PBSS4350D [NEXPERIA]
50 V low VCEsat NPN transistorProduction;
| 型号： | PBSS4350D |
| 厂家： | 
Nexperia |
| 描述： | 50 V low VCEsat NPN transistorProduction PC 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
age
PBSS4350D
50 V low VCEsat NPN transistor
Product data sheet
2001 Jul 13
Supersedes data of 2001 Jan 26
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capability
SYMBOL
VCEO
PARAMETER
MAX. UNIT
collector-emitter voltage
peak collector current
equivalent on-resistance
50
V
• Improved device reliability due to reduced heat
generation
ICM
5
A
RCEsat
<145
mΩ
• Replacement for SOT89/SOT223 standard packaged
transistors due to enhanced performance.
PINNING
PIN
DESCRIPTION
APPLICATIONS
1
2
3
4
5
6
collector
collector
base
• Supply line switching circuits
• Battery management applications
• DC/DC convertor applications
• Strobe flash units
emitter
collector
collector
• Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
handbook, halfpage
6
5
2
4
3
1, 2, 5, 6
NPN low VCEsat transistor in a SOT457 (SC-74) plastic
package. PNP complement: PBSS5350D.
3
MARKING
4
1
TYPE NUMBER
PBSS4350D
MARKING CODE
Top view
MAM436
43
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
2001 Jul 13
2
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
60
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
V
V
A
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
50
open collector
6
3
ICM
5
IBM
1
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
Tamb ≤ 25 °C; note 2
600
750
+150
150
+150
mW
mW
°C
Tstg
Tj
storage temperature
−65
−
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
208
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to
ambient
160
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 6 cm2.
2001 Jul 13
3
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 50 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
nA
μA
nA
VCB = 50 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
100
−
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A; note 1
VCE = 2 V; IC = 2 A; note 1
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 50 mA
200
200
100
−
−
−
−
−
−
VCEsat
collector -emitter saturation
voltage
−
90
mV
mV
mV
mΩ
V
−
−
170
290
<145
1.2
1.1
−
IC = 2 A; IB = 200 mA; note 1
IC = 2 A; IB = 200 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
−
110
−
base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1
−
base-emitter turn-on voltage
transition frequency
VCE = 2 V; IC = 1 A; note 1
−
−
V
IC = 100 mA; VCE = 5 V; f = 100 MHz 100
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
MHz
pF
Cc
collector capacitance
−
−
30
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Jul 13
4
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
MGW176
MGW175
1.2
600
handbook, halfpage
handbook, halfpage
V
BE
(V)
h
FE
1.0
500
(1)
(1)
(2)
0.8
0.6
0.4
0.2
0
400
(2)
300
(3)
200
(3)
100
0
−1
2
3
I
4
−1
2
3
I
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
(mA)
C
C
VCE = 2 V.
(1)
Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
(2) Tamb = 25 C.
(3) Tamb = 150 °C.
T
Fig.3 Base-emitter voltage as a function of
collector-current; typical values.
Fig.2 DC current gain; typical values.
MGW178
MGW181
3
1.2
10
handbook, halfpage
handbook, halfpage
V
BEsat
(V)
V
CEsat
1.0
(mV)
(1)
2
0.8
10
(2)
(1)
(3)
0.6
(2)
(3)
0.4
10
0.2
1
10
0
10
−1
2
3
I
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.4 Collector-emitter saturation as a function of
collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Jul 13
5
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
MGW180
(2)
MGW179
1200
5
handbook, halfpage
(1)
handbook, halfpage
I
(3)
(4)
(5)
C
I
C
(mA)
(1)
(A)
1000
(2)
(3)
(6)
(7)
4
(8)
(9)
(4)
(5)
(6)
(7)
(8)
800
600
400
200
0
3
2
(10)
(9)
(10)
(11)
(12)
1
0
0
0
0.4
0.8
1.2
1.6
2
0.4
0.8
1.2
1.6
2
V
(V)
V
(V)
CE
CE
V
CE = 5 V.
VCE = 5 V.
(5)
(6) IB = 2.31 nA.
(7) B = 1.98 nA.
(8) IB = 1.65 nA.
IB = 2.64 nA.
(9) IB = 1.32 nA.
(10) IB = 0.99 nA.
(11) IB = 0.66 nA.
(12) IB = 0.33 nA.
(1) IB = 3.96 nA.
(2) B = 3.63 nA.
(3) IB = 3.30 nA.
(4) IB = 2.97 mA.
(1)
(2)
I
B = 150 mA.
B = 135 mA.
(5) IB = 90 mA.
(6) IB = 75 mA.
(7) IB = 60 mA.
(8) IB = 45 mA.
(9) IB = 30 mA.
(10) IB = 15 mA.
I
I
I
(3) IB = 120 mA.
(4) IB = 105 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
MGW182
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
(1)
(2)
−1
−2
(3)
10
10
−1
2
3
I
4
10
1
10
10
10
10
(mA)
C
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Jul 13
6
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
01-05-04
SOT457
SC-74
2001 Jul 13
7
NXP Semiconductors
Product data sheet
50 V low VCEsat NPN transistor
PBSS4350D
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Jul 13
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp9
Date of release: 2001 Jul 13
Document order number: 9397 750 08426
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