PMEG200G20ELP-Q [NEXPERIA]
200 V, 2 A Silicon Germanium (SiGe) rectifierProduction;
| 型号： | PMEG200G20ELP-Q |
| 厂家： | 
Nexperia |
| 描述： | 200 V, 2 A Silicon Germanium (SiGe) rectifierProduction |
| 文件： | 总14页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
17 May 2021
Product data sheet
1. General description
Silicon Germanium (SiGe) rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-
Mounted Device (SMD) plastic package.
2. Features and benefits
Features
Benefits
•
•
•
•
•
•
Low forward voltage and low Qrr
Extremely low leakage current
Thermal stability up to 175 °C junction temperature
Fast and smooth switching
Low parasitic capacitance
•
•
•
Excellent efficiency
Extraordinary safe operating area
Minimal impact on Electro-Magnetic Compatibility (EMC)
allowing simplified certification
Qualified according to AEC-Q101 and recommended for
use in automotive applications
3. Applications
•
High-efficiency power conversion
•
•
•
•
Automotive LED lighting
Engine control unit
Server power supply
Base station power supply
•
•
Reverse polarity protection
OR-ing
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward
current
δ = 0.5; f = 20 kHz; square wave; Tsp
160 °C
≤
-
-
2
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
Tj = 25 °C
-
-
-
-
-
200
880
30
V
IF = 2 A; Tj = 25 °C; pulsed
VR = 200 V; Tj = 25 °C; pulsed
VR = 200 V; Tj = 150 °C; pulsed
[1]
[1]
[1]
805
0.5
30
mV
nA
µA
300
[1] Very short pulse, in order to maintain a stable junction temperature.
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
cathode
Simplified outline
Graphic symbol
K
A
1
2
A
K
2
anode
006aab040
CFP5 (SOD128)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMEG200G20ELP-Q
CFP5
plastic, surface mounted package; 2 terminals; 4 mm pitch; SOD128
3.8 mm x 2.6 mm x 1 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
EC
PMEG200G20ELP-Q
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Attention: Stress above one of these maximum
values may cause irreversible damage to the device.
Symbol
VR
Parameter
Conditions
Min
Max
200
2.8
2
Unit
V
reverse voltage
forward current
Tj = 25 °C
-
-
-
IF
δ = 1; Tsp ≤ 155 °C
A
IF(AV)
average forward current δ = 0.5; f = 20 kHz; square wave; Tsp
160 °C
≤
A
IFSM
Ptot
non-repetitive peak
forward current
tp = 8.3 ms; half sine wave; Tj(init) = 25 °C
-
75
A
total power dissipation
Tamb ≤ 25 °C
[1]
[2]
-
0.75
1.2
W
-
W
Tj
junction temperature
ambient temperature
storage temperature
-
175
175
175
°C
°C
°C
Tamb
Tstg
-55
-65
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
©
PMEG200G20ELP-Q
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Product data sheet
17 May 2021
2 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
200
120
12
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[3]
-
-
-
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
aaa-031271
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.25
0.10
10
0.05
0.01
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-031272
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.50
0.33
0.20
0.25
0.10
10
0.05
0.01
0.02
0
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMEG200G20ELP-Q
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Product data sheet
17 May 2021
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Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1 mA; pulsed; Tj = 25 °C
[1]
200
-
-
V
VF
forward voltage
IF = 0.1 A; Tj = 25 °C; pulsed
IF = 0.5 A; Tj = 25 °C; pulsed
IF = 1 A; Tj = 25 °C; pulsed
IF = 2 A; Tj = 25 °C; pulsed
IF = 2 A; Tj = -40 °C; pulsed
IF = 2 A; Tj = 125 °C; pulsed
VR = 200 V; Tj = 25 °C; pulsed
VR = 200 V; Tj = 125 °C; pulsed
VR = 200 V; Tj = 150 °C; pulsed
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
-
-
-
-
-
-
-
-
-
-
-
-
620
710
760
805
890
660
0.5
5
700
790
840
880
980
760
30
mV
mV
mV
mV
mV
mV
nA
µA
µA
pF
IR
reverse current
50
30
300
-
Cd
trr
diode capacitance
58
23
-
pF
reverse recovery time IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
step recovery Tj = 25 °C
15
-
ns
reverse recovery time dIF/dt = 100 A/µs; IF = 1 A; VR = 30 V;
-
-
-
-
32
1
-
-
-
-
ns
A
ramp recovery
Tj = 25 °C
IRM
peak reverse recovery
current
Qrr
reverse recovery
charge
19
795
nC
mV
VFRM
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
[1] Very short pulse, in order to maintain a stable junction temperature.
