PMPB17EP [NEXPERIA]

30 V, P-channel Trench MOSFETProduction;


型号：	PMPB17EP
厂家：	Nexperia
描述：	30 V, P-channel Trench MOSFETProduction
文件：	总14页 (文件大小：300K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PMPB17EP

30 V, P-channel Trench MOSFET

26 January 2022

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Trench MOSFET technology

Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

Exposed drain pad for excellent thermal conduction

3. Applications

•

Charging switch for portable devices

DC-to-DC converters

Power management in battery-driven portable devices

Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= -10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -10 V; I_D= -5.8 A; T_j= 25 °C

[1]

-11

Static characteristics

R_DSondrain-source on-state

resistance

17.5

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Symbol

Description

drain

Simplified outline

Graphic symbol

drain

gate

source

drain

Transparent top view

017aaa257

drain

DFN2020M-6 (SOT1220-2)

source

6. Ordering information

Table 3. Ordering information

Type number

Package

Name

Description

Version

PMPB17EP

DFN2020M-6 plastic thermal enhanced ultra thin small outline package; SOT1220-2

no leads; 6 terminals; body 2 x 2 x 0.65 mm

7. Marking

Table 4. Marking codes

Type number

Marking code

PMPB17EP

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Product data sheet

26 January 2022

2 / 14

Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

-30

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= -10 V; T_amb= 25 °C; t ≤ 5 s

V_GS= -10 V; T_amb= 25 °C

V_GS= -10 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

[1]

-11

-7.7

-4.9

-31

1.9

3.8

I_DM

P_tot

peak drain current

total power dissipation

[1]

°C

T_amb= 25 °C; t ≤ 5 s

T_sp= 25 °C

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

T_amb

T_stg

Source-drain diode

I_Ssource current

T_amb= 25 °C

[1]

-1.9

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

017aaa123

017aaa124

120

der

(%)

der

(%)

- 75

- 25

125

175

- 25

125

175

T (°C)

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Fig. 2. Normalized continuous drain current as a

function of junction temperature

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

aaa-034344

-10

Limit R

= V /I

= 10 µs

DSon

(A)

-10

100 µs

1 ms

-1

DC; T = 25 °C

DC; T

= 25 °C;

amb

drain mounting pad 6 cm

10 ms

-10

100 ms

-2

-10

-1

-10

-1

-10

(V)

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB17EP

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Product data sheet

26 January 2022

4 / 14

Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

223

Max

256

Unit

K/W

R_th(j-a)

thermal resistance from in free air

junction to ambient

[1]

[2]

in free air; t ≤ 5 s

R_th(j-sp)

thermal resistance from

junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm².

aaa-026869

th(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

-3

-2

-1

(s)

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

aaa-026870

duty cycle = 1

0.75

th(j-a)

(K/W)

0.5

0.33

0.2

0.25

0.1

0.05

0.02

0.01

-3

-2

-1

(s)

FR4 PCB, mounting pad for drain 6 cm²

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Static characteristics

V_(BR)DSSdrain-source

breakdown voltage

Parameter

Conditions

Min

Typ

Max

Unit

I_D= -250 µA; V_GS= 0 V; T_j= 25 °C

-30

-1

V_GSth

gate-source threshold I_D= -250 µA; V_DS= V_GS; T_j= 25 °C

voltage

-1.7

-2.5

I_DSS

I_GSS

drain leakage current

gate leakage current

V_DS= -30 V; V_GS= 0 V; T_j= 25 °C

V_GS= -20 V; V_DS= 0 V; T_j= 25 °C

V_GS= 20 V; V_DS= 0 V; T_j= 25 °C

V_GS= -10 V; I_D= -5.8 A; T_j= 25 °C

V_GS= -10 V; I_D= -5.8 A; T_j= 150 °C

V_GS= -4.5 V; I_D= -5 A; T_j= 25 °C

V_DS= -5 V; I_D= -5.8 A; T_j= 25 °C

-1

µA

mΩ

-100

100

R_DSon

drain-source on-state

resistance

17.5

g_fs

forward

transconductance

R_G

gate resistance

f = 1 MHz

5.9

Dynamic characteristics

Q_G(tot)

Q_GS

Q_GD

C_iss

total gate charge

V_DS= -15 V; I_D= -5.8 A; V_GS= -10 V;

T_j= 25 °C

gate-source charge

gate-drain charge

input capacitance

output capacitance

4.4

6.5

V_DS= -15 V; f = 1 MHz; V_GS= 0 V;

T_j= 25 °C

1570

159

141

C_oss

C_rss

reverse transfer

capacitance

t_d(on)

t_r

t_d(off)

t_f

turn-on delay time

rise time

V_DS= -15 V; I_D= -5.8 A; V_GS= -10 V;

R_G(ext)= 6 Ω; T_j= 25 °C

turn-off delay time

fall time

Source-drain diode

V_SD

source-drain voltage

I_S= -1.9 A; V_GS= 0 V; T_j= 25 °C

-0.8

-1.2

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

aaa-034345

aaa-034346

-3

-4

-5

-6

-25

-10

-10.0 V

-4.5 V

(A)

-20

-3.5 V

min

typ

max

-10

-3.2 V

-15

-10

-5

-3.0 V

-10

= -2.8 V

-1

-2

-3

-4

-1

-2

-3

(V)

