PMBT3906M [NEXPERIA]
40 V, 200 mA PNP switching transistorProduction;型号: | PMBT3906M |
厂家: | Nexperia |
描述: | 40 V, 200 mA PNP switching transistorProduction 开关 晶体管 |
文件: | 总12页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMBT3906M
40 V, 200 mA PNP switching transistor
Rev. 01 — 22 July 2009
Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
PNP single switching transistor in a SOT883 (SC-101) leadless ultra small
Surface-Mounted Device (SMD) plastic package.
NPN complement: PMBT3904M.
1.2 Features
I Single general-purpose switching transistor
I Board-space reduction
I AEC-Q101 qualified
I Ultra small SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
−40
Unit
V
VCEO
IC
collector-emitter voltage open base
collector current
-
-
-
-
−200
300
mA
hFE
DC current gain
VCE = −1 V;
IC = −10 mA
100
180
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
1
3
2
2
emitter
3
collector
1
Transparent
top view
2
sym013
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMBT3906M
SC-101
leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 × 0.6 × 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
PMBT3906M
Marking code
6Q
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
open emitter
open base
Min
Max
−40
−40
−6
Unit
V
VCBO
VCEO
VEBO
IC
collector-base voltage
-
-
-
-
-
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
−200
−200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
−100
mA
[1][2]
[1][3]
total power dissipation
Tamb ≤ 25 °C
-
260
mW
mW
°C
-
590
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
2 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
006aab602
800
tot
P
(mW)
(1)
600
400
200
0
(2)
−75
−25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT883 (SC-101)
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
481
212
K/W
K/W
[1][3]
[1] Reflow soldering is the only recommended soldering method.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
3 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
006aab603
3
10
duty cycle =
1
Z
th(j-a)
0.75
0.33
(K/W)
0.5
2
10
0.2
0.1
0.05
0.02
10
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = −30 V; IE = 0 A
Min
Typ
Max
Unit
ICBO
IEBO
hFE
-
-
−50
nA
current
emitter-base cut-off VEB = −6 V; IC = 0 A
current
-
-
−50
nA
DC current gain
VCE = −1 V
IC = −0.1 mA
60
180
-
IC = −1 mA
80
180
-
IC = −10 mA
100
180
300
-
IC = −50 mA
60
30
-
130
IC = −100 mA
50
-
VCEsat
collector-emitter
saturation voltage
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
IC = −10 mA; IB = −1 mA
IC = −50 mA; IB = −5 mA
−100
−250
−400
−850
−950
35
mV
mV
mV
mV
ns
-
−165
VBEsat
base-emitter
saturation voltage
-
−750
-
−850
td
delay time
rise time
VCC = −3 V;
IC = −10 mA;
Bon = −1 mA;
-
-
-
-
-
-
-
-
tr
-
35
ns
I
I
ton
ts
turn-on time
storage time
fall time
-
70
ns
Boff = 1 mA
-
225
75
ns
tf
-
ns
toff
Cc
turn-off time
-
300
4.5
ns
collector capacitance VCB = −5 V; IE = ie = 0 A;
-
pF
f = 1 MHz
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
4 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
emitter capacitance VEB = −500 mV;
IC = ic = 0 A; f = 1 MHz
transition frequency VCE = −20 V;
Min
Typ
Max
Unit
Ce
fT
-
-
10
pF
250
-
-
-
-
MHz
dB
IC = −10 mA;
f = 100 MHz
NF
noise figure
VCE = −5 V;
4
IC = −100 µA;RS = 1 kΩ;
f = 10 Hz to 15.7 kHz
006aab121
006aab120
−0.3
400
I
(mA) = −5.0
B
h
−4.5
−4.0
−3.5
−3.0
FE
(1)
I
C
(A)
−2.5
−2.0
300
200
100
0
−0.2
−1.5
−1.0
(2)
(3)
−0.1
−0.5
0
−1
2
3
0
−2
−4
−6
−8
V
−10
(V)
−10
−1
−10
−10
−10
I
(mA)
CE
C
VCE = −1 V
Tamb = 25 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
5 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
006aab123
006aab124
−1.2
−1.2
V
(V)
V
BE
BEsat
(V)
−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
(1)
(2)
(1)
(2)
−0.8
−0.6
−0.4
−0.2
(3)
(3)
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
VCE = −1 V
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
006aab122
−1
V
CEsat
(V)
(1)
−1
−10
(2)
(3)
−2
−10
−1
2
3
−10
−1
−10
−10
−10
I
(mA)
C
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
6 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
8. Test information
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
VI = 5 V; t = 600 µs; tp = 10 µs; tr = tf ≤ 3 ns
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω
VBB = 1.9 V; VCC = −3 V
Oscilloscope: input impedance Zi = 50 Ω
Fig 8. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
0.62
0.55
0.50
0.46
0.55
0.47
3
0.30
0.22
1.02
0.95
0.65
0.30
0.22
2
1
0.20
0.12
0.35
Dimensions in mm
03-04-03
Fig 9. Package outline SOT883 (SC-101)
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
7 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
10000
PMBT3906M SOT883 2 mm pitch, 8 mm tape and reel
-315
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
1.3
0.7
R0.05 (12×)
solder lands
solder resist
0.9
0.6 0.7
solder paste
occupied area
0.25
(2×)
0.3
(2×)
0.3
0.4
Dimensions in mm
0.4
(2×)
sot883_fr
Fig 10. Reflow soldering footprint SOT883 (SC-101)
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
8 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMBT3906M_1
20090722
Product data sheet
-
-
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
9 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBT3906M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 22 July 2009
10 of 11
PMBT3906M
NXP Semiconductors
40 V, 200 mA PNP switching transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 July 2009
Document identifier: PMBT3906M_1
相关型号:
PMBT3906MB
200mA, 40V, PNP, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, PLASTIC, LEADLESS, ULTRA SMALL, DFN1006B-3
NXP
©2020 ICPDF网 联系我们和版权申明