA  
μA  
nA  
VCB = 30 V; IE = 0; Tj = 150 °C  
VEB = 4 V; IC = 0  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
VCE = 2 V; IC = 100 mA  
VCE = 2 V; IC = 500 mA  
VCE = 2 V; IC = 1 A  
350  
300  
300  
150  
470  
450  
420  
250  
45  
VCE = 2 V; IC = 2 A  
VCEsat  
collector-emitter saturation  
voltage  
IC = 100 mA; IB = 1 mA  
IC = 500 mA; IB = 50 mA  
IC = 750 mA; IB = 15 mA  
IC = 1 A; IB = 50 mA  
70  
100  
180  
180  
320  
mV  
mV  
mV  
mV  
mV  
70  
120  
130  
240  
140  
IC = 2 A; IB = 200 mA  
IC = 500 mA; IB = 50 mA; note 1  
RCEsat  
VBEsat  
VBEon  
Cc  
equivalent on-resistance  
<200 mΩ  
base-emitter saturation voltage IC = 2 A; IB = 200 mA  
1.1  
0.75  
20  
V
base-emitter turn-on voltage  
collector capacitance  
transition frequency  
VCE = 2 V; IC = 100 mA  
V
VCB = 10 V; IE = Ie = 0; f = 1 MHz  
15  
pF  
MHz  
fT  
IC = 100 mA; VCE = 10 V; f = 100 MHz 100  
230  
Note  
1. Pulse test: tp 300 μs; δ ≤ 0.02.  
2001 Jul 13  
4
NXP Semiconductors  
Product data sheet  
40 V low VCEsat NPN transistor  
PBSS4240Y  
PACKAGE OUTLINE  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
L
p
w
M B  
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2001 Jul 13  
5
NXP Semiconductors  
Product data sheet  
40 V low VCEsat NPN transistor  
PBSS4240Y  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2001 Jul 13  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/01/pp7  
Date of release: 2001 Jul 13  
Document order number: 9397 750 08385  

相关型号:

PBSS4240Y,115

PBSS4240Y - 40 V low VCEsat NPN transistor TSSOP 6-Pin
NXP

PBSS4240YT/R

TRANSISTOR 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-88, 6 PIN, BIP General Purpose Small Signal
NXP

PBSS4240Z

40 V, 2 A NPN low VCEsat (BISS) transistorProduction
NEXPERIA

PBSS4250X

50 V, 2 A NPN low VCEsat (BISS) transistor
NXP

PBSS4250X

50 V, 2 A NPN low VCEsat transistorProduction
NEXPERIA

PBSS4250X,115

PBSS4250X - 50 V, 2 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin
NXP

PBSS4250X,135

PBSS4250X - 50 V, 2 A NPN low VCEsat (BISS) transistor SOT-89 3-Pin
NXP

PBSS4260PAN

60 V, 2 A NPN/NPN low VCEsat (BISS) transistor
NXP

PBSS4260PAN

60 V, 2 A NPN/NPN low VCEsat (BISS) transistorProduction
NEXPERIA

PBSS4260PANP

60 V, 2 A NPN/PNP low VCEsat (BISS) transistor
NXP

PBSS4260PANP

60 V, 2 A NPN/PNP low VCEsat (BISS) transistorProduction
NEXPERIA

PBSS4260PANPS

60 V, 2 A NPN/PNP low VCEsat (BISS) double transistorProduction
NEXPERIA