PBSS5350TH [NEXPERIA]
50 V, 3 A PNP low VCEsat (BISS) transistorProduction;
| 型号： | PBSS5350TH |
| 厂家： | 
Nexperia |
| 描述： | 50 V, 3 A PNP low VCEsat (BISS) transistorProduction |
| 文件： | 总14页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
21 June 2017
Product data sheet
1. General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
Low collector-emitter saturation voltage VCEsat
•
•
•
•
•
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
Higher efficiency leading to less heat genereation
High temperature applications up to 175 °C
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
Power management
DC-to-DC conversion
Supply line switches
Battery charger switches
Peripheral drivers
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-50
V
IC
collector current
-
-
-
-
-
-
-
-
-2
A
ICM
peak collector current pulsed
single pulse; tp < 1 ms
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1]
[2]
-3
A
-5
A
RCEsat
collector-emitter
135
mΩ
saturation resistance
[1] Pulse conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
3
B
E
C
base
C
2
emitter
collector
B
3
E
sym132
1
2
TO-236AB (SOT23)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS5350TH
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PBSS5350TH
FJ%
[1] % = placeholder for manufacturing site code
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
2 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
-50
-50
-7
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
-2
A
ICM
peak collector current
pulsed
[1]
-
-3
A
single pulse; tp < 1 ms
-
-5
A
IB
base current
-
-500
360
575
600
700
1.44
175
175
175
mA
mW
mW
mW
mW
W
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
[3]
-
[4]
-
[5]
-
[1] [2]
-
Tj
junction temperature
ambient temperature
storage temperature
-
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Pulse conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
aaa-026656
800
(1)
P
tot
(mw)
(2)
(3)
600
400
200
0
(4)
-75
25
125
225
T
(°C)
amb
(1) FR4 PCB, 4-layer copper, 1 cm2
(2) FR4 PCB, 4-layer copper, standard footprint
(3) FR4 PCB, single sided copper, 1 cm2
(4) FR4 PCB, single sided copper, standard footprint
Fig. 1. Power derating curves for SOT23
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
3 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-026790
-10
I
C
t
= 10 µs
p
(A)
-1
-1
t
= 100 µs
= 1 ms
p
t
p
p
t
= 10 ms
-10
-10
-10
t
t
= 100 ms
= 1 s
p
p
DC; FR4 PCB, 4-layer copper, collector
mounting pad 1 cm
2
-2
DC
-3
-1
-10
2
3
-1
-10
-10
-10
V
(V)
CE
Unless otherwise specified: Tamb = 25 °C; single pulse;
FR4 PCB, single-sided copper, standard footprint
Fig. 2. Safe operating area; junction to ambient; continuous and peak drain currents as a function of collector-
emitter voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
417
261
250
215
104
-
Unit
K/W
K/W
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
-
-
-
-
-
[2]
-
[3]
-
[4]
-
[1] [5]
-
Rth(j-sp)
thermal resistance
from junction to solder
point
75
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
[5] Operated under pulse conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
4 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-026658
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.33
0.50
0.20
2
10
0.10
0.02
0.05
0.01
10
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single sided copper, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026659
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single sided copper, mounting pad for drain 1 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
5 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-026660
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026661
3
10
Z
th(j-a)
(K/W) duty cycle = 1
0.75
2
10
0.50
0.20
0.33
0.10
0.05
0.01
10
0.02
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
6 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A; Tamb = 25 °C
-50
-
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A; Tamb = 25 °C
IC = 0 A; IE = -100 µA; Tamb = 25 °C
-50
-7
-
-
-
-
V
V
emitter-base
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = -50 V; IE = 0 A; Tamb = 25 °C
VCB = -50 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-100
-5
nA
µA
nA
IEBO
hFE
emitter-base cut-off
current
-100
DC current gain
VCE = -2 V; IC = -100 mA; Tamb = 25 °C [1]
VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1]
200
200
200
130
80
-
-
-
-
-
-
-
-
VCE = -2 V; IC = -1 A; Tamb = 25 °C
