PHP18NQ11T [NEXPERIA]

N-channel TrenchMOS standard level FETProduction;
PHP18NQ11T
型号: PHP18NQ11T
厂家: Nexperia    Nexperia
描述:

N-channel TrenchMOS standard level FETProduction

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PHP18NQ11T  
N-channel TrenchMOS standard level FET  
Rev. 02 — 10 March 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product is designed and qualified for use in  
computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
„ Higher operating power due to low  
„ Suitable for high frequency  
applications due to fast switching  
characteristics  
thermal resistance  
1.3 Applications  
„ Class-D audio amplifiers  
„ DC-to-DC convertors  
„ Inverters  
„ Switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
drain-source voltage Tj 25 °C; Tj 175 °C  
Min  
Typ  
Max Unit  
VDS  
ID  
-
-
-
-
110  
18  
V
A
drain current  
Tmb = 25 °C; VGS = 10 V;  
see Figure 1 and 3  
Ptot  
total power  
dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
79  
-
W
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 18 A;  
8
nC  
VDS = 80 V; Tj = 25 °C;  
see Figure 11  
Static characteristics  
RDSon  
drain-source  
on-state resistance  
VGS = 10 V; ID = 9 A;  
Tj = 25 °C;  
-
80  
90  
mΩ  
see Figure 9 and 10  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
2. Pinning information  
Table 2.  
Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
G
D
S
D
gate  
mb  
D
2
drain  
source  
3
G
mb  
mounting base; connected to  
drain  
mbb076  
S
1
2 3  
SOT78 (TO-220AB)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PHP18NQ11T  
TO-220AB  
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78  
TO-220AB  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
110  
110  
20  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tj 25 °C; Tj 175 °C; RGS = 20 kΩ  
-
VDGR  
VGS  
-
V
-20  
V
ID  
VGS = 10 V; Tmb = 100 °C; see Figure 1  
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3  
tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3  
-
13  
A
-
18  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
-
72  
A
total power dissipation Tmb = 25 °C; see Figure 2  
storage temperature  
-
79  
W
°C  
°C  
-55  
-55  
175  
175  
junction temperature  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
-
-
18  
72  
A
A
ISM  
tp 10 µs; pulsed; Tmb = 25 °C  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive  
VGS = 10 V; Tj(init) = 25 °C; ID = 11 A; Vsup 25 V;  
-
70  
mJ  
drain-source avalanche unclamped; tp = 0.1 ms; RGS = 50 Ω  
energy  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
2 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
03aa24  
03aa16  
120  
120  
I
P
der  
der  
(%)  
(%)  
80  
80  
40  
40  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
mb  
(°C)  
T
mb  
(°C)  
Fig 1. Normalized continuous drain current as a  
function of mounting base temperature  
Fig 2. Normalized total power dissipation as a  
function of mounting base temperature  
003aaa591  
2
10  
Limit R  
= V / I  
DS D  
DSon  
I
D
(A)  
t
p
= 10 μs  
10  
100 μs  
DC  
1 ms  
10 ms  
100 ms  
1
1  
10  
2
3
1
10  
10  
10  
V
DS  
(V)  
Fig 3. Safe operating area: continuous and peak currents as a function of drain-source voltage  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
3 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from see Figure 4  
junction to mounting  
base  
-
-
1.9  
K/W  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
60  
-
K/W  
003aaa592  
10  
Z
th(j-mb)  
(K/W)  
δ = 0.5  
1
0.2  
0.1  
0.05  
0.02  
1  
10  
t
p
P
δ =  
T
single pulse  
t
t
p
T
2  
10  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
1
t
p
(s)  
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
4 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
98  
110  
1
-
-
-
-
-
-
V
V
V
VGS(th)  
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;  
voltage  
see Figure 8  
ID = 1 mA; VDS = VGS; Tj = 25 °C;  
see Figure 8  
2
-
3
-
4
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;  
see Figure 8  
4.4  
IDSS  
drain leakage current  
gate leakage current  
VDS = 110 V; VGS = 0 V; Tj = 25 °C  
VDS = 110 V; VGS = 0 V; Tj = 175 °C  
VGS = 10 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
0.05  
-
10  
µA  
µA  
nA  
nA  
mΩ  
500  
100  
100  
243  
IGSS  
10  
10  
-
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 9 A; Tj = 175 °C;  
see Figure 9 and 10  
VGS = 10 V; ID = 9 A; Tj = 25 °C;  
see Figure 9 and 10  
-
80  
90  
mΩ  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
ID = 18 A; VDS = 80 V; VGS = 10 V;  
Tj = 25 °C; see Figure 11  
-
-
-
-
-
-
21  
4
-
-
-
-
-
-
nC  
nC  
nC  
pF  
pF  
pF  
8
VDS = 25 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; see Figure 12  
633  
103  
61  
Coss  
Crss  
reverse transfer  
capacitance  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 50 V; RL = 2.7 ; VGS = 10 V;  
