PMGD290UCEA [NEXPERIA]
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFETProduction;
| 型号： | PMGD290UCEA |
| 厂家： | 
Nexperia |
| 描述： | 20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFETProduction 开关 光电二极管 晶体管 |
| 文件： | 总21页 (文件大小：782K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
28 March 2014
Product data sheet
1. General description
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very
small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Very fast switching
•
•
•
•
Trench MOSFET technology
2 kV ESD protection
AEC-Q101 qualified
3. Applications
Relay driver
•
•
•
•
•
High-speed line driver
Low-side loadswitch
Switching circuits
Automotive applications
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
-
290
380
mΩ
TR2 (P-channel), Static characteristics
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
-
670
850
mΩ
TR1 (N-channel)
VDS
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
20
8
V
VGS
-8
-
V
ID
VGS = 4.5 V; Tamb = 25 °C
[1]
725
mA
TR2 (P-channel)
VDS
drain-source voltage
Tj = 25 °C
-
-
-20
V
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
VGS
Parameter
Conditions
Min
-8
Typ
Max
8
Unit
V
gate-source voltage
drain current
-
-
ID
VGS = -4.5 V; Tamb = 25 °C
[1]
-
-500
mA
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[1]
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
6
5
4
3
1
2
3
4
5
6
S1
G1
D2
S2
G2
D1
source TR1
gate TR1
G1
drain TR2
source TR2
gate TR2
G2
1
2
TSSOP6 (SOT363)
S1
S2
drain TR1
017aaa262
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
SOT363
PMGD290UCEA
TSSOP6
plastic surface-mounted package; 6 leads
7. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PMGD290UCEA
YD%
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1 (N-channel)
VDS
VGS
drain-source voltage
gate-source voltage
Tj = 25 °C
-
20
8
V
V
-8
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
2 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Max
725
450
3
Unit
mA
mA
A
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-
-
-
-
-
IDM
Ptot
peak drain current
total power dissipation
[2]
[1]
280
320
990
mW
mW
mW
Tsp = 25 °C
TR1 (N-channel), Source-drain diode
IS source current
TR1 N-channel), ESD maximum rating
Tamb = 25 °C
[1]
[3]
-
-
370
mA
V
VESD
electrostatic discharge voltage HBM
2000
TR2 (P-channel)
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-20
8
V
-8
-
V
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-500
-320
-2
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
280
320
990
mW
mW
mW
-
Tsp = 25 °C
-
TR2 (P-channel), Source-drain diode
IS source current
TR2 (P-channel), ESD maximum rating
Tamb = 25 °C
[1]
[3]
[2]
-
-
-370
mA
V
VESD
Per device
Ptot
electrostatic discharge voltage HBM
2000
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb = 25 °C
-
445
150
150
150
mW
°C
Tj
-55
-55
-65
Tamb
Tstg
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[1]
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
[3] Measured between all pins.
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
3 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-007202
10
Limit R
= V /I
DS
DSon
D
I
D
(A)
1
t
= 1 ms
p
-1
t
t
= 10 ms
10
10
p
p
DC; T = 25 °C
sp
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
= 100 ms
2
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 3. TR1 (N-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
4 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
aaa-007203
-10
Limit R
= V /I
DS
I
DSon
D
D
(A)
-1
t
= 1 ms
p
-1
t
t
= 10 ms
-10
p
p
DC; T = 25 °C
sp
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
= 100 ms
2
-2
-10
-1
2
-10
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 4. TR2 (P-channel): safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
390
340
445
390
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
130
K/W
TR2 (P-channel)
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
390
340
445
390
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
130
K/W
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
-
-
300
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2]
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
5 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa034
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa035
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2.
