PESD3V3L2UM [NEXPERIA]
Low capacitance double ESD protection diodeProduction;
| 型号： | PESD3V3L2UM |
| 厂家： | 
Nexperia |
| 描述： | Low capacitance double ESD protection diodeProduction 局域网 二极管 |
| 文件： | 总10页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
PESDxL2UM series
Low capacitance double ESD
protection diode
Product specification
2005 May 23
Supersedes data of 2003 Aug 05
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
FEATURES
DESCRIPTION
• Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
• Reverse standoff voltage 3.3 and 5 V
• Low diode capacitance
• Ultra low leakage current
PINNING
• Leadless ultra small SOT883 surface mount package
(1 × 0.6 × 0.5 mm)
PIN
DESCRIPTION
• Board space 1.17 mm2 (approx. 10% of SOT23)
1
2
3
cathode 1
cathode 2
• ESD protection >15 kV
common anode
• IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
APPLICATIONS
• Cellular handsets and accessories
• Portable electronics
• Computers and peripherals
• Communication systems
• Audio and video equipment.
1
Top view
2
2
1
3
3
MARKING
Bottom view
MLE220
TYPE NUMBER
PESD3V3L2UM
PESD5V0L2UM
MARKING CODE
F2
F1
Fig.1 Simplified outline (SOT883) and symbol.
2005 May 23
2
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
Ipp
peak pulse current
8/20 µs pulse; notes 1, 2 and 3
PESD3V3L2UM
−
−
−
−
3
A
PESD5V0L2UM
2.5
30
A
Ppp
peak pulse power
8/20 µs pulse; notes 1, 2 and 3
tp = 1 ms; square pulse
W
A
IFSM
IZSM
non-repetitive peak forward current
non-repetitive peak reverse current
PESD3V3L2UM
3.5
tp = 1 ms; square pulse
−
−
−
−
0.9
0.8
250
6
A
PESD5V0L2UM
A
Ptot
total power dissipation
Tamb = 25 °C; note 4
mW
W
PZSM
non-repetitive peak reverse power
dissipation
tp = 1 ms; square pulse; see Fig.4
Tstg
Tj
storage temperature
junction temperature
electrostatic discharge
−65
+150
150
−
°C
°C
kV
kV
−
ESD
IEC 61000-4-2 (contact discharge) 15
HBM MIL-Std 883 10
−
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
IEC 61000-4-2, level 4 (ESD)
HBM MIL-Std 883, class 3
>15 kV (air); >8 kV (contact)
>4 kV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
all diodes loaded; note 1
one diode loaded; note 2
500
290
K/W
K/W
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.
2. FR4 single-sided copper 1 cm2.
2005 May 23
3
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 200 mA
−
1
1.2
V
VRWM
reverse stand-off voltage
PESD3V3L2UM
−
−
−
−
3.3
5
V
V
PESD5V0L2UM
IRM
reverse leakage current
PESD3V3L2UM
VR = 3.3 V
−
−
75
5
300
25
nA
nA
PESD5V0L2UM
VR = 5 V
V(CL)R
clamping voltage
PESD3V3L2UM
8/20 µs pulse
Ipp = 1 A; notes 1 and 2
Ipp = 3 A; notes 1 and 2
Ipp = 1 A; notes 1 and 3
Ipp = 3 A; notes 1 and 3
Ipp = 1 A; notes 1 and 2
Ipp = 2.5 A; notes 1 and 2
Ipp = 1 A; notes 1 and 3
Ipp = 2.5 A; notes 1 and 3
IZ = 1 mA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
8
V
V
V
V
V
V
V
V
12
9
13
10
13
11
15
PESD5V0L2UM
VBR
breakdown voltage
PESD3V3L2UM
PESD5V0L2UM
temperature coefficient
PESD3V3L2UM
PESD5V0L2UM
differential resistance
PESD3V3L2UM
PESD5V0L2UM
diode capacitance
PESD3V3L2UM
5.32
6.46
5.6
6.8
5.88
7.14
V
V
SZ
IZ = 1 mA
IR = 1 mA
−
−
1.3
2.9
−
−
mV/K
mV/K
rdiff
−
−
−
−
200
100
Ω
Ω
Cd
f = 1 MHz; VR = 0
f = 1 MHz; VR = 5
f = 1 MHz; VR = 0
f = 1 MHz; VR = 5
−
−
−
−
22
12
16
8
28
17
19
11
pF
pF
pF
pF
PESD5V0L2UM
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
2005 May 23
4
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
MLE215
MLE216
10
26
handbook, halfpage
handbook, halfpage
C
d
(pF)
22
I
ZSM
(A)
18
14
PESD3V3L2UM
1
PESD3V3L2UM
PESD5V0L2UM
PESD5V0L2UM
10
−1
10
6
0
−2
−1
10
10
1
10
1
2
3
4
5
t
(ms)
V
(V)
p
R
Tj = 25 °C; f = 1 MHz.
Fig.2 Non-repetitive peak reverse current as a
function of pulse time (square pulse).
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
MLE217
MLE218
2
10
120
handbook, halfpage
handbook, halfpage
I
pp
100 % I ; 8 µs
pp
P
ZSM
(%)
(W)
80
−t
e
PESD3V3L2UM
10
50 % I ; 20 µs
pp
PESD5V0L2UM
40
1
10
0
−2
−1
10
1
10
0
10
20
30
40
t
(ms)
t (µs)
p
PZSM = VZSM x IZSM
.
VZSM is the non-repetitive peak reverse voltage at IZSM
.
Fig.4 Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.5 8/20 µs pulse waveform according to
IEC 61000-4-5.
2005 May 23
5
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
ESD TESTER
RG 223/U
4 GHz DIGITAL
50 Ω coax
OSCILLOSCOPE
R
Z
450 Ω
10×
ATTENUATOR
50 Ω
C
Z
note 1
1
2
D.U.T
PESDxL2UM
Note 1: IEC 61000-4-2 network
C
= 150 pF; R = 330 Ω
Z
Z
3
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L2UM
GND2
PESD3V3L2UM
GND
GND1
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
MLE219
Fig.6 ESD clamping test set-up and waveforms.
6
2005 May 23
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2005 May 23
7
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2005 May 23
8
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2005
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/02/pp9
Date of release: 2005 May 23
Document order number: 9397 750 15162
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