RG(ext) = 5.6 ; Tj = 25 °C; ID = 18.5 A  
-
-
-
-
6
-
-
-
-
ns  
ns  
ns  
ns  
36  
18  
12  
turn-off delay time  
fall time  
Source-drain diode  
VSD  
source-drain voltage  
IS = 18 A; VGS = 0 V; Tj = 25 °C;  
see Figure 13  
-
0.92  
1.2  
V
trr  
reverse recovery time  
recovered charge  
IS = 18 A; dIS/dt = 100 A/µs; VGS = 0 V;  
VDS = 25 V; Tj = 25 °C  
-
-
55  
-
-
ns  
Qr  
135  
nC  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
5 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
003aaa595  
003aaa593  
20  
20  
V
GS  
= 10 V  
I
I
D
D
(A)  
(A)  
6 V  
15  
15  
10  
5
10  
5
5.4 V  
5.2 V  
5 V  
T = 175 °C  
j
T = 25 °C  
j
4.8 V  
4.6 V  
0
0
0
0.5  
1
1.5  
2
0
2
4
6
8
V
(V)  
V
GS  
(V)  
DS  
Fig 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
03aa35  
03aa32  
1  
10  
5
I
V
D
GS(th)  
(V)  
(A)  
min  
typ  
max  
2  
3  
4  
5  
6  
10  
10  
10  
10  
10  
4
max  
3
typ  
2
min  
1
0
0
2
4
6
60  
0
60  
120  
180  
V
GS  
(V)  
T (°C)  
j
Fig 7. Sub-threshold drain current as a function of  
gate-source voltage  
Fig 8. Gate-source threshold voltage as a function of  
junction temperature  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
6 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
03am64  
03aa29  
3
2
1
0
0.2  
4.8  
5
5.2  
5.4  
Tj = 25 °C  
RDSon  
(Ω)  
VGS (V) =  
a
0.15  
0.1  
6
10  
0.05  
0
0
4
8
12  
-60  
0
60  
120  
180  
I
D (A)  
T ( C)  
°
j
Fig 9. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 10. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
03am67  
003aaa597  
104  
10  
V
GS  
C
(pF)  
(V)  
8
6
4
2
0
20 V  
V
= 80 V  
DD  
103  
Ciss  
102  
Coss  
Crss  
10  
10-1  
0
10  
20  
30  
1
10  
102  
Q
(nC)  
VDS (V)  
G
Fig 11. Gate-source voltage as a function of gate  
charge; typical values  
Fig 12. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
7 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
003aaa596  
20  
I
S
(A)  
15  
T = 175 °C  
j
10  
5
25 °C  
0
0
0.3  
0.6  
0.9  
1.2  
V
(V)  
SD  
Fig 13. Source current as a function of source-drain voltage; typical values  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
8 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
7. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
D
1
base  
D
(1)  
(1)  
L
1
L
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
Fig 14. Package outline SOT78 (TO-220AB)  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
9 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
8. Revision history  
Table 7.  
Revision history  
Document ID  
PHP18NQ11T_2  
Modifications:  
Release date  
Data sheet status  
Change notice  
Supersedes  
20100310  
Product data sheet  
-
PHP18NQ11T-01  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
PHP18NQ11T-01 (9397  
750 12305)  
20031113  
Product data  
-
-
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
10 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
9. Legal information  
9.1 Data sheet status  
Document status [1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nexperia.com.  
Suitability for use — Nexperia products are not designed,  
9.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia accepts no liability for inclusion and/or use of  
Nexperia products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on a weakness or default in the  
customer application/use or the application/use of customer’s third party  
customer(s) (hereinafter both referred to as “Application”). It is customer’s  
sole responsibility to check whether the Nexperia product is  
suitable and fit for the Application planned. Customer has to do all necessary  
testing for the Application in order to avoid a default of the Application and the  
product. Nexperia does not accept any liability in this respect.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
9.3 Disclaimers  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale — Nexperia  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — Nexperia reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
11 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of  
9.4 Trademarks  
non-automotive qualified products in automotive equipment or applications.  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
10. Contact information  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
PHP18NQ11T_2  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 10 March 2010  
12 of 13  
PHP18NQ11T  
Nexperia  
N-channel TrenchMOS standard level FET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2  
Thermal characteristics . . . . . . . . . . . . . . . . . . .4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .12  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 10 March 2010  

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