PBSS4540Z [NEXPERIA]
40 V low VCEsat NPN transistorProduction;
| 型号： | PBSS4540Z |
| 厂家： | 
Nexperia |
| 描述： | 40 V low VCEsat NPN transistorProduction |
| 文件： | 总10页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
age
PBSS4540Z
40 V low VCEsat NPN transistor
Product data sheet
2001 Nov 14
Supersedes data of 2001 Jul 24
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage
• High current capabilities
SYMBOL
VCEO
IC
PARAMETER
MAX UNIT
emitter-collector voltage
collector current (DC)
peak collector current
equivalent on-resistance
40
5
V
• Improved device reliability due to reduced heat
generation.
A
ICM
10
<71
A
RCEsat
mΩ
APPLICATIONS
PINNING
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
PIN
1
DESCRIPTION
base
2
collector
emitter
collector
• Heavy duty battery powered equipment (motor and lamp
drivers)
3
4
• MOSFET driver applications.
DESCRIPTION
4
handbook, halfpage
NPN low VCEsat transistor in a SOT223 plastic package.
PNP complement: PBSS5540Z.
2, 4
1
MARKING
3
TYPE NUMBER
PBSS4540Z
MARKING CODE
1
2
3
Top view
MAM287
PB4540
Fig.1 Simplified outline (SOT223) and symbol.
2001 Nov 14
2
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
40
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
40
V
open collector
6
V
5
A
ICM
10
A
IBM
2
A
Ptot
total power dissipation
Tamb ≤ 25 °C; notes 1 and 3
Tamb ≤ 25 °C; notes 2 and 3
1.35
2
W
W
Tstg
Tj
storage temperature
−65
−
+150
150
+150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
3. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
note 1
note 2
92
K/W
K/W
62.5
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
2001 Nov 14
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 30 V; IE = 0
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
−
−
100
50
100
−
nA
μA
nA
VCB = 30 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
−
VCE = 2 V; IC = 500 mA
VCE = 2 V; IC = 1 A; note 1
VCE = 2 V; IC = 2 A; note 1
VCE = 2 V; IC = 5 A; note 1
IC = 500 mA; IB = 5 mA
IC = 1 A; IB = 10 mA
300
300
250
100
−
500
500
450
300
50
−
−
−
VCEsat
collector-emitter saturation voltage
90
120
150
355
71
1.3
1.1
−
mV
mV
mV
mV
mΩ
V
−
75
IC = 2 A; IB = 200 mA
IC = 5 A; IB = 500 mA
IC = 5 A; IB = 500 mA; note 1
IC = 5 A; IB = 500 mA
VCE = 2 V; IC =2 A
−
90
−
210
42
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
−
−
1.1
0.8
130
−
V
IC = 100 mA; VCE = 10 V;
f = 100 MHz
70
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
−
60
75
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2001 Nov 14
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
MLD683
MLD684
1200
BE
1000
handbook, halfpage
handbook, halfpage
V
h
(mV)
FE
1000
800
(1)
800
600
400
(1)
(2)
600
(2)
400
(3)
(3)
200
0
200
0
−1
2
3
I
4
2
3
4
10
1
10
10
10
10
(mA)
1
10
10
10
10
I
(mA)
C
C
VCE = 2 V.
VCE = 2 V.
(1)
Tamb = 150 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
MLD685
MHC107
4
3
10
10
handbook, halfpage
handbook, halfpage
V
CEsat
V
(mV)
CEsat
(mV)
3
10
2
10
2
10
(1)
(1)
10
(2)
(2)
(3)
10
(3)
1
10
1
10
−1
2
3
4
−1
2
3
I
4
1
10
10
10
10
(mA)
1
10
10
10
10
(mA)
I
C
C
IC/IB = 20.
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
(3) IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −55 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 14
5
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
MHC106
MLD686
12
1300
BEsat
handbook, halfpage
I
V
C
(A)
(V)
10
1100
(1)
(2)
(4)
(3)
(5)
8
6
900
(6)
(8)
(1)
(7)
(9)
700
(2)
4
2
500
(10)
(3)
300
0
0
100
10
−1
2
3
I
4
400
800
1200
1600
V
2000
(mV)
1
10
10
10
10
(mA)
C
CE
IC/IB = 20.
(1) amb = −55 °C.
(1) IB = 70 mA.
(5) IB = 42 mA.
(6) B = 35 mA.
(9) IB = 14 mA.
(10) IB = 7 mA.
T
(2)
IB = 63 mA.
I
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
(3) IB = 56 mA.
(4) IB = 49 mA.
(7) IB = 28 mA.
(8) IB = 21 mA.
Fig.6 Base-emitter saturation voltage as a
Fig.7 Collector current as a function of
collector-emitter voltage; typical values.
function of collector current; typical values.
MHC076
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
(1)
−1
10
(2)
(3)
−2
10
10
−1
2
3
4
1
10
10
10
10
C (mA)
I
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Nov 14
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
99-09-13
SOT223
SC-73
2001 Nov 14
7
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4540Z
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Nov 14
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp9
Date of release: 2001 Nov 14
Document order number: 9397 750 08736
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