PBSS4320T [NEXPERIA]
20 V NPN low VCEsat transistorProduction;
| 型号： | PBSS4320T |
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Nexperia |
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4320T
20 V NPN low VCEsat transistor
Product data sheet
2004 Mar 18
Supersedes data of 2002 Aug 08
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
VCEO
IC
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
20
2
V
A
A
• High collector current capability
• High collector current gain
ICRP
repetitive peak collector
current
3
• Improved efficiency due to reduced heat generation.
RCEsat
equivalent on-resistance
105
mΩ
APPLICATIONS
PINNING
PIN
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
DESCRIPTION
1
2
3
base
• Battery chargers
emitter
collector
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
handbook, halfpage
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5320T.
3
3
2
1
MARKING
TYPE NUMBER
PBSS4320T
Note
MARKING CODE(1)
ZG*
1
2
Top view
MAM255
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NUMBER
NAME
VERSION
PBSS4320T
−
SOT23
2004 Mar 18
2
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
−
−
V
V
V
A
A
A
A
collector-emitter voltage
emitter-base voltage
open base
20
open collector
5
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
2
ICRP
ICM
note 1
3
single peak
5
IB
0.5
300
480
540
1.2
+150
150
+150
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
Tamb ≤ 25 °C; note 3
Tamb ≤ 25 °C; note 4
Tamb ≤ 25 °C; notes 1 and 2
mW
mW
mW
W
Tstg
Tj
storage temperature
−65
−
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
VALUE
417
UNIT
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from junction to
ambient
in free air; note 2
260
in free air; note 3
230
in free air; notes 1 and 4
104
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Mar 18
3
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector-base cut-off current IE = 0 A; VCB = 20 V
IE = 0 A; VCB = 20 V; Tj = 150 °C
IC = 0 A; VEB = 5 V
CONDITIONS
MIN.
TYP.
MAX.
100
UNIT
nA
ICBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
100
−
μA
IEBO
hFE
emitter-base cut-off current
DC current gain
nA
IC = 100 mA; VCE = 2 V
220
220
220
200
150
−
IC = 500 mA; VCE = 2 V
−
IC = 1 A; VCE = 2 V; note 1
IC = 2 A; VCE = 2 V; note 1
IC = 3 A; VCE = 2 V; note 1
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
−
−
−
VCEsat
collector-emitter saturation
voltage
70
120
230
210
310
105
1.1
1.2
−
mV
mV
mV
mV
mV
mΩ
V
−
IC = 2 A; IB = 40 mA; note 1
IC = 2 A; IB = 200 mA; note 1
IC = 3 A; IB = 300 mA; note 1
IC = 2 A; IB = 200 mA; note 1
IC = 2 A; IB = 40 mA; note 1
IC = 3 A; IB = 300 mA; note 1
−
−
−
RCEsat
VBEsat
equivalent on-resistance
−
80
−
base-emitter saturation
voltage
−
−
−
V
VBEon
fT
base-emitter turn-on voltage IC = 1 A; VCE = 2 V; note 1
1.2
100
−
V
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
−
−
MHz
Cc
collector capacitance
IE = Ie = 0 A; VCB = 10 V; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Mar 18
4
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD849
MLD850
800
1200
handbook, halfpage
handbook, halfpage
h
V
FE
BE
(mV)
600
(1)
(2)
800
(1)
400
(2)
(3)
400
(3)
200
0
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
VCE = 2 V.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD851
MLD852
1400
1400
handbook, halfpage
handbook, halfpage
V
V
BEsat
BEsat
(mV)
(mV)
1000
1000
(1)
(1)
(2)
(2)
(3)
(3)
600
600
200
10
200
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
IC/IB = 10.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) amb = 25 °C.
(3) Tamb = 150 °C.
T
T
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
5
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD853
MLD854
3
3
10
10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(1)
(2)
(mV)
(mV)
2
2
10
10
(3)
(1)
(2)
10
10
(3)
1
10
1
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
IC/IB = 10.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD855
MLD856
3
3
10
10
handbook, halfpage
handbook, halfpage
V
V
CEsat
CEsat
(mV)
(mV)
2
2
10
10
(1)
(3)
(2)
(1)
(3)
(2)
10
10
1
10
1
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
1
10
10
10
10
(mA)
(mA)
C
C
IC/IB = 50.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
T
T
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
6
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
MLD857
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
(1)
(2)
−1
10
(3)
−2
10
−1
2
3
I
4
10
1
10
10
10
10
(mΑ)
C
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Mar 18
7
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
2004 Mar 18
8
NXP Semiconductors
Product data sheet
20 V NPN low VCEsat transistor
PBSS4320T
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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reserves the right to make changes to information
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 18
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Mar 18
Document order number: 9397 750 12436
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