PBSS5540Z-Q [NEXPERIA]
40 V low VCEsat PNP transistorProduction;型号: | PBSS5540Z-Q |
厂家: | Nexperia |
描述: | 40 V low VCEsat PNP transistorProduction |
文件: | 总10页 (文件大小:217K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS5540Z-Q
40 V low VCEsat PNP transistor
30 November 2021
Product data sheet
1. General description
PNP low VCEsat transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z-Q
2. Features and benefits
•
Low collector-emitter saturation voltage
•
•
•
High current capability
Improved device reliability due to reduced heat generation
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
•
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp drivers)
MOSFET driver applications.
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-40
V
IC
collector current
-
-
-
-
-5
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
-10
80
A
RCEsat
collector-emitter
IC = -2 A; IB = -200 mA; pulsed; tp ≤
55
mΩ
saturation resistance
300 µs; δ ≤ 0.02; Tamb = 25 °C
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
B
C
E
C
4
C
E
2
collector
emitter
B
3
1
2
3
4
collector
sym132
SC-73 (SOT223)
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PBSS5540Z-Q
SC-73
plastic, surface-mounted package with increased heatsink; SOT223
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PB5540
PBSS5540Z-Q
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
-40
-40
-6
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
-5
A
ICM
peak collector current
peak base current
total power dissipation
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
-10
-2
A
IBM
-
A
Ptot
[1]
[2]
-
1.35
2
W
W
°C
°C
°C
-
Tj
junction temperature
ambient temperature
storage temperature
-
150
150
150
Tamb
Tstg
-65
-65
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
-
92
62
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
2 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
IC = -100 µA; IE = 0 A
-40
-
-
V
breakdown voltage
V(BR)CEO
V(BR)EBO
collector-emitter
breakdown voltage
IC = -10 mA; IB = 0 A; Tamb = 25 °C
IE = -100 µA; IB = 0 mA; Tamb = 25 °C
-40
-6
-
-
-
-
V
V
emitter-base
breakdown voltage
(collector open)
ICBO
collector-base cut-off
current
VCB = -30 V; IE = 0 A; Tamb = 25 °C
VCB = -30 V; IE = 0 A; Tj = 150 °C
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
-100
-50
nA
µA
nA
IEBO
hFE
emitter-base cut-off
current
-100
DC current gain
VCE = -2 V; IC = -500 mA; Tamb = 25 °C
250
200
350
300
-
-
VCE = -2 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = -2 V; IC = -2 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
150
50
250
150
-
-
VCE = -2 V; IC = -5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = -500 mA; IB = -5 mA; Tamb = 25 °C
IC = -1 A; IB = -10 mA; Tamb = 25 °C
IC = -2 A; IB = -200 mA; Tamb = 25 °C
IC = -5 A; IB = -500 mA; Tamb = 25 °C
-
-
-
-
-
-80
-120
-170
-160
-375
80
mV
mV
mV
mV
mΩ
-120
-110
-250
55
RCEsat
VBEsat
VBEon
fT
collector-emitter
saturation resistance
IC = -2 A; IB = -200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = -5 A; IB = -500 mA; Tamb = 25 °C
voltage
-
-
-1.3
-1.25
-
V
base-emitter turn-on
voltage
VCE = -2 V; IC = -2 A; Tamb = 25 °C
-
-0.8
120
90
V
transition frequency
VCE = -10 V; IC = -100 mA; f = 100 MHz;
Tamb = 25 °C
60
-
MHz
pF
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
105
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
3 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
mgu391
mgu393
- 1.2
1000
h
FE
V
BE
(V)
800
600
400
(1)
(2)
(1)
- 0.8
- 0.4
0
(2)
(3)
(3)
200
0
2
3
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
I
(mA)
C
I
C
VCE = −2 V
VCE = −2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 1. DC current gain as a function of collector
current; typical values
Fig. 2. Base-emitter voltage as a function of collector
current; typical values
mgu395
mgu394
3
- 10
- 1.2
V
BEsat
(V)
V
(mV)
CEsat
(1)
(2)
2
- 0.8
- 0.4
0
- 10
(1)
(3)
(2)
(3)
- 10
- 1
- 10
- 1
2
3
I
4
- 1
2
3
4
- 1
- 10
- 10
- 10
- 10
(mA)
- 10
- 1
- 10
- 10
- 10
- 10
(mA)
I
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 3. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 4. Base-emitter saturation voltage as a function of
collector current; typical values
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
4 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
mgu392
mgu396
3
10
- 10
(2)
(1)
I
C
R
CEsat
(Ω)
(3)
(A)
(4)
(5)
(6)
- 8
2
10
(7)
(8)
- 6
- 4
(9)
10
(1)
(2)
(10)
1
(3)
- 2
0
- 1
10
- 1
2
3
4
0
- 0.4
- 0.8
- 1.2
- 1.6
- 2
(V)
- 10
- 1
- 10
- 10
- 10
- 10
I (mA)
C
V
CE
Tamb = 25 °C
IC/IB = 20
(1) IB = −150 mA
(2) IB = −135 mA
(3) IB = −120 mA
(4) IB = −105 mA
(5) IB = −90 mA
(6) IB = −75 mA
(7) IB = −60 mA
(8) IB = −45 mA
(9) IB = −30 mA
(10) IB = −15 mA
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. Collector-emitter equivalent on-resistance as a
function of collector current; typical values
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
11. Test information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
5 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
12. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
E
B
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
p
b
c
D
E
e
e
H
L
p
Q
v
w
y
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
Fig. 7. Package outline SC-73 (SOT223)
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
6 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
solder resist
4
6.1
3.9
7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 8. Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
occupied area
6.2
8.7
Dimensions in mm
1
2
3
preferred transport
direction during soldering
1.9
(3×)
2.7
2.7
1.9
(2×)
1.1
sot223_fw
Fig. 9. Wave soldering footprint for SC-73 (SOT223)
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
7 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20211130
Data sheet status
Change notice
Supersedes
PBSS5540Z-Q v.1
Product data sheet
-
-
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
8 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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customer’s applications and products using Nexperia products in order to
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Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
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customer.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
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Disclaimers
Export control — This document as well as the item(s) described herein
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Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
9 / 10
Nexperia
PBSS5540Z-Q
40 V low VCEsat PNP transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 2
10. Characteristics............................................................3
11. Test information..........................................................5
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information........................................................9
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 November 2021
©
PBSS5540Z-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
30 November 2021
10 / 10
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