PDTA114YQA [NEXPERIA]
50 V, 100 mA PNP resistor-equipped transistorsProduction;型号: | PDTA114YQA |
厂家: | Nexperia |
描述: | 50 V, 100 mA PNP resistor-equipped transistorsProduction 开关 光电二极管 晶体管 |
文件: | 总22页 (文件大小:2790K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PDTA143X/123J/143Z/114YQA
series
50 V, 100 mA PNP resistor-equipped transistors
Rev. 1 — 30 October 2015
Product data sheet
1. Product profile
1.1 General description
100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
Table 1.
Product overview
Type number
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
R1
R2
Package Nexperia NPN complement
4.7 k
2.2 k
4.7 k
10 k
10 k
47 k
47 k
47 k
DFN1010D-3
(SOT1215)
PDTC143XQA
PDTC123JQA
PDTC143ZQA
PDTC114YQA
1.2 Features and benefits
100 mA output current capability
Built-in bias resistors
Reduced pick and place costs
Low package height of 0.37 mm
AEC-Q101 qualified
Simplifies circuit design
Reduces component count
Suitable for Automatic Optical
Inspection (AOI) of solder joint
1.3 Applications
Digital applications
Controlling IC inputs
Switching loads
Cost saving alternative for
BC847/BC857 series in digital
applications
1.4 Quick reference data
Table 2.
Symbol
VCEO
Quick reference data
Parameter
Conditions
Min
Typ
Max
50
Unit
V
collector-emitter voltage
output current
open base
-
-
-
-
IO
100
mA
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
2. Pinning information
Table 3.
Pinning
Pin
1
Symbol
Description
Simplified outline
Graphic symbol
I
input (base)
O
2
GND
O
GND (emitter)
output (collector)
output (collector)
1
R1
I
3
4
3
4
O
R2
GND
2
aaa-019606
Transparent top view
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
DFN1010D-3
plastic thermal enhanced ultra thin small outline SOT1215
package; no leads; 3 terminals;
body: 1.1 1.0 0.37 mm
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
2 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
4. Marking
Table 5.
Marking codes
Type number
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
Marking code
11 11 10
11 00 01
11 01 01
11 10 11
4.1 Binary marking code description
READING
DIRECTION
MARKING CODE
(EXAMPLE)
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig 1. SOT1215 binary marking code description
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
Parameter
Conditions
open emitter
open base
Min
Max
50
50
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
PDTA143XQA
-
-
VCEO
V
VEBO
-
-
-
-
7
5
5
6
V
V
V
V
PDTA123JQA
PDTA143ZQA
PDTA114YQA
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
3 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
Table 6.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VI
input voltage
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
output current
total power dissipation
30
12
30
40
-
+7
V
+5
V
+5
V
+6
V
IO
100
280
440
150
+150
+150
mA
mW
mW
C
C
C
[1]
[2]
Ptot
Tamb 25 C
-
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
55
65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-017637
500
P
tot
(mW)
(1)
(2)
400
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, standard footprint
Fig 2. Power derating curves
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
4 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
446
284
Unit
K/W
K/W
[1]
[2]
thermal resistance from junction in free air
to ambient
-
-
-
-
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
aaa-017638
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.50
0.20
0.33
2
10
0.10
0.02
0
0.05
0.01
10
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-017639
3
10
Z
th(j-a)
duty cycle = 1
(K/W)
0.75
0.50
0.33
0.20
2
10
0.10
0.05
10
0.02
0
0.01
1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, tin-plated and standard footprint.
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
5 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
7. Characteristics
Table 8.
Characteristics
Tamb = 25 C unless otherwise specified.