T_j= 25 °C

V_DS= -5 V; T_j= 25 °C

Fig. 6. Output characteristics: drain current as a

function of drain-source voltage; typical values

Fig. 7. Sub-threshold drain current as a function of

gate-source voltage

aaa-034347

aaa-034348

100

-3.1 V

DSon

-3.2 V

-3.4 V

-3.6 V

T = 150 °C

-3.8 V

T = 25 °C

-4.5 V

= -10.0 V

-5

-10

-15

-20

-25

-2

-4

-6

(A)

(V)

T_j= 25 °C

I_D= -7 A

Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function

of drain current; typical values

of gate-source voltage; typical values

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

aaa-034349

aaa-034350

-25

2.0

1.5

1.0

0.5

(A)

-20

T = 150 °C

-15

-10

-5

T = 25 °C

-1

-2

-3

-4

-5

-60

120

180

(V)

T (°C)

V_DS= -5 V

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

aaa-034351

017aaa835

-3

(pF)

GSth

(V)

iss

-2

max

oss

typ

rss

-1

min

-60

-1

-10

120

180

-1

-10

T (°C)

(V)

I_D= -250 µA; V_DS= V_GS

f = 1 MHz; V_GS= 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances

junction temperature

as a function of drain-source voltage; typical

values

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

aaa-034352

-10

(V)

-8

-6

-4

-2

GS(pl)

GS(th)

GS2

GS1

(nC)

G(tot)

003aaa508

V_DS= -15 V; I_D= -5.8 A; T_j= 25 °C

Fig. 15. Gate charge waveform definitions

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa837

-3

(A)

-2

-1

T = 150 °C

T = 25 °C

-0.2

-0.4

-0.6

-0.8

-1.0

(V)

V_GS= 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information

duty cycle δ =

006aaa812

Fig. 17. Duty cycle definition

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

12. Package outline

DFN2020M-6: plastic thermal enhanced ultra thin small outline package; no leads;

6 terminals; body 2 x 2 x 0.65 mm

SOT1220-2

*(6x)

pin 1

index area

detail X

seating plane

C A

(6x)

b (6x)

C A

pin 1

index area

Gx45°

2 mm

scale

Dimensions (mm are the original dimensions)

Unit

min 0.55

0.25

1.0

1.1

1.2

0.31

0.36

0.41

1.1 0.6

1.2 0.7 0.65 0.71 0.28

1.3 0.8

0.2 0.20

0.15

(ref)

nom

max

0.60 0.02 0.30

0.65 0.04 0.35

0.25 0.05 0.1 0.05 0.05 0.05

0.30

Note

1. Dimension A is including plating thickness.

2. * Visible depend upon used manufacturing technology.

sot1220-2_po

References

Outline

version

European

projection

Issue date

IEC

JEDEC

- - -

JEITA

20-03-31

20-04-01

SOT1220-2

Fig. 18. Package outline DFN2020M-6 (SOT1220-2)

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

13. Soldering

Footprint information for reflow soldering of DFN2020M-6 package

SOT1220-2

2.6

1.3

1.2

0.2

0.5

0.4

0.3

0.45

0.05

0.45 0.35 0.25

0.2 0.3

0.4

0.2 1.1 1.2

2.3

0.65

0.21 0.11

0.36 0.46 0.56

0.7

0.8

0.9

recommended stencil thickness: 0.1 mm

occupied area

solder resist

solder paste

solder land

Dimensions in mm

20-03-17

20-06-17

Issue date

sot1220-2_fr

Fig. 19. Reflow soldering footprint for DFN2020M-6 (SOT1220-2)

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

14. Revision history

Table 8. Revision history

Data sheet ID

Release date

20220126

Data sheet status

Change notice

Supersedes

PMPB17EP v.1

Product data sheet

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

injury, death or severe property or environmental damage. Nexperia and its

suppliers accept no liability for inclusion and/or use of Nexperia products in

such equipment or applications and therefore such inclusion and/or use is at

the customer’s own risk.

15. Legal information

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Data sheet status

Document status Product

Definition

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no representation

or warranty that such applications will be suitable for the specified use

without further testing or modification.

[1][2]

status [3]

Objective [short]

data sheet

Development

This document contains data from

the objective specification for

product development.

Customers are responsible for the design and operation of their applications

and products using Nexperia products, and Nexperia accepts no liability for

any assistance with applications or customer product design. It is customer’s

sole responsibility to determine whether the Nexperia product is suitable

and fit for the customer’s applications and products planned, as well as

for the planned application and use of customer’s third party customer(s).

Customers should provide appropriate design and operating safeguards to

minimize the risks associated with their applications and products.

Preliminary [short]

data sheet

Qualification

Production

This document contains data from

the preliminary specification.

Product [short]

data sheet

This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

Nexperia does not accept any liability related to any default, damage, costs

or problem which is based on any weakness or default in the customer’s

applications or products, or the application or use by customer’s third party

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avoid a default of the applications and the products or of the application or

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liability in this respect.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

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In the event that customer uses the product for design-in and use in

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customer (a) shall use the product without Nexperia’s warranty of the

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trademarks are the property of their respective owners.

PMPB17EP

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Product data sheet

26 January 2022

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Nexperia

PMPB17EP

30 V, P-channel Trench MOSFET

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking..........................................................................2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 5

10. Characteristics............................................................6

11. Test information..........................................................9

12. Package outline........................................................ 10

13. Soldering................................................................... 11

14. Revision history........................................................12

15. Legal information......................................................13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 26 January 2022

PMPB17EP

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Product data sheet

26 January 2022

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PMPB17EP [NEXPERIA]

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