PDTB123ET [NEXPERIA]
PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction;
| 型号： | PDTB123ET |
| 厂家： | 
Nexperia |
| 描述： | PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhmProduction PC 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Dear Customer,
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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PDTB123ET
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 3 — 22 September 2010
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123ET.
1.2 Features and benefits
500 mA output current capability
Built-in bias resistors
Reduces pick and place costs
±10 % resistor ratio tolerance
AEC-Q101 qualified
Simplifies circuit design
Reduces component count
1.3 Applications
Digital application in automotive and
industrial segments
Cost-saving alternative for BC807 series
in digital applications
Control of IC inputs
Switching loads
1.4 Quick reference data
Table 1.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
−50
Unit
V
collector-emitter voltage
output current
open base
-
-
−500
2.86
1.1
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
1.54
0.9
2.2
1.0
R2/R1
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
input (base)
3
3
2
2
GND (emitter)
output (collector)
R1
1
3
R2
1
2
006aaa144
sym003
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PDTB123ET
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PDTB123ET
*7S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max
−50
−50
−10
Unit
V
VCBO
VCEO
VEBO
VI
collector-base voltage
-
-
-
collector-emitter voltage
emitter-base voltage
input voltage
V
open collector
V
positive
-
-
-
+10
−12
V
negative
V
IO
output current
−500
mA
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
2 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
-
Max
250
Unit
mW
°C
[1]
Ptot
Tj
total power dissipation
Tamb ≤ 25 °C
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6.
Thermal characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
[1]
Rth(j-a)
thermal resistance from in free air
junction to ambient
-
-
500
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
−100
−100
−0.5
Unit
nA
ICBO
collector-base
cut-off current
VCB = −40 V; IE = 0 A
VCB = −50 V; IE = 0 A
VCE = −50 V; IB = 0 A
-
-
-
-
-
-
nA
ICEO
IEBO
collector-emitter
cut-off current
μA
emitter-base
VEB = −5 V; IC = 0 A
-
-
−2.0
-
mA
cut-off current
hFE
DC current gain
VCE = −5 V;
IC = −50 mA
40
-
-
VCEsat
VI(off)
VI(on)
collector-emitter
saturation voltage
IC = −50 mA;
IB = −2.5 mA
-
−0.3
−1.8
−2.0
V
off-state input voltage
on-state input voltage
VCE = −5 V;
IC = −100 μA
−0.6
−1.0
−1.1
−1.5
V
VCE = −0.3 V;
IC = −20 mA
V
R1
bias resistor 1 (input)
bias resistor ratio
1.54
0.9
-
2.2
1.0
11
2.86
1.1
-
kΩ
R2/R1
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A;
f = 100 MHz
pF
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
3 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
006aaa353
006aaa354
3
−1
10
−10
(1)
(2)
(3)
h
FE
V
CEsat
(V)
2
10
(1)
(2)
(3)
10
1
−1
−10
−2
10
−10
−1
2
3
2
−1
−10
−10
−10
−1
−10
−10
I
C
(mA)
I (mA)
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa355
006aaa356
−10
−10
V
(V)
V
I(off)
(V)
I(on)
(1)
(2)
(3)
(1)
(2)
(3)
−1
−1
−1
−10
−1
−10
−10
−10
−1
2
3
−1
−1
−10
−10
−10
−1
−10
I
C
(mA)
I (mA)
C
VCE = −0.3 V
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values
Fig 4. Off-state input voltage as a function of
collector current; typical values
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
4 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 5. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-215
10000
PDTB123ET
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
5 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 6. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 7. Wave soldering footprint SOT23 (TO-236AB)
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
6 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
12. Revision history
Table 9.
Revision history
Document ID
PDTB123ET v.3
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100922
Product data sheet
-
PDTB123E_SER_2
• Type numbers PDTB123EK and PDTB123ES deleted.
• Table 7 “Characteristics”: unit for VCEsat changed from mV to V.
• Section 8 “Test information”: added.
• Section 11 “Soldering”: added.
• Section 13 “Legal information”: updated.
PDTB123E_SER_2
PDTB123E_SER_1
20091116
Product data sheet
-
-
PDTB123E_SER_1
-
20050427
Product data sheet
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
7 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
8 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTB123ET
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 22 September 2010
9 of 10
PDTB123ET
NXP Semiconductors
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
Quality information . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information . . . . . . . . . . . . . . . . . . . . . 5
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 September 2010
Document identifier: PDTB123ET
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