PMBT2222A-Q [NEXPERIA]
NPN switching transistorProduction;型号: | PMBT2222A-Q |
厂家: | Nexperia |
描述: | NPN switching transistorProduction |
文件: | 总11页 (文件大小:206K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMBT2222A-Q
NPN switching transistor
6 February 2023
Product data sheet
1. General description
NPN switching transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.
PNP complement: PMBT2907A-Q
2. Features and benefits
•
High current (max. 600 mA)
•
•
Low voltage (max. 40 V)
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
Switching and linear amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
40
V
IC
collector current
DC current gain
-
-
-
600
-
mA
hFE
VCE = 10 V; IC = 0.1 mA; Tamb = 25 °C
35
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
base
Simplified outline
Graphic symbol
3
B
E
C
C
2
emitter
B
3
collector
E
1
2
sym021
SOT23
Nexperia
PMBT2222A-Q
NPN switching transistor
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMBT2222A-Q
SOT23
plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
%1P
PMBT2222A-Q
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
Min
Max
Unit
V
collector-base voltage
open emitter
-
75
collector-emitter voltage open base
-
40
V
emitter-base voltage
collector current
open collector
-
6
V
-
600
800
200
250
150
150
150
mA
mA
mA
mW
°C
ICM
peak collector current
peak base current
-
IBM
-
Ptot
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
[1]
-
Tj
-
Tamb
Tstg
-65
-65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCM), single-sided copper, tin-plated and standard footprint.
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
2 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
-
-
500
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
aaa-032091
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.33
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
3 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
10
Unit
nA
ICBO
collector-base cut-off
current
VCB = 60 V; IE = 0 A; Tamb = 25 °C
VCB = 60 V; IE = 0 A; Tj = 125 °C
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
-
-
-
-
10
µA
IEBO
hFE
emitter-base cut-off
current
10
nA
DC current gain
VCE = 10 V; IC = 0.1 mA; Tamb = 25 °C
VCE = 10 V; IC = 1 mA; Tamb = 25 °C
VCE = 10 V; IC = 10 mA; Tamb = 25 °C
VCE = 10 V; IC = 10 mA; Tamb = -55 °C
VCE = 10 V; IC = 150 mA; Tamb = 25 °C [1]
35
50
75
35
100
50
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
VCE = 1 V; IC = 150 mA; Tamb = 25 °C
[1]
VCE = 10 V; IC = 500 mA; Tamb = 25 °C [1]
IC = 150 mA; IB = 15 mA; Tamb = 25 °C [1]
IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]
-
VCEsat
collector-emitter
saturation voltage
300
1
mV
V
-
VBEsat
base-emitter saturation IC = 150 mA; IB = 15 mA; Tamb = 25 °C [1]
voltage
0.6
-
1.2
2
V
IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]
V
td
delay time
IC = 150 mA; IBon = 15 mA;
IBoff = -15 mA; Tamb = 25 °C
-
15
20
35
200
60
250
8
ns
ns
ns
ns
ns
ns
pF
tr
rise time
-
ton
ts
turn-on time
storage time
fall time
-
-
tf
-
toff
Cc
turn-off time
collector capacitance
-
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
Ce
fT
emitter capacitance
transition frequency
noise figure
VEB = 500 mV; IC = 0 A; ic = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
-
-
25
-
pF
VCE = 20 V; IC = 20 mA; f = 100 MHz;
Tamb = 25 °C
300
-
MHz
dB
NF
VCE = 5 V; IC = 100 µA; RS = 1 kΩ;
f = 1 kHz; Tamb = 25 °C
4
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
4 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
aaa-032061
aaa-032062
1000
1.0
h
FE
V
BE
(V)
(1)
800
0.8
(2)
(3)
600
400
200
0
0.6
0.4
0.2
(1)
(2)
(3)
-1
10
2
3
-1
10
2
3
1
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 10 V
VCE = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig. 2. DC current gain as a function of collector
current; typical values
Fig. 3. Base-emitter voltage as a function of collector
current; typical values
aaa-032063
aaa-032064
1.2
1
V
BEsat
(V)
1.0
V
CEsat
(V)
(1)
(2)
(1)
(2)
(3)
0.8
0.6
0.4
0.2
-1
10
(3)
-2
10
-1
10
2
3
-1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 10
(1) Tamb = -55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = -55 °C
Fig. 4. Base-emitter saturation voltage as a function of Fig. 5. Collector-emitter saturation voltage as a
collector current; typical values
function of collector current; typical values
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
5 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
11. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig. 6. Switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
R2
V
I
DUT
R1
mlb826
Fig. 7. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
6 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 8. Package outline SOT23
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 9. Reflow soldering footprint for SOT23
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
7 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 10. Wave soldering footprint for SOT23
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
8 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20230206
Data sheet status
Change notice Supersedes
PMBT2222A-Q v.1
Product data sheet
-
-
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
9 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
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15. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
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Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
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warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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has been qualified for use in automotive applications. Unless otherwise
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©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
10 / 11
Nexperia
PMBT2222A-Q
NPN switching transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................1
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................9
15. Legal information......................................................10
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 6 February 2023
©
PMBT2222A-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
11 / 11
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