Symbol
ICBO
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 50 V; IE = 0 A
-
-
100
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A
-
-
-
-
1
5
A
A
current
VCE = 30 V; IB = 0 A; Tj = 150 C
IEBO
emitter-base cut-off current
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
DC current gain
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
VEB = 5 V; IC = 0 A
-
-
-
-
-
-
-
-
600
180
170
150
A
A
A
A
hFE
VCE = 5 V; IC = 10 mA
VCE = 5 V; IC = 10 mA
VCE = 5 V; IC = 10 mA
VCE = 5 V; IC = 5 mA
50
-
-
-
-
-
-
-
-
100
100
100
VCEsat
VI(off)
VI(on)
R1
collector-emitter saturation voltage
PDTA143XQA
PDTA123JQA
IC = 10 mA; IB = 0.5 mA
-
-
-
-
-
-
-
-
100
100
100
100
mV
mV
mV
mV
IC = 5 mA; IB = 0.25 mA
IC = 5 mA; IB = 0.25 mA
IC = 5 mA; IB = 0.25 mA
PDTA143ZQA
PDTA114YQA
off-state input voltage
PDTA143XQA
PDTA123JQA
VCE = 5 V; IC = 100 A
-
-
-
-
0.9
0.6
0.6
0.7
0.3
0.5
0.5
0.5
V
V
V
V
PDTA143ZQA
PDTA114YQA
on-state input voltage
PDTA143XQA
PDTA123JQA
VCE = 0.3 V; IC = 20 mA
VCE = 0.3 V; IC = 5 mA
VCE = 0.3 V; IC = 5 mA
VCE = 0.3 V; IC = 1 mA
2.5
1.1
1.3
1.4
1.5
0.75
0.9
0.8
-
-
-
-
V
V
V
V
PDTA143ZQA
PDTA114YQA
bias resistor 1 (input)
PDTA143XQA
PDTA123JQA
[1]
3.3
1.54
3.3
7
4.7
2.2
4.7
10
6.1
2.86
6.1
13
k
k
k
k
PDTA143ZQA
PDTA114YQA
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
6 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
Table 8.
Characteristics …continued
Tamb = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[1]
R2/R1
bias resistor ratio
PDTA143XQA
PDTA123JQA
1.7
17
8
2.1
21
10
4.7
-
2.6
26
12
5.7
3
PDTA143ZQA
PDTA114YQA
3.7
-
Cc
fT
collector capacitance
transition frequency
VCB = 10 V; IE = ie = 0 A; f = 1 MHz
VCE = 5 V; IC = 10 mA; f = 100 MHz
pF
[2]
-
180
-
MHz
[1] See Section 8 “Test information” for resistor calculation and test conditions.
[2] Characteristics of built-in transistor.
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
7 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac846
aaa-018912
3
10
-0.1
(1)
(2)
(3)
I
-0.80 mA
-0.72 mA
-0.64 mA
C
(A)
h
FE
-0.08
-0.56 mA
-0.48 mA
2
10
-0.06
-0.04
-0.02
0
-0.40 mA
-0.32 mA
10
-0.24 mA
-0.16 mA
I
= -0.08 mA
B
1
-10
-1
2
-1
-10
-10
0
-1
-2
-3
-4
-5
I
C
(mA)
V
(V)
CE
VCE = 5 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 5. PDTA143XQA: DC current gain as a function of
collector current; typical values
Fig 6. PDTA143XQA: Collector current as a function
of collector-emitter voltage; typical values
aaa-018659
006aac848
-1
-10
V
V
I(on)
(V)
CEsat
(V)
(1)
(2)
-1
-10
-1
(1)
(2)
(3)
(3)
-2
-1
-10
-10
2
-1
2
-1
-10
-10
-10
-1
-10
-10
I
C
(mA)
I (mA)
C
IC/IB = 20
VCE = 0.3 V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
(1) Tamb = 100 C
(2) amb = 25 C
(3) Tamb = 40 C
T
T
Fig 7. PDTA143XQA: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. PDTA143XQA: On-state input voltage as a
function of collector current; typical values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
8 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac849
006aac850
-10
8
C
c
(pF)
V
(V)
I(off)
6
4
2
0
(1)
-1
(2)
(3)
-1
-10
-1
-10
-1
-10
0
-10
-20
-30
-40
V
-50
(V)
I
C
(mA)
CB
VCE = 5 V
f = 1 MHz; Tamb = 25 C
(1) Tamb = 40 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
Fig 9. PDTA143XQA: Off-state input voltage as a
function of collector current; typical values
Fig 10. PDTA143XQA: Collector capacitance as a
function of collector-base voltage; typical
values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
9 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac814
aaa-018916
3
10
-0.1
-0.80 mA
I
C
(A)
-0.72 mA
-0.64 mA
(1)
h
FE
(2)
(3)
-0.08
-0.56 mA
-0.48 mA
2
10
-0.40 mA
-0.32 mA
-0.06
-0.04
-0.02
0
-0.24 mA
-0.16 mA
10
I
= -0.08 mA
B
1
-10
-1
2
-1
-10
-10
0
-1
-2
-3
-4
-5
I
C
(mA)
V
(V)
CE
VCE = 5 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 11. PDTA123JQA: DC current gain as a function of
