PMBD353 [NEXPERIA]

Schottky barrier double diodeProduction;
PMBD353
型号: PMBD353
厂家: Nexperia    Nexperia
描述:

Schottky barrier double diodeProduction

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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
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use http://www.nexperia.com  
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
ook, halfpage  
PMBD353  
Schottky barrier double diode  
Product data sheet  
2001 Oct 15  
Supersedes data of 1999 May 25  
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
PMBD353  
FEATURES  
MARKING  
PINNING  
Low forward voltage  
Small SMD package  
Low capacitance.  
MARKING  
CODE(1)  
PIN  
1
DESCRIPTION  
TYPE NUMBER  
cathode k1  
PMBD353  
4F  
2
anode a2  
3
common connection a1, k2  
Note  
APPLICATIONS  
1. = p: Made in Hong Kong.  
= t: Made in Malaysia.  
= W: Made in China.  
UHF mixer  
Sampling circuits  
Modulators  
Phase detection.  
3
DESCRIPTION  
3
Planar Schottky barrier double diode  
in a SOT23 small plastic SMD  
package.  
1
2
MGC487  
1
2
Top view  
MGC421  
Fig.1 Simplified outline (SOT23) pin configuration and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
MIN.  
MAX.  
UNIT  
Per diode  
VR  
IF  
continuous reverse voltage  
4
V
continuous forward current  
storage temperature  
30  
mA  
°C  
°C  
Tstg  
Tj  
65  
+150  
100  
junction temperature  
2001 Oct 15  
2
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
PMBD353  
ELECTRICAL CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
see Fig.2  
IF = 0.1 mA  
350  
mV  
IF = 1 mA  
450  
600  
0.25  
1
mV  
mV  
μA  
pF  
IF = 10 mA  
IR  
reverse current  
VR = 3 V; note 1; see Fig.3  
f = 1 MHz; VR = 0; see Fig.4  
Cd  
diode capacitance  
Note  
1. Pulse test: tp = 300 μs; δ = 0.02.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-a  
500  
Note  
1. Refer to SOT23 standard mounting conditions.  
2001 Oct 15  
3
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
PMBD353  
GRAPHICAL DATA  
MLC795  
MLC796  
4
2
10  
10  
handbook, halfpage  
handbook, halfpage  
I
R
(nA)  
I
F
(mA)  
3
(1)  
10  
10  
(2)  
(3)  
2
10  
(1)  
(2)  
(3)  
(4)  
1
10  
1
1  
10  
(4)  
2  
10  
1
10  
0
200  
400  
600  
800  
0
1
2
3
V
(V)  
R
V
(mV)  
F
(1) Tamb = 100 °C.  
(2) Tamb = 60 °C.  
(3) Tamb = 25 °C.  
(4) Tamb = 40 °C.  
(1) Tamb = 100 °C.  
(2)  
Tamb = 60 °C.  
(3) Tamb = 25 °C.  
(4) Tamb = 40 °C.  
Fig.2 Forward current as a function of forward  
voltage; typical values.  
Fig.3 Reverse current as a function of reverse  
voltage; typical values.  
MLC797  
0.8  
handbook, halfpage  
C
d
(pF)  
0.7  
0.6  
0.5  
0.4  
0
1
2
3
4
(V)  
V
R
f = 1 MHz; Tamb = 25 °C.  
Fig.4 Diode capacitance as a function of reverse  
voltage; typical values.  
2001 Oct 15  
4
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
PMBD353  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
2001 Oct 15  
5
NXP Semiconductors  
Product data sheet  
Schottky barrier double diode  
PMBD353  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2001 Oct 15  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/04/pp7  
Date of release: 2001 Oct 15  
Document order number: 9397 750 08769  

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