VCE = -2 V; IC = -2 A; Tamb = 25 °C
VCE = -2 V; IC = -3 A; Tamb = 25 °C
[1]
[1]
[1]
[1]
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
-
-90
mV
IC = -1 A; IB = -50 mA; Tamb = 25 °C
IC = -2 A; IB = -100 mA; Tamb = 25 °C
IC = -2 A; IB = -200 mA; Tamb = 25 °C
IC = -3 A; IB = -300 mA; Tamb = 25 °C
IC = -2 A; IB = -200 mA; Tamb = 25 °C
[1]
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-180
-320
-270
-390
135
mV
mV
mV
mV
mΩ
RCEsat
VBEsat
collector-emitter
saturation resistance
base-emitter saturation IC = -2 A; IB = -100 mA; Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-
-1.1
-1.2
-1.2
-
V
voltage
IC = -3 A; IB = -300 mA; Tamb = 25 °C
-
V
VBE
fT
base-emitter voltage
transition frequency
VCE = -2 V; IC = -1 A; Tamb = 25 °C
-
V
VCE = -5 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
100
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
35
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
7 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-026662
mld886
- 1200
800
h
FE
(1)
(2)
V
(mV)
BE
(3)
(4)
(5)
600
(1)
(2)
- 800
400
200
0
(6)
(3)
- 400
(7)
(8)
0
- 10
- 1
2
3
I
4
-1
-10
2
3
4
- 1
- 10
- 10
- 10
- 10
(mA)
-1
-10
-10
-10
-10
(mA)
I
C
C
VCE = - 2 V
VCE = −2 V
(1) Tamb = 175 °C
(2) Tamb = 150 °C
(3) Tamb = 125 °C
(4) Tamb = 100 °C
(5) Tamb = 85 °C
(6) Tamb = 25 °C
(7) Tamb = -40 °C
(8) Tamb = -55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 8. Base-emitter voltage as a function of collector
current; typical values
Fig. 7. DC current gain as a function of collector
current; typical values
mld887
mld888
- 1300
- 1300
V
V
BEsat
BEsat
(mV)
(mV)
(1)
(2)
(1)
(2)
- 900
- 900
(3)
(3)
- 500
- 100
- 500
- 100
- 1
2
3
4
- 1
2
3
4
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 9. Base-emitter saturation voltage as a function of Fig. 10. Base-emitter saturation voltage as a function of
collector current; typical values
collector current; typical values
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
8 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
mld889
mld890
3
3
- 10
- 10
V
V
CEsat
CEsat
(mV)
(mV)
2
2
- 10
- 10
(1)
(2)
(3)
(1)
(3)
(2)
- 10
- 10
- 1
- 10
- 1
- 10
- 1
2
- 10
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
(mA)
- 1
- 10
- 10
- 10
- 10
I (mA)
C
I
C
IC/IB = 10
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 11. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
mld891
mld892
4
4
- 10
- 10
V
(mV)
CEsat
V
CEsat
(mV)
3
2
- 10
3
- 10
- 10
(1)
(3)
(2)
2
- 10
(1)
- 10
- 1
(3) (2)
- 10
- 1
- 10
2
3
4
- 1
2
3
I
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
I
C
C
IC/IB = 50
IC/IB = 100
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 14. Collector-emitter saturation voltage as a
function of collector current; typical values
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
9 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
aaa-026691
3
10
R
CEsat
(Ω)
2
10
10
1
(1)
(3)
-1
10
(2)
2
-2
10
-1
3
4
-10
-1
-10
-10
-10
-10
(mA)
I
C
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 15. Collector-emitter saturation resistance as a function of collector current; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig. 16. Package outline TO-236AB (SOT23)
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
10 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 17. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 18. Wave soldering footprint for TO-236AB (SOT23)
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
11 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20170621
Data sheet status
Change notice
Supersedes
PBSS5350TH v.1
Product data sheet
-
-
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
12 / 14
Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Document
status [1][2] status [3]
Product
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
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liability in this respect.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
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Nexperia
PBSS5350TH
50 V, 3 A PNP low VCEsat (BISS) transistor
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................7
11. Test information....................................................... 10
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 June 2017
©
PBSS5350TH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
21 June 2017
14 / 14
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