PMCM650CUNE [NEXPERIA]
20 V, Common Drain N-channel Trench MOSFETProduction;
| 型号： | PMCM650CUNE |
| 厂家： | 
Nexperia |
| 描述： | 20 V, Common Drain N-channel Trench MOSFETProduction |
| 文件： | 总18页 (文件大小：398K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMCM650CUNE
6
P
20 V, Common Drain N-channel Trench MOSFET
S
C
L
W
Rev. 1.0 — 8 November 2017
Product data sheet
1 Product profile
1.1 General description
N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6
bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
1.2 Features and benefits
• Common-drain type for bi-directional current flow
• Low threshold voltage
• Ultra small package: 0.98 × 1.48 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
1.3 Applications
• Loadswitch
• Battery Protection
• Battery Management
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
20
Unit
V
VSS
VGS
IS
source-source voltage
Tj = 25 °C
-
-
-
-
gate-source voltage
source current
-8
-
8
V
[1]
Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s
VGS = 4.5 V; IS = 3 A; Tj = 25 °C
5.3
A
Static characteristics
RSSon source-source on-state
-
40
52
mΩ
resistance
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
2 Pinning information
Table 2. Pinning
Pin
A1
A2
B1
B2
C1
C2
Symbol Description
Simplified outline
Graphic symbol
1
2
S1
S2
G1
S1
S2
S1
S2
G2
gate 1
source 1
source 2
source 1
source 2
gate 2
A
B
C
G1
G2
aaa-027241
Transparent top view
3 Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMCM650CUNE
WLCSP6
wafer level chip-size package; 6 bumps (3 x 2) WLCSP6_3-2
4 Marking
Table 4. Marking codes
Type number
Marking code
PMCM650CUNE
AH
PMCM650CUNE v.1
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Product data sheet
Rev. 1.0 — 8 November 2017
2 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
5 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VSS
Parameter
Conditions
Min
Max
20
Unit
V
source-source voltage
gate-source voltage
source current
Tj = 25 °C
-
VGS
Tj = 25 °C
−8
-
8
V
[1]
[1]
[1]
IS
Tamb = 25 °C; VGS = 4.5 V; t ≤ 5 s
Tamb = 25 °C; VGS = 4.5 V
Tamb = 100 °C; VGS = 4.5 V
5.3
4.1
2.6
16
A
-
A
-
A
ISM
Ptot
peak source current
Tamb = 25 °C; single pulse;
tp ≤ 10 μs
-
A
[2]
[1]
total power dissipation
Tamb = 25 °C
Tamb = 25 °C
Tsp = 25 °C
-
556
mW
mW
-
1300
-
12500 mW
Tj
junction temperature
ambient temperature
storage temperature
−55
−55
−65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-Forward diode
IFS source-forward current
[1]
Tamb = 25 °C
-
1.2
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
3 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Figure 1. Normalized total power dissipation as a
function of junction temperature
Figure 2. Normalized continuous source-source current
as a function of junction temperature
aaa-02754
2
10
I
S
(A)
Limit R
SSon
= V /I
SS
S
t
= 10 µs
p
10
100 µs
1 ms
1
DC; T = 25 °C
sp
10 ms
2
DC; T
= 25 °C; 6 cm
-1
amb
10
10
100 ms
-2
-1
10
2
1
10
10
V
(V)
SS
Figure 3. Safe operating area; junction to ambient; continuous and peak source currents as a function of source-
source voltage
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
4 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
6 Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
180
65
Max
225
85
Unit
K/W
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[3]
Rth(j-a)
thermal resistance from junction in free air
-
-
-
-
-
to ambient
75
95
in free air; t ≤ 5 s
45
55
Rth(j-sp)
thermal resistance from junction
to solder point
5
10
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain, 4 layer, 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-027259
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.2
0.1
0.05
0.01
0.02
0
10
