PHB47NQ10T [NEXPERIA]
N-channel TrenchMOS standard level FETProduction;
| 型号： | PHB47NQ10T |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS standard level FETProduction 开关 脉冲 晶体管 |
| 文件： | 总14页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PHB47NQ10T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
Suitable for high frequency
applications due to fast switching
characteristics
on-state resistance
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
100
47
V
A
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 2
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 3
-
-
-
166
-
W
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 40 A;
21
nC
VDS = 80 V; Tj = 25 °C;
see Figure 13
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
-
20
28
mΩ
see Figure 11 and 12
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
[1]
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
2
1
3
SOT404 (D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PHB47NQ10T
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
SOT404
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
2 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
100
100
20
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
V
-20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 2
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 2
-
33
A
-
47
A
IDM
Ptot
Tstg
Tj
peak drain current
-
187
166
175
175
A
total power dissipation Tmb = 25 °C; see Figure 3
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
47
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
187
Avalanche ruggedness
EDS(AL)S non-repetitive
VGS = 5 V; Tj(init) = 25 °C; ID = 30 A; Vsup ≤ 25 V;
-
45
mJ
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 Ω; see Figure 4
energy
03aa24
003aaa097
3
120
10
I
I
D
der
R
= V / I
DSon DS
D
(A)
(%)
t
=
p
2
10
80
1 μs
10 μs
100 μs
40
10
1
1 ms
D.C.
10 ms
100 ms
0
2
3
1
10
10
10
0
50
100
150
200
T
mb
(°C)
V
DS
(V)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
3 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa16
003aaa098
2
120
10
P
der
(%)
I
AS
(A)
80
25 °C
10
40
T prior to avalanche = 150 °C
j
1
0
−3
−2
−1
10
10
10
1
10
0
50
100
150
200
T
mb
(°C)
t
p
(ms)
Fig 4. Non-repetitive avalanche ruggedness current
as a function of pulse duration
Fig 3. Normalized total power dissipation as a
function of mounting base temperature
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 5
junction to mounting
base
-
-
0.9
K/W
Rth(j-a)
thermal resistance from mounted on printed-circuit board;
-
50
-
K/W
junction to ambient
minimum footprint
003aaa099
1
δ =
0.5
Z
th (j-mb)
(K/W)
0.2
−1
10
0.1
0.05
0.02
t
p
P
δ =
−2
Single pulse
10
T
t
t
p
T
−3
10
−7
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
10
1
10
t
(s)
p
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
4 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
100
1
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
-
-
see Figure 10
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10
2
3
4
IDSS
drain leakage current
gate leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.05
10
µA
µA
nA
nA
mΩ
-
500
100
100
76
IGSS
2
2
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
20
28
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 40 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; see Figure 13
-
-
-
-
-
-
66
-
nC
nC
nC
pF
pF
pF
12
-
21
-
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 14
2320
315
187
3100
378
256
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
15
70
83
45
23
ns
ns
ns
ns
105
116
63
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 15
-
0.85
1.2
V
trr
reverse recovery time
recovered charge
IS = 47 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
-
-
66
-
-
ns
Qr
0.24
µC
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
5 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aaa100
003aaa101
180
100
I
D
20 V
I
D
(A)
V
GS
= 10 V
8.0 V
160
140
120
(A)
80
60
40
7.5 V
7.0 V
100
80
6.5 V
6.0 V
5.5 V
60
40
20
T = 175 °C
j
20
0
5.0 V
4.5 V
25 °C
0
0
2
4
6
8
0
2
4
6
8
10
V
DS
(V)
V
(V)
GS
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaa078
003aaa104
−1
10
45
g
fs
I
(S)
D
40
35
30
25
(A)
−2
10
2%
typ
98%
−3
−4
−5
−6
10
10
10
10
20
15
10
5
0
0
1
2
3
4
5
0
20
40
60
80
100
I
D
(A)
V
GS
(V)
Fig 8. Sub-threshold drain current as a function of
gate-source voltage
Fig 9. Forward transconductance as a function of
drain current; typical values
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
6 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aaa023
003aaa102
4.5
4
65
60
55
50
45
40
35
30
25
20
15
6.5 V
6.0 V
V
GS
= 5.5 V
R
(mΩ)
DSon
V
GS(th)
(V)
max
3.5
3
2.5
2
typ
7.0 V
7.5 V
min
8.0 V
10 V
1.5
1
0.5
0
5
25
45
65
85
105
125
(A)
−60
−20
20
60
100
140
180
T (°C)
j
I
D
Fig 10. Gate-source threshold voltage as a function of
junction temperature
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
003aaa103
003aaa107
10
2.0
V
(V)
GS
1.8
a
1.6
8
6
4
2
0
V
DD
= 20 V
1.4
1.2
1.0
0.8
0.6
V
DD
= 80 V
0.4
0.2
0
−60
-20
20
60
100
140
180
0
10
20
30
40
50
60
Q
70
(nC)
T (°C)
j
G
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate-source voltage as a function of gate
charge; typical values
PHB47NQ10T_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
7 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aaa105
003aaa106
5
100
80
C
, C
,
iss oss
I
S
C
rss
(A)
C
iss
(nF)
4
C
oss
3
2
1
0
60
T = 175 °C
j
25 °C
C
rss
40
20
0
−2
−1
2
0
0.2
0.4
0.6
0.8
1.0
1.2
V (V)
SD
1.4
10
10
1
10
10
V
DS
(V)
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 15. Source current as a function of source-drain
voltage; typical values
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
8 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 16. Package outline SOT404 (D2PAK)
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
9 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
PHB47NQ10T_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100225
Product data sheet
-
PHP_PHB_47NQ10T-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
PHP_PHB_47NQ10T-01 20010516
(9397 750 08243)
Product data
-
-
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
10 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
9.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
PHB47NQ10T_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
11 of 13
PHB47NQ10T
NXP Semiconductors
N-channel TrenchMOS standard level FET
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use of
the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless the data sheet of an NXP
Semiconductors product expressly states that the product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PHB47NQ10T_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
12 of 13
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NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 February 2010
Document identifier: PHB47NQ10T_2
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