PMBT3904RA [NEXPERIA]

40 V, 200 mA double NPN switching transistorProduction;
PMBT3904RA
型号: PMBT3904RA
厂家: Nexperia    Nexperia
描述:

40 V, 200 mA double NPN switching transistorProduction

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PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
13 September 2018  
Product data sheet  
1. General description  
Double NPN switching transistor in an ultra small DFN1412-6 (SOT1268) leadless Surface-  
Mounted Device (SMD) plastic package.  
2. Features and benefits  
Leadless ultra small SMD plastic package  
Reduces component count  
Reduces pick and place costs  
Low package height of 0.5 mm  
3. Applications  
General-purpose switching and amplification  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO  
collector-emitter  
voltage  
open base  
-
-
40  
V
IC  
collector current  
DC current gain  
-
-
200  
300  
mA  
hFE  
VCE = 1 V; IC = 10 mA  
100  
180  
 
 
 
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
C1  
B2 E2  
E1  
B1  
C2  
E2  
B2  
C1  
C1  
C2  
emitter TR1  
base TR1  
1
2
6
5
4
2
7
8
TR2  
3
collector TR2  
emitter TR2  
base TR2  
TR1  
E1  
4
B1 C2  
sym020  
5
3
6
collector TR1  
collector TR1  
collector TR2  
Transparent top view  
7
DFN1412-6  
(SOT1268)  
8
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMBT3904RA  
DFN1412-6  
plastic, thermal enhanced ultra thin small outline package; no  
leads; 6 terminals; 1.4 mm x 1.2 mm x 0.47 mm body  
SOT1268  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
PMBT3904RA  
C6  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
2 / 13  
 
 
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
open emitter  
-
-
-
-
-
-
-
60  
V
collector-emitter voltage open base  
40  
V
emitter-base voltage  
collector current  
open collector  
6
V
200  
200  
100  
325  
mA  
mA  
mA  
mW  
ICM  
peak collector current  
peak base current  
total power dissipation  
single pulse; tp ≤ 1 ms  
Tamb ≤ 25 °C  
IBM  
Ptot  
[1]  
[1]  
Per device  
Ptot  
total power dissipation  
junction temperature  
ambient temperature  
storage temperature  
Tamb ≤ 25 °C  
-
480  
150  
150  
150  
mW  
°C  
Tj  
-
Tamb  
Tstg  
-55  
-65  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
aaa-024487  
500  
P
tot  
(mW)  
400  
300  
200  
100  
0
-75  
-25  
25  
75  
125  
amb  
175  
(°C)  
T
FR4 PCB, standard footprint  
Fig. 1. Per device: Power derating curve  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
3 / 13  
 
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
[1]  
-
-
385  
K/W  
Per device  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
-
-
261  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
aaa-024488  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.5  
0.33  
0.2  
2
10  
0.1  
0.05  
0.01  
0.02  
10  
0
1
-5  
10  
-4  
-3  
-2  
10  
-1  
2
3
10  
10  
10  
1
10  
10  
10  
t
(s)  
p
FR4 PCB, standard footprint  
Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;  
typical values  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
4 / 13  
 
