PHPT61003NY [NEXPERIA]
100 V, 3 A NPN high power bipolar transistorProduction;型号: | PHPT61003NY |
厂家: | Nexperia |
描述: | 100 V, 3 A NPN high power bipolar transistorProduction |
文件: | 总14页 (文件大小:277K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
10 September 2020
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power
plastic package.
PNP complement: PHPT61003PY
2. Features and benefits
•
High thermal power dissipation capability
•
•
•
•
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
Power management
Loadswitch
Linear mode voltage regulator
Backlighting applications
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
-
-
3
A
ICM
peak collector current single pulse; tp ≤ 1 ms
-
8
A
RCEsat
collector-emitter
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
90
150
mΩ
saturation resistance
pulsed; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 300 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
75
110
mΩ
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
emitter
Simplified outline
Graphic symbol
E
E
E
B
C
mb
C
2
emitter
B
3
emitter
E
4
base
sym123
1
2 3 4
mb
collector
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PHPT61003NY
LFPAK56;
plastic, single-ended surface-mounted package; 4 terminals
SOT669
Power-SO8
7. Marking
Table 4. Marking codes
Type number
Marking code
PHPT61003NY
1003NAB
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
2 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
100
100
7
Unit
V
collector-base voltage
open emitter
-
collector-emitter voltage open base
-
V
emitter-base voltage
collector current
open collector
-
V
-
3
A
ICM
peak collector current
base current
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
-
8
A
IB
-
0.5
1.25
3
A
Ptot
total power dissipation
[1]
[2]
[3]
[4]
-
W
W
W
W
°C
°C
°C
-
-
5
-
25
Tj
junction temperature
ambient temperature
storage temperature
-
175
175
175
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB) single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm2.
[3] Device mounted on an ceramic PCB; Al2O3; standard footprint.
[4] Power dissipation from junction to mounting base.
aaa-010424
8
P
tot
(W)
6
4
2
0
(1)
(2)
(3)
-75
25
125
225
T
(°C)
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
3 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
115
50
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
-
-
30
Rth(j-sp)
thermal resistance from
junction to solder point
6
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2.
[3] Device mounted on an ceramic PCB; Al2O3; standard footprint.
aaa-010427
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.2
0.1
10
0.05
0.02
0.01
0
0.25
1
-1
10
-5
-4
-3
-2
-1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-010428
2
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.1
0.33
0.2
10
0.05
0.01
0.02
0
0.25
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
4 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
100
50
Unit
nA
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
-
-
-
-
µA
ICES
IEBO
hFE
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
100
nA
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
-
nA
DC current gain
VCE = 10 V; IC = 500 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
150
250
250
100
40
VCE = 10 V; IC = 1 A; tp ≤ 300 µs; δ ≤
0.02; Tamb = 25 °C; pulsed
80
20
10
-
-
VCE = 10 V; IC = 2 A; tp ≤ 300 µs; δ ≤
0.02; Tamb = 25 °C; pused
-
VCE = 10 V; IC = 3 A; tp ≤ 300 µs; δ ≤
0.02; Tamb = 25 °C; pulsed
-
VCEsat
RCEsat
VBEsat
VBEon
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
90
150
330
150
110
1
mV
mV
mΩ
mΩ
V
IC = 3 A; IB = 300 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
225
90
collector-emitter
saturation resistance
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
IC = 3 A; IB = 300 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
75
base-emitter saturation IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
voltage
-
0.86
1
pulsed; δ ≤ 0.02; Tamb = 25 °C
IC = 2 A; IB = 200 mA; tp ≤ 300 µs;
pulsed; δ ≤ 0.02; Tamb = 25 °C
-
1.2
0.85
V
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.1 A; Tamb = 25 °C
-
0.67
V
td
tr
delay time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
IBoff = -0.05 A; Tamb = 25 °C
-
-
-
-
-
-
-
20
-
-
-
-
-
-
-
ns
rise time
300
320
830
470
1300
140
ns
ton
ts
turn-on time
storage time
fall time
ns
ns
tf
ns
toff
fT
turn-off time
transition frequency
ns
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
11
-
pF
©
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
5 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
aaa-010261
aaa-010267
400
3
I
= 50 mA
45
B
h
FE
(1)
(2)
I
C
40
35
(A)
300
200
100
0
30
15
2
1
0
25
10
20
5
(3)
-1
2
3
4
10
1
10
10
10
10
(mA)
0
1
2
3
4
5
I
C
V
(V)
CE
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
Fig. 4. DC current gain as a function of collector
current; typical values
aaa-010262
aaa-010265
1.4
1.2
V
BE
(V)
1.2
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
(1)
(1)
(2)
(3)
(2)
(3)
-1
10
2
3
4
-1
10
2
3
4
1
10
10
10
10
(mA)
1
10
10
10
10
I (mA)
C
I
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6. Base-emitter voltage as a function of collector Fig. 7. Base-emitter saturation voltage as a function of
current; typical values
collector current; typical values
©
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
6 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
aaa-010263
aaa-010264
10
10
V
V
CEsat
(V)
CEsat
(V)
1
1
(1)
(1)
(2)
(3)
(2)
(3)
-1
-2
-3
-1
-2
-3
10
10
10
10
10
10
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-010266
aaa-010268
3
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
2
10
10
10
10
(1)
(1)
1
1
(1)
(2)
(3)
-1
-1
10
10
10
10
(3)
-2
-2
-1
2
3
4
-1
2
3
4
10
1
10
10
10
10
(mA)
10
1
10
10
10
10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) IC/IB = 50
(2) IC/IB = 20
(3) IC/IB = 10
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
7 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 12. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
oscilloscope
450 Ω
oscilloscope
R2
V
DUT
I
R1
mlb826
Fig. 13. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
8 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
9 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
10 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
15-04-13
Issue date
15-04-16
sot669_fw
Fig. 16. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
11 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
14. Revision history
Table 8. Revision history
Data sheet ID
PHPT61003NY v.5
Modifications:
Release date
20200910
Data sheet status
Change notice
Supersedes
Product data sheet
-
PHPT61003NY v.4
•
Characteristics: Figures 6, 7, 8 and 10 corrected
PHPT61003NY v.4
PHPT61003NY v.3
PHPT61003NY v.2
PHPT61003NY v.1
20150911
20140113
20140109
20131213
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
-
-
PHPT61003NY v.3
PHPT61003NY v.2
PHPT61003NY v.1
©
PHPT61003NY
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Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
12 / 14
Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
equipment, nor in applications where failure or malfunction of an Nexperia
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severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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Characteristics sections of this document is not warranted. Constant or
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©
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
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Nexperia
PHPT61003NY
100 V, 3 A NPN high power bipolar transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2020. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 September 2020
©
PHPT61003NY
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2020. All rights reserved
Product data sheet
10 September 2020
14 / 14
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