Fig. 6. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
6 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa034
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 7. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa035
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
- 3
- 2
- 1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 8. TR2: transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
7 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
TR1 (N-channel), Static characteristics
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.5
0.75
0.95
IDSS
drain leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VDS = 20 V; VGS = 0 V; Tj = 150 °C
-
-
-
-
-
-
1
µA
µA
µA
10
10
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
VGS = -8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
-
-
-10
µA
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 500 mA; Tj = 25 °C
VGS = 4.5 V; ID = 500 mA; Tj = 150 °C
VGS = 2.5 V; ID = 200 mA; Tj = 25 °C
VGS = 1.8 V; ID = 10 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
-
-
-
-
290
460
420
0.6
380
610
620
1.1
-
mΩ
mΩ
mΩ
Ω
gfs
transfer conductance
1.6
S
TR1 (N-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 10 V; ID = 500 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.45
0.15
0.15
55
0.68
nC
nC
nC
pF
pF
pF
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
83
-
Coss
Crss
15
reverse transfer
capacitance
7
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; RL = 250 Ω; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
6
12
ns
ns
ns
ns
4
-
turn-off delay time
fall time
86
31
172
-
TR1 (N-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = 300 mA; VGS = 0 V; Tj = 25 °C
0.48
-20
0.77
-
1.2
-
V
V
TR2 (P-channel), Static characteristics
V(BR)DSS
drain-source
ID = -250 µA; VGS = 0 V; Tj = 25 °C
breakdown voltage
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
8 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.5
-0.8
-1.3
V
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
-
-
-
-
-
-
-1
µA
µA
µA
-10
10
IGSS
gate leakage current
VGS = 8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
VGS = -8 V; VDS = 0 V;
-40 °C < Tj < 150 °C
-
-
-10
µA
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -400 mA; Tj = 25 °C
VGS = -4.5 V; ID = -400 mA; Tj = 150 °C
VGS = -2.5 V; ID = -200 mA; Tj = 25 °C
VGS = -1.8 V; ID = -10 mA; Tj = 25 °C
VDS = -10 V; ID = -200 mA; Tj = 25 °C
-
-
-
-
-
670
1.1
1.2
1.8
610
850
1.4
1.5
2.8
-
mΩ
Ω
Ω
Ω
gfs
transfer conductance
mS
TR2 (P-channel), Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -10 V; ID = -400 mA;
VGS = -4.5 V; Tj = 25 °C
-
-
-
-
-
-
0.76
0.28
0.18
58
1.14
nC
nC
nC
pF
pF
pF
-
-
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
87
-
Coss
Crss
21
reverse transfer
capacitance
12
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; RL = 250 Ω; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
18
30
80
72
36
ns
ns
ns
ns
-
turn-off delay time
fall time
160
-
TR2 (P-channel), Source-drain diode characteristics
VSD
source-drain voltage
IS = -300 mA; VGS = 0 V; Tj = 25 °C
-0.48 -0.84 -1.2
V
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
9 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa351
017aaa352
- 3
0.7
10
I
4.5 V
2.5 V
1.8 V
D
(A)
0.6
V
= 1.6 V
GS
I
D
(A)
0.5
0.4
0.3
0.2
0.1
- 4
- 5
- 6
10
(1)
(2)
(3)
1.4 V
10
10
1.2 V
1.0 V
0.0
0
1
2
3
4
0.00
0.25
0.50
0.75
1.00
1.25
(V)
V
(V)
V
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
Fig. 9. TR1; Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 10. TR1; Sub-threshold drain current as a function
of gate-source voltage
017aaa353
017aaa354
2.0
2.0
R
DSon
(Ω)
R
DSon
(Ω)
(1)
(2)
(3)
1.5
1.0
0.5
0.0
1.5
1.0
0.5
0.0
(4)
(1)
(2)
(5)
(6)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
(1) VGS = 1.3 V
(2) VGS = 1.4 V
(3) VGS = 1.6 V
(4) VGS = 1.8 V
(5) VGS = 2.5 V
(6) VGS = 4.5 V
Fig. 12. TR1; Drain-source on-state resistance as a
function of gate-source voltage; typical values
Fig. 11. TR1; Drain-source on-state resistance as a
function of drain current; typical values
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
10 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa355
017aaa356
0.7
1.75
I
D
a
(A)
0.6
1.50
0.5
0.4
0.3
0.2
0.1
0.0
1.25
1.00
0.75
0.50
(2)
(1)
0.0
0.5
1.0
1.5
2.0
V
2.5
(V)
-60
0
60
120
180
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
Fig. 14. TR1; Normalized drain-source on-state
resistance as a function of junction
temperature; typical values
(2) Tj = 150 °C
Fig. 13. TR1; Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa357
017aaa358
2
1.25
10
V
GS(th)
(V)
(1)
1.00
0.75
0.50
0.25
0.00
C
(pF)
(1)
(2)
(2)
10
(3)
(3)
1
10
- 1
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig. 15. TR1; Gate-source threshold voltage as a
function of junction temperature
Fig. 16. TR1; Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
©
PMGD290UCEA
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
28 March 2014
11 / 21
Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa359
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 18. Gate charge waveform definitions
0.0
0.1
0.2
0.3
0.4
Q
0.5
(nC)
G
ID = 0.5 A; VDS = 10 V; Tamb = 25 °C
Fig. 17. TR1; Gate-source voltage as a function of gate
charge; typical values
017aaa360
017aaa363
0.7
S
(A)
0.6
-0.5
D
-4.5 V
-2.5 V
-2.0 V
I
I
(A)
-0.4
V
= -1.8 V
GS
0.5
0.4
0.3
0.2
0.1
0.0
-0.3
-0.2
-0.1
0.0
(1)
(2)
-1.6 V
-1.4 V
0.0
0.2
0.4
0.6
0.8
V
1.0
(V)
0
-1
-2
-3
-4
V
(V)
DS
SD
VGS = 0 V
Tj = 25 °C
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 20. TR2; Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 19. TR1; Source current as a function of source-
drain voltage; typical values
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa364
017aaa365
-3
-10
4
R
DSon
(Ω)
(1)
(2)
(3)
I
D
(A)
3
-4
-5
-6
-10
(1)
(2)
(3)
2
1
0
(4)