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
4 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
aaa-030893
aaa-030894
-3
10
10
10
10
10
10
10
10
I
R
I
F
(A)
-4
-5
-6
-7
-8
-9
(A)
(1)
(2)
1
(3)
-1
10
10
10
10
(4)
-2
-3
-4
(2)
(4)
(6)
(1) (3)
(5)
(5)
-10
10
10
-11
0
0.4
0.8
1.2
0
25
50
100
150
200
V
(V)
V (V)
R
F
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = -40 °C
pulsed condition
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
Fig. 4. Reverse current as a function of reverse
voltage; typical values
Fig. 3. Forward current as a function of forward
voltage; typical values
aaa-030895
aaa-031273
100
2.0
C
d
(pF)
(4)
P
F(AV)
(W)
80
1.5
(3)
60
40
20
0
(2)
1.0
0.5
0
(1)
0
40
80
120
160
200
0
1
2
3
V
(V)
I
(A)
F(AV)
R
f = 1 MHz; Tamb = 25 °C
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
Fig. 5. Diode capacitance as a function of reverse
voltage; typical values
(4) δ = 1; DC
Fig. 6. Average forward power dissipation as a
function of average forward current; typical
values
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
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Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
aaa-031274
aaa-031275
30
2.5
F(AV)
I
(A)
P
R(AV)
(mW)
(1)
2.0
(1)
(2)
(2)
(3)
20
1.5
(3)
(4)
1.0
0.5
0
10
(4)
0
0
50
100
150
200
0
50
100
150
200
(°C)
V
(V)
T
R
amb
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 7. Average reverse power dissipation as a
function of reverse voltage; typical values
Fig. 8. Average forward current as a function of
ambient temperature; typical values
aaa-031276
aaa-031277
3
3
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(1)
(2)
(2)
2
2
(3)
(4)
(3)
(4)
1
0
1
0
0
50
100
150
200
(°C)
0
50
100
150
200
T
T
sp
(°C)
amb
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
Tj = 175 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of solder
point temperature; typical values
Fig. 9. Average forward current as a function of
ambient temperature; typical values
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
6 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
aaa-031278
aaa-031279
250
250
V
V
R
R
(V)
(V)
200
200
150
100
50
150
100
50
0
0
0
50
100
150
200
0
50
100
150
200
T (°C)
j
T (°C)
j
FR4 PCB, standard footprint
Rth = 200 K/W
FR4 PCB, mounting pad for cathode 1 cm2
Rth = 120 K/W
Fig. 11. Derated maximum reverse voltage as a function Fig. 12. Derated maximum reverse voltage as a function
of junction temperature; typical values
of junction temperature; typical values
aaa-031280
250
V
R
(V)
200
150
100
50
0
0
50
100
150
200
T (°C)
j
Soldering point of cathode tab
Rth = 12 K/W
Fig. 13. Derated maximum reverse voltage as a function of junction temperature; typical values
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
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Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
11. Test information
I
F
I
R(meas)
time
I
R
006aad022
t
rr
Fig. 14. Reverse recovery definition; step recovery
dl
F
I
F
dt
t
rr
time
25 %
100 %
Q
rr
I
R
I
RM
003aac562
Fig. 15. Reverse recovery definition; ramp recovery
I
F
time
V
F
V
FRM
V
F
time
001aab912
Fig. 16. Forward recovery definition
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
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Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV)=IM×δ with IM defined as peak current
IRMS=IF(AV) at DC, and IRMS=IM×√δ
with IRMS defined as RMS current.
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
12. Package outline
2.7
2.3
1.1
0.9
0.6
0.3
1
5.0 4.0
4.4 3.6
2
1.9
1.6
0.22
0.10
Dimensions in mm
07-09-12
Fig. 18. Package outline CFP5 (SOD128)
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
9 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
13. Soldering
6.2
4.4
4.2
solder lands
solder resist
1.9 2.1
3.4 2.5
(2×) (2×)
solder paste
occupied area
Dimensions in mm
1.2
(2×)
1.4
(2×)
sod128_fr
Fig. 19. Reflow soldering footprint for CFP5 (SOD128)
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
10 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
Wave soldering footprint information
SOD128
10.2
5.8
2.3
4.2
5.7
4.35
(2×)
(2×)
3.5 (2×)
3.65 (2×)
occupied area
solder resist
solder lands
dummy track (solder resist and Cu free)
Dimensions in mm
17-06-06
Issue date
sod128_fw
17-06-07
Fig. 20. Wave soldering footprint for CFP5 (SOD128)
14. Mounting
This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST
61340-5, JESD625-A or equivalent standards.
©
PMEG200G20ELP-Q
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
11 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
15. Revision history
Table 8. Revision history
Data sheet ID
Release date
20210517
Data sheet status
Change notice
Supersedes
PMEG200G20ELP-Q
v.2
Product data sheet
-
PMEG200G20ELP-Q
v.1
Modifications:
•
Features and benefits: added recommendation for automotive applications
PMEG200G20ELP-Q
v.1
20210209 Product data sheet
-
-
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
12 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
16. Legal information
Data sheet status
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status Product
Definition
[1][2]
status [3]
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
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and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
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has been qualified for use in automotive applications. Unless otherwise
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be suitable for use in life support, life-critical or safety-critical systems or
©
PMEG200G20ELP-Q
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Nexperia B.V. 2021. All rights reserved
Product data sheet
17 May 2021
13 / 14
Nexperia
PMEG200G20ELP-Q
200 V, 2 A Silicon Germanium (SiGe) rectifier
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................4
11. Test information..........................................................8
12. Package outline.......................................................... 9
13. Soldering................................................................... 10
14. Mounting....................................................................11
15. Revision history........................................................12
16. Legal information......................................................13
© Nexperia B.V. 2021. All rights reserved
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Date of release: 17 May 2021
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Product data sheet
17 May 2021
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PMEG2010AEJ
20 V, 1 A very low V_F MEGA Schottky barrier rectifier in SOD323F packageProduction
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