collector current; typical values
Fig 12. PDTA123JQA: Collector current as a function
of collector-emitter voltage; typical values
aaa-018913
006aac816
-1
-10
V
V
I(on)
(V)
CEsat
(V)
(1)
(2)
-1
-10
-1
(1)
(2)
(3)
(3)
-2
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
C
(mA)
I (mA)
C
IC/IB = 20
(1) Tamb = 100 C
(2) amb = 25 C
(3) Tamb = 40 C
VCE = 0.3V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
T
T
Fig 13. PDTA123JQA: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 14. PDTA123JQA: On-state input voltage as a
function of collector current; typical values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
10 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac817
006aac818
-1
9
(1)
(2)
C
(pF)
c
V
I(off)
(V)
(3)
6
3
0
-1
-10
-1
-10
-1
-10
0
-10
-20
-30
-40
V
-50
(V)
I
C
(mA)
CB
VCE = 5 V
f = 1 MHz; Tamb = 25 C
(1) Tamb = 40 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
Fig 15. PDTA123JQA: Off-state input voltage as a
function of collector current; typical values
Fig 16. PDTA123JQA: Collector capacitance as a
function of collector-base voltage; typical
values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
11 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac824
aaa-018917
3
10
-0.1
-0.70 mA
I
C
(A)
h
FE
-0.63 mA
-0.56 mA
(1)
-0.08
(2)
-0.49 mA
-0.42 mA
-0.35 mA
(3)
2
10
-0.06
-0.04
-0.02
0
-0.28 mA
-0.21 mA
10
-0.14 mA
I
= -0.07 mA
B
1
-10
-1
2
-1
-10
-10
0
-1
-2
-3
-4
-5
I
C
(mA)
V
(V)
CE
VCE = 5 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 17. PDTA143ZQA: DC current gain as a function of
collector current; typical values
Fig 18. PDTA143ZQA: Collector current as a function
of collector-emitter voltage; typical values
aaa-018914
006aac826
-1
-10
V
V
I(on)
(V)
CEsat
(V)
(1)
-1
-10
-1
(2)
(3)
(1)
(2)
(3)
-2
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
C
(mA)
I (mA)
C
IC/IB = 20
(1) Tamb = 100 C
(2) amb = 25 C
(3) Tamb = 40 C
VCE = 0.3 V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
T
T
Fig 19. PDTA143ZQA: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 20. PDTA143ZQA: On-state input voltage as a
function of collector current; typical values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
12 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac827
006aac828
-10
8
C
c
(pF)
V
(V)
I(off)
6
4
2
0
(1)
-1
(2)
(3)
-1
-10
-1
-10
-1
-10
0
-10
-20
-30
-40
V
-50
(V)
I
(mA)
C
CB
VCE = 5 V
f = 1 MHz; Tamb = 25 C
(1) Tamb = 40 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
Fig 21. PDTA143ZQA: Off-state input voltage as a
function of collector current; typical values
Fig 22. PDTA143ZQA: Collector capacitance as a
function of collector-base voltage; typical
values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
13 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac789
aaa-018918
3
10
-0.1
-0.80 mA
I
C
(A)
-0.72 mA
-0.64 mA
-0.56 mA
h
FE
(1)
-0.08
(2)
(3)
-0.48 mA
-0.40 mA
2
10
-0.06
-0.04
-0.02
0
-0.32 mA
-0.24 mA
10
-0.16 mA
I
= -0.08 mA
B
1
-10
-1
2
-1
-10
-10
0
-1
-2
-3
-4
-5
I
C
(mA)
V
(V)
CE
VCE = 5 V
amb = 100 C
Tamb = 25 C
(1)
T
(2) Tamb = 25 C
(3) Tamb = 40 C
Fig 23. PDTA114YQA: DC current gain as a function of
collector current; typical values
Fig 24. PDTA114YQA: Collector current as a function
of collector-emitter voltage; typical values
aaa-018915
006aac791
-1
-10
V
V
I(on)
(V)
CEsat
(V)
(1)
-1
(2)
(3)
-10
-1
(1)
(2)
(3)
-2
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
C
(mA)
I (mA)
C
IC/IB = 20
(1) Tamb = 100 C
(2) amb = 25 C
(3) Tamb = 40 C
VCE = 0.3 V
(1) Tamb = 40 C
(2) amb = 25 C
(3) Tamb = 100 C
T
T
Fig 25. PDTA114YQA: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 26. PDTA114YQA: On-state input voltage as a
function of collector current; typical values
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