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Figure 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
5 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
aaa-027260
2
10
duty cycle = 1
0.75
0.5
Z
th(j-a)
(K/W)
0.33
0.2
0.25
0.1
10
0.05
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Figure 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
6 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
7 Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristic
Conditions
Min
Typ
Max
Unit
V(BR)SS
source-source breakdown
voltage
IS = 250 μA; VGS = 0 V;
20
-
-
V
VGSth
ISSS
gate-source threshold voltage
source leakage current
gate leakage current
ID = 250 μA; VSS = VGS
VGS = 0 V; VSS = 20 V
0.4
0.7
-
0.9
1
V
-
-
-
-
-
-
-
-
-
-
-
-
-
μA
μA
μA
μA
μA
nA
nA
mΩ
mΩ
mΩ
mΩ
S
IGSS
VGS = 8 V; VSS = 0 V
-
10
−10
1
VGS = −8 V; VSS = 0 V
VGS = 4.5 V; VSS = 0 V
VGS = −4.5 V; VSS = 0 V
VGS = 2.5 V; VSS = 0 V
VGS = −2.5 V; VSS = 0 V
VGS = 4.5 V; IS = 3 A; Tj = 25 °C
VGS = 4.5 V; IS = 3 A; Tj = 150 °C
VGS = 2.5 V; IS = 2 A; Tj = 25 °C
VGS = 1.8 V; IS = 1 A; Tj = 25 °C
VGS = 4.5 V; IS = 3 A
-
-
-
−1
200
−200
52
71
62
95
-
-
-
RSSon
source-source on-state
resistance
40
55
50
63
22
6.6
gfs
forward transconductance
gate resistance
RG
f = 1 MHz
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
VSS = 10 V; IS = 3 A; VGS = 4.5 V
VSS = 10 V; f = 1 MHz; VGS = 0 V
-
-
-
-
-
-
-
-
-
-
9
13
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
0.7
2.9
480
96
96
6
-
-
-
-
VSS = 10 V; IS = 3 A;
VGS = 4.5 V; RG(ext) = 6 Ω
-
20
39
15
-
td(off)
tf
turn-off delay time
fall time
-
-
Source-Foward diode
VFS
source-forward voltage
VG1S1 = 0 V ; VG2S2 = 4.5 V;
IS = 1.2 A
-
0.7
1.2
V
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
7 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
aaa-027321
aaa-027322
-3
16
10
4.5 V
2.5 V
1.8 V
I
S
I
S
(A)
(A)
12
min
max
typ
1.5 V
1.4 V
-4
-5
-6
10
8
4
0
10
10
V
= 1.2 V
GS
0
1
2
3
4
0
0.5
1
1.5
V
(V)
V
(V)
GS
SS
Tj = 25 °C
VSS = 5 V; Tj = 25 °C
Figure 6. Output characteristics: source current as a
function of source-source voltage; typical values
Figure 7. Sub-threshold source current as a function of
gate-source voltage
aaa-027323
aaa-027325
120
200
R
SSon
1.5 V
1.6 V
1.8 V
R
SSon
100
150
80
60
40
20
0
2.2 V
2.5 V
100
50
0
V
= 4.5 V
GS
T = 150 °C
j
25 °C
0
4
8
12
16
0
1
2
3
4
5
I
(A)
V
(V)
GS
S
Tj = 25 °C
IS = 3 A
Figure 8. Source-source on-state resistance as a
function of source current; typical values
Figure 9. Source-source on-state resistance as a
function of gate-source voltage; typical values
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
8 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
aaa-027326
aaa-027327
16
1.6
T = 25 °C
j
150 °C
I
a
S
(A)
12
1.2
8
4
0
0.8
0.4
0
150 °C
T = 25 °C
j
0
0.5
1
1.5
2
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VSS > IS x RSSon
Figure 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Figure 11. Normalized source-source on-state resistance
as a function of junction temperature; typical values
aaa-027329
aaa-027627
3
1.5
10
C
iss
V
GS(th)
(V)
C
(pF)
1
0.5
0
max
typ
C
C
2
oss
10
rss
min
10
10
-1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
SS
IS = 250 μA; VSS = VGS
f = 1 MHz; VGS = 0 V
Figure 13. Input, output and reverse transfer
capacitances as a function of source-source voltage;
typical values
Figure 12. Gate-source threshold voltage as a function
of junction temperature
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
9 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
aaa-027330
5
V
SS
V
GS
(V)
I
S
4
3
2
1
0
V
V
GS(pl)
GS(th)
V
GS
Q
Q
G1S1
G1S2
G(tot)
Q
aaa-027243
Figure 15. Common Drain MOSFET gate charge
