PBSS4360PAS-Q [NEXPERIA]
60 V, 3 A NPN low VCEsat transistorProduction;
| 型号： | PBSS4360PAS-Q |
| 厂家： | 
Nexperia |
| 描述： | 60 V, 3 A NPN low VCEsat transistorProduction |
| 文件： | 总15页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
17 March 2022
Product data sheet
1. General description
NPN low VCEsat transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible and
soldarable side pads.
PNP complement: PBSS5360PAS-Q
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat
•
•
•
•
•
•
•
•
•
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
High temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) area requirements
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with soldarable side pads
Suitable for Automatic Optical Inspection (AOI) of solder joint
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
60
V
IC
collector current
-
-
-
-
3
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
6
A
RCEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
73
108
mΩ
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
E
C
3
2
emitter
C
3
collector
B
1
2
E
sym021
Transparent top view
DFN2020D-3 (SOT1061D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS4360PAS-Q
DFN2020D-3 plastic, leadless thermal enhanced ultra thin small outline SOT1061D
package with side-wettable flanks (SWF); no leads; 3
terminals; 1.3 mm pitch; 2 mm x 2 mm x 0.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
E9
PBSS4360PAS-Q
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
2 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
80
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
60
V
emitter-base voltage
collector current
open collector
-
7
V
-
3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
-
6
A
IB
-
500
1
mA
A
IBM
peak base current
total power dissipation
-
Ptot
Tamb ≤ 25 °C
[1]
-
0.6
1.2
1.5
2.5
175
175
175
W
W
W
W
°C
°C
°C
[2] [3]
[4]
-
-
[5] [6]
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
aaa-013298
3
(1) + (2)
P
tot
(W)
2
1
0
(3)
(4) + (5)
(6)
-75
25
125
225
T
(°C)
amb
(1) Ceramic PCB, single-sided copper, standard footprint
(2) FR4 PCB, 4-layer copper, 1 cm2
(3) FR4 PCB, single-sided copper, 6 cm2
(4) FR4 PCB, single-sided copper, 1 cm2
(5) FR4 PCB, 4-layer copper, standard footprint
(6) FR4 PCB, single-sided copper, standard footprint
Fig. 1. Power derating curves
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
3 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
250
125
100
60
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
-
-
-
-
-
-
[2] [3]
[4]
[5] [6]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Device mounted on a FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm2.
006aab979
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.5
0.33
2
10
0.2
0.1
0.05
10
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab980
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
4 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
006aac000
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
10
0.1
0.05
1
0.02
0
0.01
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013299
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013300
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.50
0.20
0.33
10
0.10
0.02
0.05
0.01
0
1
-1
10
-5
-4
10
-3
-2
-1
10
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
5 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
006aab982
2
10
duty cycle = 1
Z
0.75
0.5
th(j-a)
(K/W)
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
- 1
10
- 5
- 4
- 3
- 2
- 1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
6 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 64 V; IE = 0 A; Tamb = 25 °C
VCB = 64 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 48 V; VBE = 0 V; Tamb = 25 °C
current
100
nA
emitter-base cut-off
current
VEB = 5.6 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
DC current gain
VCE = 5 V; IC = 0.05 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
200
200
200
125
75
-
380
360
330
220
140
45
-
VCE = 5 V; IC = 0.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
-
VCE = 5 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
-
VCE = 5 V; IC = 3 A; tp ≤ 300 µs; δ ≤
0.02; Tamb = 25 °C
-
VCEsat
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
60
110
210
mV
mV
mV
IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
80
IC = 2 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
150
IC = 3 A; IB = 300 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
220
73
325
108
mV
mΩ
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
base-emitter saturation IC = 2 A; IB = 100 mA; pulsed; tp ≤
-
-
0.9
1.1
V
V
voltage
300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
0.75
0.95
td
tr
delay time
IC = 2 A; IBon = 0.1 A; IBoff = -0.1 A;
Tamb = 25 °C
-
11
-
-
-
-
-
-
-
ns
rise time
-
130
141
200
110
310
160
ns
ton
ts
turn-on time
storage time
fall time
-
ns
-
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
ns
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
75
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
11
14
pF
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
7 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
aaa-019922
aaa-019923
3.0
600
I
= 27 mA
21.6 mA
16.2 mA
B
24.3 mA
18.9 mA
I
(1)
(2)
C
(A)
h
FE
2.4
13.5 mA
8.1 mA
400
200
0
1.8
1.2
0.6
0
10.8 mA
5.4 mA
(3)
2.7 mA
-1
2
3
4
0
0.5
1.0
1.5
2.0
10
1
10
10
10
10
(mA)
V
(V)
I
C
CE
Tamb = 25 °C
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9. Collector current as a function of collector-
emitter voltage; typical values
Fig. 8. DC current gain as a function of collector
current; typical values
aaa-019924
aaa-019925
1.2
1.2
V
BEsat
(V)
V
BE
(V)
(1)
0.9
(1)
(2)
(3)
0.8
(2)
(3)
0.6
0.3
0
0.4
0
-1
10
2
3
4
-1
-10
2
3
4
1
10
10
10
10
(mA)
-1
-10
-10
-10
-10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 10. Base-emitter voltage as a function of collector Fig. 11. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
8 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
aaa-019926
aaa-019927
1
1
V
CEsat
(V)
V
CEsat
(V)
-1
-2
-3
10
(1)
(2)
-1
10
(1)
10
10
(3)
(2)
(3)
-2
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-019928
aaa-019929
3
2
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
1
10
(1)
(2)
(3)
(1)
(2)
(3)
1
-1
10
-1
10
10
-2
-2
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
9 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 16. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 17. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
10 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
12. Package outline
0.65
max
1.3
0.45
0.35
0.35
0.25
0.04
max
1
2
2.1
1.9
1.1
0.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
14-03-18
Fig. 18. Package outline DFN2020D-3 (SOT1061D)
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
11 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
13. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.3 (2x)
0.5 (2x)
0.5 (2x) 0.6 (2x) 0.7 (2x)
0.25
1.1
0.35
0.3
0.25
2.5 2.3
0.25
1
1.1 1.2
0.35
0.35
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
14-03-05
14-03-12
Issue date
sot1061d_fr
Fig. 19. Reflow soldering footprint for DFN2020D-3 (SOT1061D)
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
12 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20220317
Data sheet status
Change notice
Supersedes
PBSS4360PAS-Q v.1
Product data sheet
-
-
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
13 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale — Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
published at http://www.nexperia.com/profile/terms, unless otherwise agreed
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
14 / 15
Nexperia
PBSS4360PAS-Q
60 V, 3 A NPN low VCEsat transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................7
11. Test information........................................................10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2022. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 March 2022
©
PBSS4360PAS-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
17 March 2022
15 / 15
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 202
-
VISHAY
©2020 ICPDF网 联系我们和版权申明