(5)
-10
-10
0.0
-0.5
-1.0
-1.5
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
V
(V)
I
(A)
D
GS
Tj = 25 °C; VDS = -5 V
(1) minimum values
(2) typical values
Tj = 25 °C
(1) VGS = -1.5 V
(2) VGS = -1.8 V
(3) VGS = -2.0 V
(4) VGS = -2.5 V
(5) VGS = -4.5 V
(3) maximum values
Fig. 21. TR2; Sub-threshold drain current as a function
of gate-source voltage
Fig. 22. TR2; Drain-source on-state resistance as a
function of drain current; typical values
017aaa366
017aaa367
4
-0.5
I
D
R
DSon
(Ω)
(A)
-0.4
3
-0.3
-0.2
-0.1
0.0
2
1
0
(1)
(2)
(1)
(2)
-4
0
-1
-2
-3
-5
0.0
-0.5
-1.0
-1.5
-2.0
V
(V)
V
(V)
GS
GS
ID = -400 mA
(1) Tj = 150 °C
(2) Tj = 25 °C
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig. 23. TR2; Drain-source on-state resistance as a
function of gate-source voltage; typical values
Fig. 24. TR2; Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa368
017aaa369
2.0
a
-1.5
(1)
V
GS(th)
(V)
1.5
1.0
0.5
-1.0
-0.5
0.0
(2)
(3)
0.0
-60
0
60
120
180
-60
0
60
120
180
T (°C)
j
T (°C)
j
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
Fig. 25. TR2; Normalized drain-source on-state
resistance as a function of ambient
temperature; typical values
(3) minimum values
Fig. 26. TR2; Gate-source threshold voltage as a
function of junction temperature
017aaa370
017aaa371
2
10
-5
(1)
V
GS
(V)
-4
-3
-2
-1
0
C
(pF)
(2)
(3)
10
1
-10
-1
2
-1
-10
-10
0.0
0.2
0.4
0.6
0.8
V
(V)
Q (nC)
G
DS
f = 1 MHz; VGS = 0 V
(1) Ciss
ID = -0.4 A; VDD = -10 V; Tamb = 25 °C
Fig. 28. TR2; Gate-source voltage as a function of gate
charge; typical values
(2) Coss
(3) Crss
Fig. 27. TR2; Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
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PMGD290UCEA
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
017aaa372
-0.5
V
DS
I
S
(A)
I
D
-0.4
V
GS(pl)
-0.3
-0.2
-0.1
0.0
V
GS(th)
GS
V
Q
Q
GS1
GS2
(1)
(2)
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 29. Gate charge waveform definitions
0.0
-0.2
-0.4
-0.6
-0.8
V
-1.0
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig. 30. TR2; Source current as a function of source-
drain voltage; typical values
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PMGD290UCEA
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Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 31. Duty cycle definition
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
12. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
06-03-16
Fig. 32. Package outline TSSOP6 (SOT363)
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Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
13. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
0.5
solder resist
(4×)
(4×)
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Fig. 33. Reflow soldering footprint for TSSOP6 (SOT363)
1.5
solder lands
2.5
0.3
4.5
solder resist
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig. 34. Wave soldering footprint for TSSOP6 (SOT363)
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Nexperia B.V. 2017. All rights reserved
Product data sheet
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMGD290UCEA v.3
Modifications:
20140328
Product data sheet
-
PMGD290UCEA v.2
Table 7: IGSS parameter unit corrected
•
PMGD290UCEA v.2
PMGD290UCEA v.1
20130418
20130415
Product data sheet
Product data sheet
-
-
PMGD290UCEA v.1
-
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PMGD290UCEA
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Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use in automotive applications — This Nexperia
product has been qualified for use in automotive
Product
[short] data
sheet
Production
This document contains the product
specification.
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
15.2 Definitions
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
short data sheet, the full data sheet shall prevail.
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
15.3 Disclaimers
Terms and conditions of commercial sale — Nexperia
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
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PMGD290UCEA
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Product data sheet
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Nexperia
PMGD290UCEA
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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Product data sheet
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Nexperia
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20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
16. Contents
1
2
3
4
5
6
7
8
9
10
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................5
Characteristics .......................................................8
11
Test information ...................................................16
11.1
Quality information ............................................. 16
12
13
14
Package outline ................................................... 16
Soldering .............................................................. 17
Revision history ...................................................18
15
Legal information .................................................19
Data sheet status ............................................... 19
Definitions ...........................................................19
Disclaimers .........................................................19
Trademarks ........................................................ 20
15.1
15.2
15.3
15.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 28 March 2014
©
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Product data sheet
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相关型号：
PMGD780SN/V,115
Dual N-channel TrenchMOS standard level FET, SOT363 Package, Standard Marking, Reel Pack, SMD, 7"
NXP
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