definitions
0
2
4
6
8
10
(nC)
Q
G
VSS = 10 V; IS = 3 A; Tamb = 25 °C
Figure 14. Gate-source voltage as a function of gate
charge; typical values
aaa-027331
1.2
I
S
(A)
0.8
T = 150 °C
j
T = 25 °C
j
0.4
0
0
0.4
0.8
1.2
V
(V)
S1S2
VG1S1 = 0 V; VG2S2 = 4.5 V
Figure 16. Source current as a function of source-source voltage; typical values
8 Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Figure 17. Duty cycle definition
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
10 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
V
/I
SS
I
S
GSS
S2
S2
A
G2
G1
G2
G1
V
SS
A
V
GS
S1
S2
S1
S2
V
R
SSon
GS(th)
I
A
S
G2
G1
G2
G1
V
V
GS
V
SS
V
GS
S1
S1
t
, t , t
, t
d(off)
Q
V
/I
d(on)
r
f
G(tot)
G2
FSS FSS
S2
S2
S2
V
G2S2
I
S
A
R
L
G2
G1
G2
R
L
V
V
I
= 1 mA
G
V
= 0 V
GS
G1
G1
R
G(ext)
V
V
SS
SS
PG
PG
S1
S1
S1
aaa-027255
Figure 18. Test circuits
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
11 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
9 Package outline
WLCSP6: wafer level chip-size package; 6 bumps (3 x 2)
WLCSP6_3-2
A
B
E
D
A
2
A
A
1
ball A1
index area
detail X
C
ball A1
index area
y
y
C
1
1
2
e
2
A
B
C
v
w
C
C
A B
b
e
X
e
1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
max 0.375 0.215 0.160 0.275 1.51 1.01
A
A
A
b
D
E
e
e
e
2
v
w
y
1
2
1
nom
min
mm
0.345 0.200 0.145 0.260 1.48 0.98 0.50 1.00 0.50 0.15 0.05 0.05
0.315 0.185 0.130 0.245 1.45 0.95
Note
Device back is metal coated on Drain potential.
wlcsp6_3-2_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
17-04-26
17-05-03
WLCSP6_3-2
Figure 19. Package outline WLCSP6_3-2
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
12 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
10 Soldering
Footprint information for reflow soldering
WLCSP6_3-2
0.15
0.35
0.25
0.5
0.25 1.2
solder resist
solder paste = solderland
0.5
occupied area
1.7
Dimensions in mm
wlcsp6_3-2_fr
Reflow soldering is the only recommended soldering method.
Dimensions in mm.
Figure 20. Reflow soldering footprint WLCSP6
PMCM650CUNE v.1
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Product data sheet
Rev. 1.0 — 8 November 2017
13 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
11 Revision history
Table 8. Revision history
Document ID
Release date
Data sheet status Change notice Supersedes
PMCM650CUNE v.1
20171108
Product data sheet
-
-
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
14 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
12 Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Product [short] data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nexperia.com.
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
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injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
Draft — The document is a draft version only. The content is still under
such equipment or applications and therefore such inclusion and/or use is at
internal review and subject to formal approval, which may result in
the customer’s own risk.
modifications or additions. Nexperia does not give any representations or
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
Short data sheet — A short data sheet is an extract from a full data sheet
without further testing or modification. Customers are responsible for the
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design and operation of their applications and products using Nexperia
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detailed and full information. For detailed and full information see the
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customer’s applications and products planned, as well as for the planned
the full data sheet shall prevail.
