PMH400UNE [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;型号: | PMH400UNE |
厂家: | Nexperia |
描述: | 30 V, N-channel Trench MOSFETProduction |
文件: | 总14页 (文件大小:268K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMH400UNE
30 V, N-channel Trench MOSFET
6 February 2023
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3
(SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Low threshold voltage
•
•
•
•
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection up to 1.7 kV HBM
Leadless ultra small and ultra thin SMD plastic package: 0.62 × 0.62 × 0.37 mm
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-8
-
8
V
ID
VGS = 4.5 V; Tamb = 25 °C
[1]
0.9
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 0.7 A; Tj = 25 °C
-
400
460
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
D
G
S
D
2
1
2
source
drain
3
G
3
Transparent top view
S
017aaa255
DFN0606-3 (SOT8001)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMH400UNE
DFN0606-3
plastic, leadless ultra small package; 3 terminals; body
0.62 x 0.62 x 0.37 mm
SOT8001
7. Marking
Table 4. Marking codes
Type number
Marking code
0001 0111
PMH400UNE
reading direction
reading example:
1011 1101
last 4 digits: 1101
pin 1 indication
marking code
(example)
first 4 digits: 1011
reading direction
aaa-035663
Fig. 1. DFN0606-3 (SOT8001) binary marking code description
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
2 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-8
8
V
ID
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
0.9
A
-
0.57
3
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[2]
[1]
-
0.36
0.66
2.23
150
150
150
W
W
W
°C
°C
°C
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
0.6
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa001
017aaa002
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
(°C)
- 25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 2. Normalized total power dissipation as a
function of ambient temperature
Fig. 3. Normalized continuous drain current as a
function of ambient temperature
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PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
3 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
aaa-031003
10
I
D
Limit R
= V /I
DS
DSon
D
(A)
t
p
= 10 µs
100 µs
1
1 ms
10 ms
-1
DC; T = 25 °C
sp
10
10
100 ms
2
DC; T
1
= 25 °C; 1 cm
amb
-2
-1
2
10
10
10
V
(V)
DS
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
4 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
287
158
47
Max
344
190
56
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
aaa-030991
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-030992
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.2
0.1
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
5 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.45
0.7
0.95
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 150 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 2.5 V; VDS = 0 V; Tj = 25 °C
VGS = -2.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 0.7 A; Tj = 25 °C
VGS = 4.5 V; ID = 0.7 A; Tj = 150 °C
VGS = 2.5 V; ID = 0.5 A; Tj = 25 °C
VGS = 1.8 V; ID = 0.08 A; Tj = 25 °C
VGS = 1.5 V; ID = 0.01 A; Tj = 25 °C
VDS = 10 V; ID = 0.7 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
mΩ
S
-
10
IGSS
gate leakage current
-
10
-
-10
1
-
-
-1
-
0.1
-0.1
460
825
575
670
920
-
-
RDSon
drain-source on-state
resistance
400
715
500
580
740
1.6
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
11.6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 0.7 A; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.62
0.07
0.15
45.4
7.3
0.93
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
-
-
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
4.4
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 0.7 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
1
2
4
2
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 0.6 A; VGS = 0 V; Tj = 25 °C
-
0.7
1.2
V
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
6 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
aaa-031004
aaa-031005
-3
-4
-5
-6
2.5
10
D
3.0 V
2.5 V
I
D
(A)
3.5 V
4.0 V
4.5 V
I
(A)
2
10
1.5
1
1.8 V
min
typ
max
10
10
1.5 V
0.5
0
V
= 1.2 V
GS
3
0
1
2
4
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-031006
aaa-031007
1
4
1.8 V
1.5 V
R
DSon
(Ω)
R
DSon
(Ω)
0.75
0.5
0.25
0
3
2
1
2.5 V
3.0 V
3.5 V
4.0 V
= 4.5 V
V
GS
T = 150 °C
j
T = 25 °C
j
0
0
1
2
3
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = 0.7 A
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
7 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
aaa-031008
aaa-031009
1
2
1.5
1
I
D
a
(A)
0.8
0.6
0.4
0.2
0
0.5
T = 150 °C
j
T = 25 °C
j
0
-60
0
1
2
3
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = 5 V
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-031010
aaa-031011
3
1.5
10
C
(pF)
V
GS(th)
(V)
2
1.0
0.5
0
10
max
typ
C
iss
10
min
C
C
oss
rss
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 µA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of Fig. 14. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
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Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
aaa-031012
5
V
(V)
V
GS
DS
4
I
D
3
2
1
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
0.5
1
Q
G
(nC)
Q
G(tot)
003aaa508
ID = 0.7 A; VDS = 15 V; Tj = 25 °C
Fig. 16. Gate charge waveform definitions
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-031013
0.7
I
S
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
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PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
9 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
12. Package outline
DFN0606-3, plastic, leadless ultra small package; 3 terminals; body 0.62 x 0.62 x 0.37 mm
SOT8001
A
B
D
u
C
2x
A
1
E
pin 1
index area
detail X
u
C
2x
v
C
C
A B
b (2x)
2
pin 1
w
index area
e
seating plane
1
u
C
C
A
L (2x)
e
1
X
e
2
L
1
Y
C
3
v
w
C
C
A
B
b
1
0
0.5 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
b
1
D
E
e
e
e
L
L
1
u
v
w
Y
1
1
2
max 0.40 0.04 0.20 0.55
0.20 0.26
nom 0.37
min 0.34
0.15 0.50 0.62 0.62 0.35 0.186 0.155 0.15 0.21 0.05
0.1
0.05 0.05
mm
0.10 0.45
IEC
0.10 0.16
sot8001_po
References
Outline
version
European
projection
Issue date
JEDEC
- - -
JEITA
18-12-03
18-12-05
SOT8001
Fig. 19. Package outline DFN0606-3 (SOT8001)
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
10 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN0606-3 package
SOT8001
0.80
0.70
0.60
0.55
0.35 0.30
0.21
0.98 0.88
0.13
0.78
0.245
0.30
0.35
0.15
0.55
0.20
occupied area
solder lands
solder resist
solder paste
Dimensions in mm
18-11-30
Issue date
sot8001_fr
Fig. 20. Reflow soldering footprint for DFN0606-3 (SOT8001)
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
11 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
PMH400UNE v.2
Modifications:
Release date
20230206
Data sheet status
Change notice
Supersedes
Product data sheet
-
PMH400UNE v.1
•
Fig. 1, clarifying the reading example
PMH400UNE v.1
20200407 Product data sheet
-
-
©
PMH400UNE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
12 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
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liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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with the same product type number(s) and title. A short data sheet is
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©
PMH400UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
13 / 14
Nexperia
PMH400UNE
30 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 6 February 2023
©
PMH400UNE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
14 / 14
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