PMN48XP [NEXPERIA]
20 V, 4.1 A P-channel Trench MOSFETProduction;
| 型号： | PMN48XP |
| 厂家： | 
Nexperia |
| 描述： | 20 V, 4.1 A P-channel Trench MOSFETProduction |
| 文件： | 总15页 (文件大小：1109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Low RDSon
Trench MOSFET technology
Very fast switching
1.3 Applications
Relay driver
High-side loadswitch
Switching circuits
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-12
-
V
[1]
ID
VGS = -4.5 V; Tamb = 25 °C
-4.1
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
-
48
55
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
D
D
G
S
D
D
drain
drain
gate
D
6
5
4
3
2
3
G
4
source
drain
drain
1
2
S
5
SOT457 (TSOP6)
017aaa094
6
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMN48XP
TSOP6
plastic surface-mounted package (TSOP6); 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
PMN48XP
Marking code
ZV
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
-20
12
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-12
V
[1]
[1]
ID
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
-4.1
-2.5
-20
530
A
-
A
IDM
Ptot
peak drain current
-
A
[2]
[1]
total power dissipation
-
mW
-
1285 mW
6250 mW
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
-1.4
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
2 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
017aaa123
017aaa124
120
120
P
der
I
der
(%)
(%)
80
80
40
40
0
−75
0
−75
−25
25
75
125
175
−25
25
75
125
175
T (°C)
j
T (°C)
j
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
3 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
017aaa202
2
–10
I
D
(A)
Limit R
= V /I
DS D
DSon
–10
(1)
(2)
–1
–1
(3)
(4)
(5)
–10
(6)
–2
–10
–10
–1
2
–1
–10
–10
V
(V)
DS
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 6 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
4 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
204
84
Max
235
97
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
17
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
017aaa203
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
10
0.02
0
0.01
1
–3
–2
–1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa204
3
10
Z
th(j-a)
(K/W)
2
duty cycle = 1
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0
0.01
1
–3
–2
–1
2
3
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
5 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-20
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
-0.75 -1
-1.25
IDSS
drain leakage current
VDS = -20 V; VGS = 0 V; Tj = 25 °C
VDS = -20 V; VGS = 0 V; Tj = 150 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C
VGS = -2.5 V; ID = -2 A; Tj = 25 °C
VDS = -5 V; ID = -2.4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-1
µA
µA
nA
mΩ
mΩ
mΩ
S
-
-10
-100
55
80
82
-
IGSS
gate leakage current
-
RDSon
drain-source on-state
resistance
48
70
72
10
gfs
forward
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
ID = -1 A; VDS = -10 V; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
-
8.7
1.8
1.7
13
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
VGS = 0 V; VDS = -10 V; f = 1 MHz;
Tj = 25 °C
1000
130
90
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -10 V; VGS = -5 V; RG(ext) = 6 Ω;
Tj = 25 °C; ID = -1 A
-
-
-
-
15
22
51
22
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = -2.4 A; VGS = 0 V; Tj = 25 °C
-
-0.75 -1
V
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
6 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
017aaa205
017aaa129
−3
−4
−5
−6
–14
−10
I
D
–4.5 V
–2.5 V
(A)
I
–12
D
V
GS
= –2.75 V
(A)
–10
–8
–6
–4
–2
−10
(1)
(2)
(3)
–2 V
−10
−10
–1.6 V
–4
0
0
–1
–2
–3
–5
(V)
0.0
−0.5
−1.0
− 1.5
V
V
(V)
GS
DS
Tj = 25 °C; VDS = -3 V
(1) minimum values
(2) typical values
Tj = 25 °C
(3) maximum values
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa206
017aaa131
160
0.25
R
(Ω)
DSon
R
DSon
(mΩ)
(1)
(2)
(3)
0.20
0.15
0.10
0.05
0.00
120
80
40
0
(4)
(5)
(1)
(2)
0
–2
–4
–6
–8
–10
–12
(A)
–14
0
−1
−2
−3
−4
−5
(V)
I
V
GS
D
ID = -2.4 A
Tj = 25 °C
(1) Tj = 125 °C
(2) Tj = 25 °C
(1) VGS = -1.6 V
(2) VGS = -2.0 V
(3) VGS = -2.5 V
(4) VGS = -2.75 V
(5) VGS = -4.5 V
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
7 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
017aaa207
017aaa133
–14
2.0
1.5
1.0
0.5
0.0
I
D
(1)
(2)
(A)
a
–12
–10
–8
–6
–4
–2
0
(2)
(1)
0
–1
–2
–3
−60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
017aaa134
017aaa135
4
−1.6
10
V
GS(th)
(V)
C
(pF)
(1)
(2)
−1.2
−0.8
−0.4
0.0
(1)
3
10
(2)
(3)
2
10
(3)
10
–10
–1
2
−60
0
60
120
180
–1
–10
–10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
8 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
017aaa136
−4.5
V
DS
V
GS
I
(V)
D
−3.0
V
GS(pl)
V
GS(th)
GS
V
−1.5
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
0.0
0
2
4
6
8
10
(nC)
Q
G
ID = -2.4 A; VDS = -10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
Fig 15. Gate charge waveform definitions
017aaa138
−14
S
I
(A)
−12
−10
−8
−6
−4
−2
0
(1)
(2)
0.0
−0.4
−0.8
−1.2
V
(V)
SD
V
GS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
9 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
8. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
SOT457
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
c
1
2
3
L
p
e
b
p
w
M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A
b
c
D
E
e
H
L
Q
v
w
y
p
1
p
E
0.1
0.013
0.40
0.25
1.1
0.9
0.26
0.10
3.1
2.7
1.7
1.3
3.0
2.5
0.6
0.2
0.33
0.23
mm
0.95
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-11-07
06-03-16
SOT457
SC-74
Fig 17. Package outline SOT457 (TSOP6)
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
10 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
9. Soldering
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
0.95
3.3 2.825
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig 18. Reflow soldering footprint for SOT457 (TSOP6)
5.3
1.5
(4×)
solder lands
1.475
5.05
solder resist
occupied area
0.45
(2×)
1.475
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 19. Wave soldering footprint for SOT457 (TSOP6)
PMN48XP
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
11 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
10. Revision history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMN48XP v.1
20110421
Product data sheet
-
-
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
12 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
11. Legal information
11.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes — Nexperia reserves the right to make
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changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
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malfunction of a Nexperia product can reasonably be expected
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
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data sheet shall define the specification of the product as agreed between
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
13 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
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In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
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non-automotive qualified products in automotive equipment or applications.
12. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
PMN48XP
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 1 — 21 April 2011
14 of 15
PMN48XP
Nexperia
20 V, 4.1 A P-channel Trench MOSFET
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . .1
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
11.1
11.2
11.3
11.4
12
Contact information. . . . . . . . . . . . . . . . . . . . . .14
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 21 April 2011
相关型号：
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