PMPB50ENE [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;型号: | PMPB50ENE |
厂家: | Nexperia |
描述: | 30 V, N-channel Trench MOSFETProduction |
文件: | 总14页 (文件大小:309K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMPB50ENE
30 V, N-channel Trench MOSFET
20 January 2022
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
Extended temperature range Tj = 175 °C
•
•
•
•
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Trench MOSFET technology
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 5.1 A; Tj = 25 °C
[1]
6.9
A
Static characteristics
RDSon drain-source on-state
resistance
-
30
43
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
drain
Simplified outline
Graphic symbol
D
D
G
S
D
D
D
S
D
2
drain
1
6
5
4
3
gate
7
2
3
Transparent top view
G
4
source
drain
5
8
6
drain
S
7
drain
DFN2020MD‑6 (SOT1220)
017aaa255
8
source
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMPB50ENE
DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline SOT1220
package with side-wettable flanks (SWF); 6 terminals; 0.65
mm pitch; 2 mm x 2 mm x 0.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
3U
PMPB50ENE
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Product data sheet
20 January 2022
2 / 14
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
6.9
5.1
3.2
20
A
-
A
-
A
IDM
Ptot
peak drain current
-
A
total power dissipation
[1]
[1]
-
1.9
3.8
11
W
W
W
°C
°C
°C
Tamb = 25 °C; t ≤ 5 s
-
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
175
175
175
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
2
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-026120
aaa-026121
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
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PMPB50ENE
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Product data sheet
20 January 2022
3 / 14
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
aaa-026702
2
10
I
D
(A)
Limit R
DSon
= V /I
DS
D
t
= 10 µs
p
10
100 µs
1
1 ms
DC; T = 25 °C
sp
10 ms
100 ms
2
DC; T
= 25 °C; 6 cm
-1
amb
10
10
-2
-1
2
10
1
10
10
V
(V)
DS
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMPB50ENE
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Product data sheet
20 January 2022
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
238
67
Max
274
77
Unit
K/W
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
[2]
-
-
-
-
in free air; t ≤ 5 s
35
40
Rth(j-sp)
thermal resistance from
junction to solder point
11
14
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-026703
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
2
10
0.1
0.05
0.02
0
0.01
10
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-026704
2
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
0.25
0.1
0.05
10
0.02
0.01
0
1
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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PMPB50ENE
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Product data sheet
20 January 2022
5 / 14
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.5
2.5
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 25 °C
VGS = 10 V; ID = 5.1 A; Tj = 175 °C
VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C
VDS = 10 V; ID = 5.1 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
10
-10
200
-200
43
78
60
-
-
-
-
RDSon
drain-source on-state
resistance
30
54
39
13
gfs
forward
transconductance
RG
gate resistance
f = 1 MHz
-
6.6
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 5.1 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
6
10
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
0.7
1.3
271
58
43
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 5.1 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
4
-
-
-
-
ns
ns
ns
ns
24
17
6
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 2 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
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PMPB50ENE
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Product data sheet
20 January 2022
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
aaa-026705
aaa-021995
-3
-4
-5
-6
20
10
D
I
D
(A)
I
V
4.5 V
3.7 V
= 10 V
GS
(A)
16
3.2 V
2.8 V
min
typ
max
10
12
8
10
10
2.4 V
4
0
0
1
2
3
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
aaa-026706
aaa-026707
200
200
V
= 2.8 V
3.2 V
GS
R
DSon
(mΩ)
R
DSon
150
150
100
50
0
100
50
0
3.7 V
T = 175 °C
j
4.5 V
10 V
T = 25 °C
j
0
5
10
15
20
0
4
8
12
16
V
20
I
(A)
(V)
GS
D
Tj = 25 °C
ID = 5.1 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
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PMPB50ENE
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Nexperia B.V. 2022. All rights reserved
Product data sheet
20 January 2022
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
aaa-026708
aaa-026709
20
2.0
1.5
1.0
0.5
0
I
D
a
(A)
16
12
8
T = 25 °C
j
T = 175 °C
j
4
0
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-026710
aaa-026711
3
4
10
V
GS(th)
(V)
C
(pF)
C
iss
3
2
10
max
C
C
oss
rss
2
1
0
typ
10
min
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
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Product data sheet
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
aaa-026712
10
V
(V)
V
GS
DS
8
I
D
6
4
2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
2
4
6
Q
G
(nC)
Q
G(tot)
003aaa508
VDS = 15 V; ID = 5.1 A; Tamb = 25 °C
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-026713
10
I
S
(A)
8
6
4
2
0
T = 175 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
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PMPB50ENE
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Product data sheet
20 January 2022
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
A
D
E
A
T (6×)
A
y
1
1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
L
p
y
E
2
C
D
2
4
5
3
2
J
1
e
J
bp (6×)
D
1
e
v
A B
1
6
pin 1
index area
X
E
1
0
2 mm
scale
e
Dimensions (mm are the original dimensions)
Unit bp
min 0.25 1.9 1.0
0.65 0.04 0.35 2.1 1.2
A
A
D
D
1
D
E
E
E
J
J
1
L
T
v
y
y
1
1
2
1
2
p
0.2 1.9 1.1 0.51
0.3 2.1 1.3 0.61
0.2 0.10
0.16 0.1 0.05 0.1
0.3 0.22
nom
max
mm
0.65 0.27 0.64
Note
1. Dimension A is including plating thickness.
sot1220_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
18-05-30
18-06-07
SOT1220
Fig. 18. Package outline DFN2020MD‑6 (SOT1220)
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PMPB50ENE
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Product data sheet
20 January 2022
10 / 14
Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
SOT1220
0.33 (6×)
0.43 (6×)
0.53 (6×)
0.76
0.66
0.56
0.25 0.35 0.45
0.775
0.285
0.65
2.06
1.25
0.35 (6×)
0.65
1.35
1.05
0.25 (6×)
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
occupied area
solder resist
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220)
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Product data sheet
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
PMPB50ENE v.2
Modifications:
Release date
20220120
Data sheet status
Change notice
Supersedes
Product data sheet
-
PMPB50ENE v.1
•
Chapter "Limiting values": typo correction, unit for Ptot changed
PMPB50ENE v.1
20180426 Product data sheet
-
-
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PMPB50ENE
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Product data sheet
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
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data sheet shall define the specification of the product as agreed between
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to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
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or replacement of any products or rework charges) whether or not such
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In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without Nexperia’s warranty of the
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Nexperia
PMPB50ENE
30 V, N-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information......................................................13
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Date of release: 20 January 2022
©
PMPB50ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2022. All rights reserved
Product data sheet
20 January 2022
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