14 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
006aac792
006aac793
-10
7
C
c
(pF)
6
5
4
3
2
1
0
V
I(off)
(V)
(1)
(2)
(3)
-1
-1
-10
-1
-10
-1
-10
0
-10
-20
-30
-40
V
-50
(V)
I
C
(mA)
CB
VCE = 5 V
f = 1 MHz; Tamb = 25 C
(1) Tamb = 40 C
(2) Tamb = 25 C
(3)
Tamb = 100 C
Fig 27. PDTA114YQA: Off-state input voltage as a
function of collector current; typical values
Fig 28. PDTA114YQA: Collector capacitance as a
function of collector-base voltage; typical
values
006aac763
3
10
f
T
(MHz)
2
10
10
-10
-1
2
-1
-10
-10
I
C
(mA)
VCE = 5 V; Tamb = 25 C
Fig 29. Transition frequency as a function of collector current; typical values of built-in transistor
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
15 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
8.2 Resistor calculation
• Calculation of bias resistor 1 (R1):
VII2 – VII1
-----------------------------------
R1 =
II2 – II1
• Calculation of bias resistor ratio (R2/R1):
VII4 – VII3
-----------------------------------
R1 II4 – I13
R2
R1
------
=
– 1
n.c.
I
I
; I
I1 I2
R1
; I
I3 I4
R2
GND
aaa-020083
Fig 30. Resistor test circuit
8.3 Resistor test conditions
Table 9.
Resistor test conditions
Type number
R1 (k)
R2 (k)
Test conditions
II1
II2
II3
II4
PDTA143XQA
PDTA123JQA
PDTA143ZQA
PDTA114YQA
4.7
2.2
4.7
10
10
47
47
47
350 A
90 A
90 A
90 A
450 A
140 A
140 A
140 A
350 A
55 A
55 A
55 A
450 A
105 A
105 A
105 A
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
16 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
9. Package outline
0.87
0.95
0.75
0.22
0.30
0.17
1
2
0.25
0.95
1.05
0.16
0.24
0.1
0.195
0.275
3
0.04
max
0.245
0.325
0.34
0.40
1.05
1.15
Dimensions in mm
13-03-05
Fig 31. Package outline DFN1010D-3 (SOT1215)
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
17 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
10. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.35 (2x)
0.3
1.1
0.25 (2x)
0.4
0.75
0.3 0.4
0.5
0.4
0.5
0.5 1.3
1.5 1.4
0.3 0.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
solder resist
occupied area
Dimensions in mm
12-11-23
13-03-06
sot1215_fr
Issue date
Fig 32. Reflow soldering footprint DFN1010D-3 (SOT1215)
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
18 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
11. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PDTA143X_123J_143Z_ 20151030
114YQA_SER v.1
Product data sheet
-
-
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
19 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
12.2 Definitions
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Nexperia does not accept any liability related to any default,
12.3 Disclaimers
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
20 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PDTA143X_123J_143Z_114YQA_SER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 30 October 2015
21 of 22
PDTA143X/123J/143Z/114YQA
Nexperia
50 V, 100 mA PNP resistor-equipped transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Binary marking code description. . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
4.1
5
6
7
8
Test information. . . . . . . . . . . . . . . . . . . . . . . . 16
Quality information . . . . . . . . . . . . . . . . . . . . . 16
Resistor calculation . . . . . . . . . . . . . . . . . . . . 16
Resistor test conditions . . . . . . . . . . . . . . . . . 16
8.1
8.2
8.3
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 19
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 21
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 30 October 2015
相关型号:
PDTA114YTT/R
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
PDTA114YU,115
PDTA114Y series - PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ SC-70 3-Pin
NXP
PDTA115EE,115
PDTA115E series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm SC-75 3-Pin
NXP
©2020 ICPDF网 联系我们和版权申明