PMEG3020EPA [NEXPERIA]
2 A low V_F MEGA Schottky barrier rectifierProduction;
| 型号： | PMEG3020EPA |
| 厂家： | 
Nexperia |
| 描述： | 2 A low V_F MEGA Schottky barrier rectifierProduction 功效 光电二极管 |
| 文件： | 总14页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PMEG3020EPA
2 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 15 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection. PMEG3020EPA is encapsulated in an ultra thin
SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium
power capability.
1.2 Features
Average forward current: IF(AV) ≤ 2 A
Reverse voltage: VR ≤ 30 V
Low forward voltage
Exposed heat sink (cathode pad) for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
AEC-Q101 qualified
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
Battery chargers for mobile equipment
1.4 Quick reference data
Table 1.
Quick reference data
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF(AV)
average forward current
square wave;
δ = 0.5;
f = 20 kHz
[1]
Tamb ≤ 65 °C
Tsp ≤ 140 °C
-
-
-
-
-
-
2
A
-
2
A
VR
VF
IR
reverse voltage
forward voltage
reverse current
-
30
V
IF = 2 A
410
435
470
2500
mV
μA
VR = 30 V
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
anode
Simplified outline
Graphic symbol
3
1, 2
3
2
anode
3
cathode
006aab624
1
2
Transparent top view
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMEG3020EPA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 × 2 × 0.65 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG3020EPA
A2
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VR
Parameter
Conditions
Min
Max
Unit
reverse voltage
average forward current
Tj = 25 °C
-
30
V
IF(AV)
square wave;
δ = 0.5;
f = 20 kHz
[1]
Tamb ≤ 65 °C
Tsp ≤ 140 °C
-
-
-
2
2
7
A
A
A
[2]
IFRM
IFSM
Ptot
repetitive peak forward
current
tp ≤ 1 ms;
δ ≤ 0.25
[2][3]
non-repetitive peak
forward current
square wave;
tp = 8 ms
-
17
A
[4][5]
[4][6]
[4][1]
total power dissipation
Tamb ≤ 25 °C
-
-
-
500
mW
mW
mW
960
1800
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
2 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tj
Parameter
Conditions
Min
-
Max
150
Unit
°C
junction temperature
ambient temperature
storage temperature
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Both anode pins connected.
[3] Tj = 25 °C prior to surge.
[4] Reflow soldering is the only recommended soldering method.
[5] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1][2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
250
130
70
K/W
K/W
K/W
K/W
[4]
[5]
[6]
Rth(j-sp)
thermal resistance from
junction to solder point
12
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[5] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[6] Soldering point of cathode tab.
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
3 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
006aab637
3
10
duty cycle =
1
Z
th(j-a)
(K/W)
0.75
0.5
2
10
0.33
0.2
0.25
0.1
0.05
0.01
0.02
0
10
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab638
3
10
Z
th(j-a)
(K/W)
duty cycle =
1
2
10
0.75
0.5
0.25
0.1
0.33
0.2
0.05
10
0
0.02
0.01
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
4 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
006aab639
2
10
duty cycle =
1
0.75
Z
th(j-a)
0.5
0.25
0.1
(K/W)
0.33
0.2
0.05
10
0
0.02
0.01
1
10
−3
−2
−1
2
3
10
10
1
10
10
10
t
p
(s)
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
IF = 0.5 A
IF = 1 A
Min
Typ
290
335
410
100
435
Max
Unit
mV
mV
mV
μA
VF
forward voltage
-
-
-
-
-
-
-
IF = 2 A
470
-
IR
reverse current
VR = 10 V
VR = 30 V
f = 1 MHz
VR = 1 V
VR = 10 V
2500
μA
Cd
diode capacitance
-
-
-
150
55
-
-
-
pF
pF
ns
[1]
trr
reverse recovery time
47
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
5 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
006aab640
006aab641
10
1
I
R
I
F
(A)
10
(A)
(1)
(2)
−1
(1)
(2)
1
−2
−3
−4
−5
−6
−7
10
10
10
10
10
10
(3)
(4)
(5)
−1
10
10
10
10
(3)
(4)
−2
−3
−4
0
0.2
0.4
0.6
0
10
20
30
V
F
(V)
V (V)
R
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = −40 °C
Fig 4. Forward current as a function of forward
voltage; typical values
Fig 5. Reverse current as a function of reverse
voltage; typical values
006aab642
300
C
d
(pF)
200
100
0
0
10
20
30
V
R
(V)
f = 1 MHz; Tamb = 25 °C
Fig 6. Diode capacitance as a function of reverse voltage; typical values
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
6 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
006aab643
006aab644
1.5
4.5
P
F(AV)
(W)
(4)
P
R(AV)
(W)
(3)
1.2
0.9
0.6
0.3
0.0
(2)
3.0
1.5
0
(1)
(1)
(2)
(3)
(4)
0.0
1.0
2.0
3.0
0
10
20
30
I
(A)
V (V)
R
F(AV)
Tj = 150 °C
Tj = 125 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 7. Average forward power dissipation as a
function of average forward current; typical
values
Fig 8. Average reverse power dissipation as a
function of reverse voltage; typical values
006aab645
006aab646
3.0
3.0
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(1)
(2)
2.0
2.0
(2)
(3)
(3)
(4)
1.0
0.0
1.0
0.0
(4)
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
amb
175
T
amb
FR4 PCB, standard footprint
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 150 °C
Tj = 150 °C
(1) δ = 1; DC
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
ambient temperature; typical values
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
7 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
006aab647
006aab648
3.0
3.0
(1)
(1)
I
I
F(AV)
(A)
F(AV)
(A)
(2)
(2)
2.0
2.0
(3)
(4)
(3)
(4)
1.0
0.0
1.0
0.0
0
25
50
75
100
125
150
(°C)
175
0
25
50
75
100
125
150
T (°C)
sp
175
T
amb
Ceramic PCB, Al2O3, standard footprint
Tj = 150 °C
(1) δ = 1; DC
Tj = 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 11. Average forward current as a function of
ambient temperature; typical values
Fig 12. Average forward current as a function of
solder point temperature; typical values
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
8 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig 13. Duty cycle definition
The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are
calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current,
IRMS = IF(AV) at DC, and
with IRMS defined as RMS current.
× δ
IRMS = IM
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
1.3
0.65
max
0.35
0.25
0.45
0.35
1
2
1.05
0.95
2.1
1.9
1.1
0.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
09-11-12
Fig 14. Package outline SOT1061
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
9 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PMEG3020EPA SOT1061
4 mm pitch, 8 mm tape and reel
-115
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
2.1
1.3
0.5 (2×)
0.4 (2×)
0.5 (2×) 0.6 (2×)
1.05
0.6
0.55
2.3
0.25
1.1
1.2
0.25
0.25
0.4
0.5
1.6
1.7
Dimensions in mm
solder paste = solder lands
solder resist
occupied area
sot1061_fr
Reflow soldering is the only recommended soldering method.
Fig 15. Reflow soldering footprint SOT1061
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
10 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
12. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEG3020EPA_1
20091215
Product data sheet
-
-
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
11 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMEG3020EPA_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 15 December 2009
12 of 13
PMEG3020EPA
NXP Semiconductors
2 A low VF MEGA Schottky barrier rectifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 December 2009
Document identifier: PMEG3020EPA_1
相关型号：
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