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Nexperia and its customer, unless Nexperia and customer have explicitly
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valid in which the Nexperia product is deemed to offer functions and qualities
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applications and the products or of the application or use by customer’s third
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12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Limited warranty and liability — Information in this document is believed
damage to the device. Limiting values are stress ratings only and (proper)
to be accurate and reliable. However, Nexperia does not give any
operation of the device at these or any other conditions above those
representations or warranties, expressed or implied, as to the accuracy
given in the Recommended operating conditions section (if present) or the
or completeness of such information and shall have no liability for the
Characteristics sections of this document is not warranted. Constant or
consequences of use of such information. Nexperia takes no responsibility
repeated exposure to limiting values will permanently and irreversibly affect
for the content in this document if provided by an information source outside
the quality and reliability of the device.
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customer.
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authorization from competent authorities.
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
PMCM650CUNE v.1
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Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified, the
product is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications. In the event that customer
uses the product for design-in and use in automotive applications to
automotive specifications and standards, customer (a) shall use the product
without Nexperia's warranty of the product for such automotive applications,
use and specifications, and (b) whenever customer uses the product for
automotive applications beyond Nexperia's specifications such use shall be
solely at customer’s own risk, and (c) customer fully indemnifies Nexperia
for any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond Nexperia's
standard warranty and Nexperia's product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
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Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
Tables
Tab. 1.
Tab. 2.
Tab. 3.
Tab. 4.
Quick reference data .........................................1
Tab. 5.
Limiting values .................................................. 3
Thermal characteristics ..................................... 5
Characteristics ...................................................7
Revision history ...............................................14
Pinning ...............................................................2
Ordering information ..........................................2
Marking codes ...................................................2
Tab. 6.
Tab. 7.
Tab. 8.
Figures
Fig. 1.
Fig. 2.
Fig. 3.
Normalized total power dissipation as a
function of junction temperature ........................4
Normalized continuous source-source
Fig. 10. Transfer characteristics: drain current as
a function of gate-source voltage; typical
values ................................................................ 9
current as a function of junction temperature .... 4
Safe operating area; junction to ambient;
continuous and peak source currents as a
function of source-source voltage ..................... 4
Transient thermal impedance from junction
to ambient as a function of pulse duration;
typical values .....................................................5
Transient thermal impedance from junction
to ambient as a function of pulse duration;
typical values .....................................................6
Output characteristics: source current as a
function of source-source voltage; typical
values ................................................................ 8
Sub-threshold source current as a function
of gate-source voltage ...................................... 8
Source-source on-state resistance as a
function of source current; typical values .......... 8
Source-source on-state resistance as a
function of gate-source voltage; typical
values ................................................................ 8
Fig. 11. Normalized
resistance as
source-source
on-state
a
function of junction
temperature; typical values ............................... 9
Fig. 12. Gate-source threshold voltage as a function
of junction temperature ..................................... 9
Fig. 13. Input, output and reverse transfer
capacitances as a function of source-source
voltage; typical values .......................................9
Fig. 14. Gate-source voltage as a function of gate
charge; typical values ......................................10
Fig. 15. Common Drain MOSFET gate charge
definitions ........................................................ 10
Fig. 16. Source current as a function of source-
source voltage; typical values ......................... 10
Fig. 17. Duty cycle definition ........................................ 10
Fig. 18. Test circuits .....................................................11
Fig. 19. Package outline WLCSP6_3-2 ........................12
Fig. 20. Reflow soldering footprint WLCSP6 ................ 13
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
PMCM650CUNE v.1
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© Nexperia B.V. 2017. All rights reserved.
Product data sheet
Rev. 1.0 — 8 November 2017
17 / 18
Nexperia
PMCM650CUNE
20 V, Common Drain N-channel Trench MOSFET
Contents
1
Product profile .................................................... 1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
General description ............................................1
Features and benefits ........................................1
Applications ........................................................1
Quick reference data ......................................... 1
Pinning information ............................................ 2
Ordering information .......................................... 2
Marking .................................................................2
Limiting values ....................................................3
Thermal characteristics ......................................5
Characteristics .................................................... 7
Test information ................................................10
Package outline .................................................12
Soldering ............................................................13
Revision history ................................................ 14
Legal information ..............................................15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© Nexperia B.V. 2017.
All rights reserved.
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 8 November 2017
Document identifier: PMCM650CUNE v.1
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