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
10. Characteristics  
Table 7. Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
V(BR)CBO  
collector-base  
breakdown voltage  
IC = 100 µA; IE = 0 A  
IC = 1 mA; IB = 0 A  
IC = 0 A; IE = 100 µA  
VCB = 30 V; IE = 0 A  
VEB = 6 V; IC = 0 A  
60  
40  
6
-
-
-
-
-
-
V
V(BR)CEO  
V(BR)EBO  
ICBO  
collector-emitter  
breakdown voltage  
-
V
emitter-base  
breakdown voltage  
-
V
collector-base cut-off  
current  
-
50  
50  
nA  
nA  
IEBO  
emitter-base cut-off  
current  
-
hFE  
DC current gain  
VCE = 1 V; IC = 100 µA  
VCE = 1 V; IC = 1 mA  
VCE = 1 V; IC = 10 mA  
VCE = 1 V; IC = 50 mA  
60  
80  
100  
60  
30  
180  
180  
180  
105  
50  
-
-
300  
-
-
VCE = 1 V; IC = 100 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02  
VCEsat  
collector-emitter  
saturation voltage  
IC = 10 mA; IB = 1 mA  
IC = 50 mA; IB = 5 mA  
-
75  
200  
300  
850  
950  
35  
35  
70  
200  
50  
250  
4
mV  
mV  
mV  
mV  
ns  
-
120  
VBEsat  
base-emitter saturation IC = 10 mA; IB = 1 mA  
voltage  
650  
750  
IC = 50 mA; IB = 5 mA  
-
850  
td  
delay time  
IC = 10 mA; IBon = 1 mA; IBoff = -1 mA  
-
-
-
-
-
-
-
-
-
-
tr  
rise time  
-
ns  
ton  
ts  
turn-on time  
-
ns  
storage time  
-
ns  
tf  
fall time  
-
ns  
toff  
Cc  
Ce  
fT  
turn-off time  
-
ns  
collector capacitance  
emitter capacitance  
transition frequency  
VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz  
VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz  
VCE = 20 V; IC = 10 mA; f = 100 MHz  
-
pF  
-
8
pF  
300  
-
MHz  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
5 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
aaa-028741  
006aab116  
300  
0.20  
I
(mA) = 5.0  
B
4.5  
3.5  
2.5  
I
C
h
FE  
(A)  
4.0  
3.0  
(1)  
(2)  
0.15  
200  
2.0  
1.0  
1.5  
0.10  
0.05  
0.0  
0.5  
(3)  
100  
0
-1  
10  
2
3
1
10  
10  
10  
0
2
4
6
8
10  
I
(mA)  
V
(V)  
CE  
C
VCE = 1 V  
Tamb = 25 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 4. Collector current as a function of collector-  
emitter voltage; typical values  
Fig. 3. DC current gain as a function of collector  
current; typical values  
006aab117  
006aab118  
1.2  
1.3  
V
BE  
(V)  
V
BEsat  
(V)  
(1)  
(2)  
(1)  
(2)  
0.8  
0.9  
0.5  
0.1  
(3)  
(3)  
0.4  
0
10  
- 1  
2
3
- 1  
2
3
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 1 V  
IC/IB = 10  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
(1) Tamb = −55 °C  
(2) Tamb = 25 °C  
(3) Tamb = 150 °C  
Fig. 5. Base-emitter voltage as a function of collector Fig. 6. Base-emitter saturation voltage as a function of  
current; typical values  
collector current; typical values  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
6 / 13  
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
006aab119  
1
V
CEsat  
(V)  
(1)  
(3)  
(2)  
- 1  
10  
- 2  
10  
- 1  
2
3
10  
1
10  
10  
10  
I
(mA)  
C
IC/IB = 10  
(1) Tamb = 150 °C  
(2) Tamb = 25 °C  
(3) Tamb = −55 °C  
Fig. 7. Collector-emitter saturation voltage as a function of collector current; typical values  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
7 / 13  
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
11. Test information  
I
B
input pulse  
90 %  
(idealized waveform)  
I
(100 %)  
Bon  
10 %  
I
Boff  
output pulse  
(idealized waveform)  
I
C
90 %  
I
(100 %)  
C
10 %  
t
t
t
f
t
t
r
s
d
t
t
off  
on  
006aaa003  
Fig. 8. Transistor switching time definition  
V
V
CC  
BB  
R
B
R
C
V
o
(probe)  
450 Ω  
(probe)  
oscilloscope  
450 Ω  
oscilloscope  
R2  
V
I
DUT  
R1  
mlb826  
Fig. 9. Test circuit for switching times  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
8 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
12. Package outline  
DFN1412-6: plastic thermal enhanced ultra thin small outline package; no leads;  
6 terminals; body: 1.4 x 1.2 x 0.47 mm  
SOT1268  
(2×)  
E
B
A
pin 1  
index area  
A
D
A
1
T
(6×)  
detail X  
C
Y
C
1
Y
E
L
1
(2×)  
(6×)  
4
5
3
2
e
e
e
e
1
b
(6×)  
1
D
1
(2×)  
1
6
V C  
A B  
pin 1  
X
index area  
0
1 mm  
scale  
L
Dimensions (mm are the original dimensions)  
(1)  
Unit  
A
A
b
D
D
1
E
E
e
e
T
V
Y
Y
1
1
1
1
min 0.44 0.00 0.15 1.35 0.43 1.15 0.32  
0.145 0.10  
0.20 1.40 0.48 1.20 0.37 0.5 0.35 0.195 0.16 0.1 0.05 0.05  
0.50 0.04 0.25 1.45 0.53 1.25 0.42 0.245 0.22  
nom  
max  
mm  
Note  
0.47  
1. Dimension A is including plating thickness.  
sot1268_po  
References  
Outline  
version  
IEC  
European  
projection  
Issue date  
JEDEC  
- - -  
JEITA  
18-08-23  
18-09-11  
SOT1268  
Fig. 10. Package outline DFN1412-6 (SOT1268)  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
9 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
13. Soldering  
Footprint information for reflow soldering of DFN1412-6 package  
SOT1268  
1.6  
1.4  
1.3  
0.3  
0.2  
0.25  
0.5  
0.3 0.35  
0.27 0.37  
1.71 1.51 1.41 0.71  
0.17  
0.43  
0.17  
1.23  
occupied area  
solder resist  
solder paste  
solder lands  
Dimensions in mm  
16-04-18  
16-09-02  
Issue date  
sot1268_fr  
Fig. 11. Reflow soldering footprint for DFN1412-6 (SOT1268)  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
10 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
Release date  
20180913  
Data sheet status  
Change notice  
Supersedes  
PMBT3904RA v.1  
Product data sheet  
-
-
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
11 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
15. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
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liability in this respect.  
[2] The term 'short data sheet' is explained in section "Definitions".  
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changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
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©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
12 / 13  
 
Nexperia  
PMBT3904RA  
40 V, 200 mA double NPN switching transistor  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Test information..........................................................8  
12. Package outline.......................................................... 9  
13. Soldering................................................................... 10  
14. Revision history........................................................11  
15. Legal information......................................................12  
© Nexperia B.V. 2018. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 13 September 2018  
©
PMBT3904RA  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2018. All rights reserved  
Product data sheet  
13 September 2018  
13 / 13  

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YAGEO

PMBT3904TRL13

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
YAGEO

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistor
NXP

PMBT3904VS

40 V, 200 mA NPN/NPN switching transistorProduction
NEXPERIA

PMBT3904VS,115

PMBT3904VS - 40 V, 200 mA NPN/NPN switching transistor SOT 6-Pin
NXP

PMBT3904YS

40 V, 200 mA NPN/NPN general-purpose double transistor
NXP

PMBT3904YS

40 V, 200 mA NPN/NPN general-purpose double transistorProduction
NEXPERIA

PMBT3904YS,115

PMBT3904YS - 40 V, 200 mA NPN/NPN general-purpose double transistor TSSOP 6-Pin
NXP

PMBT3904YS-Q

40 V, 200 mA NPN/NPN general-purpose double transistorProduction
NEXPERIA

PMBT3906

PNP switching transistor
NXP

PMBT3906

PNP switching transistorProduction
NEXPERIA