PMV37ENE [NEXPERIA]

60 V, N-channel Trench MOSFETProduction;
PMV37ENE
型号: PMV37ENE
厂家: Nexperia    Nexperia
描述:

60 V, N-channel Trench MOSFETProduction

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PMV37ENE  
60 V, N-channel Trench MOSFET  
29 November 2021  
Product data sheet  
1. General description  
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted  
Device (SMD) plastic package using Trench MOSFET technology.  
2. Features and benefits  
Logic-level compatible  
Extended temperature range Tj = 175 °C  
Trench MOSFET technology  
ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)  
3. Applications  
Relay driver  
High-speed line driver  
Low-side load switch  
Switching circuits  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
-
-
-
VGS  
-20  
-
20  
V
ID  
VGS = 10 V; Tamb = 25 °C  
[1]  
3.5  
A
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 3.5 A; Tj = 25 °C  
-
37  
49  
mΩ  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
 
 
 
 
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
gate  
Simplified outline  
Graphic symbol  
D
G
S
D
3
2
source  
drain  
3
G
1
2
SOT23  
S
017aaa255  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PMV37ENE  
SOT23  
plastic, surface-mounted package; 3 terminals; 1.9 mm  
pitch; 2.9 mm x 1.3 mm x 1 mm body  
SOT23  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code[1]  
%3M  
PMV37ENE  
[1] % = placeholder for manufacturing site code  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
2 / 15  
 
 
 
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
60  
Unit  
V
drain-source voltage  
gate-source voltage  
drain current  
Tj = 25 °C  
-
VGS  
-20  
20  
V
ID  
VGS = 10 V; Tamb = 25 °C  
VGS = 10 V; Tamb = 100 °C  
Tamb = 25 °C; single pulse; tp ≤ 10 µs  
Tamb = 25 °C  
[1]  
[1]  
-
3.5  
2.5  
14  
A
-
A
IDM  
Ptot  
peak drain current  
-
A
total power dissipation  
[2]  
[1]  
-
710  
1.3  
8.3  
175  
175  
175  
mW  
W
W
°C  
°C  
°C  
-
Tsp = 25 °C  
-
Tj  
junction temperature  
ambient temperature  
storage temperature  
-55  
-55  
-65  
Tamb  
Tstg  
Source-drain diode  
IS source current  
Tamb = 25 °C  
[1]  
-
1.3  
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.  
aaa-026120  
aaa-026121  
120  
120  
P
der  
(%)  
I
der  
(%)  
80  
80  
40  
40  
0
-75  
0
-75  
25  
125  
225  
25  
125  
225  
T (°C)  
j
T (°C)  
j
Fig. 1. Normalized total power dissipation as a  
function of junction temperature  
Fig. 2. Normalized continuous drain current as a  
function of junction temperature  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
3 / 15  
 
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
aaa-029983  
2
10  
I
D
(A)  
Limit R  
DSon  
= V /I  
DS  
D
t
=
p
10 µs  
10  
100 µs  
1
1 ms  
DC; T = 25 °C  
sp  
10 ms  
100 ms  
-1  
10  
10  
2
DC; T  
= 25 °C; 6 cm  
amb  
-2  
-1  
2
10  
1
10  
10  
V
(V)  
DS  
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-  
source voltage  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
4 / 15  
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
175  
95  
Max  
210  
115  
18  
Unit  
K/W  
K/W  
K/W  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
[1]  
[2]  
-
-
-
Rth(j-sp)  
thermal resistance from  
junction to solder point  
13  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm2.  
aaa-029752  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
0.75  
0.5  
2
10  
0.33  
0.25  
0.2  
0.1  
0.05  
10  
0.02  
0.01  
0
1
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
aaa-029753  
3
10  
Z
th(j-a)  
(K/W)  
duty cycle = 1  
2
10  
0.75  
0.5  
0.33  
0.25  
0.2  
0.1  
10  
0.05  
0.02  
0.01  
0
1
-3  
10  
-2  
-1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 6 cm2  
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
5 / 15  
 
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
V(BR)DSS drain-source  
breakdown voltage  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
60  
-
-
V
V
VGSth  
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C  
voltage  
1.3  
1.7  
2.7  
IDSS  
IGSS  
drain leakage current  
gate leakage current  
VDS = 60 V; VGS = 0 V; Tj = 25 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
VGS = 10 V; VDS = 0 V; Tj = 25 °C  
VGS = -10 V; VDS = 0 V; Tj = 25 °C  
VGS = 10 V; ID = 3.5 A; Tj = 25 °C  
VGS = 10 V; ID = 3.5 A; Tj = 175 °C  
VGS = 4.5 V; ID = 3.1 A; Tj = 25 °C  
VDS = 10 V; ID = 3.5 A; Tj = 25 °C  
-
-
-
-
-
-
-
-
-
-
1
µA  
µA  
µA  
µA  
µA  
mΩ  
mΩ  
mΩ  
S
-
10  
-10  
1
-
-
-
-1  
49  
106  
64  
-
RDSon  
drain-source on-state  
resistance  
37  
80  
45  
18.2  
gfs  
forward  
transconductance  
RG  
gate resistance  
f = 1 MHz  
-
2
-
Ω
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
total gate charge  
VDS = 30 V; ID = 3.5 A; VGS = 10 V;  
Tj = 25 °C  
-
-
-
-
-
-
8.8  
1.1  
1.8  
450  
49  
13  
-
nC  
nC  
nC  
pF  
pF  
pF  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
-
VDS = 30 V; f = 1 MHz; VGS = 0 V;  
Tj = 25 °C  
-
Coss  
Crss  
-
reverse transfer  
capacitance  
30  
-
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 30 V; ID = 3.5 A; VGS = 10 V;  
RG(ext) = 6 Ω; Tj = 25 °C  
-
-
-
-
5
-
-
-
-
ns  
ns  
ns  
ns  
7
turn-off delay time  
fall time  
13  
4
Source-drain diode  
VSD  
source-drain voltage  
IS = 1.3 A; VGS = 0 V; Tj = 25 °C  
-
0.8  
1.2  
V
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
6 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
aaa-022662  
aaa-022663  
-3  
-4  
-5  
-6  
16  
10  
D
3.2 V  
I
D
I
(A)  
(A)  
12  
8
10 V  
4.5 V  
3.4 V  
min  
typ  
max  
10  
3.0 V  
2.8 V  
10  
10  
4
V
= 2.5 V  
GS  
4
0
0
1
2
3
5
0
1
2
3
V
(V)  
V
(V)  
DS  
GS  
Tj = 25 °C  
Tj = 25 °C; VDS = 10 V  
Fig. 6. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig. 7. Sub-threshold drain current as a function of  
gate-source voltage  
aaa-022664  
aaa-029371  
180  
200  
R
DSon  
(mΩ)  
2.5 V  
2.8 V  
3 V  
3.2 V  
R
DSon  
(mΩ)  
150  
150  
120  
90  
60  
30  
0
100  
50  
0
3.4 V  
T = 175 °C  
j
4.5 V  
T = 25 °C  
j
V
= 10 V  
GS  
0
4
8
12  
16  
0
2
4
6
8
10  
I
(A)  
V
(V)  
GS  
D
Tj = 25 °C  
ID = 3.1 A  
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function  
of drain current; typical values  
of gate-source voltage; typical values  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
7 / 15  
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
aaa-029372  
aaa-029373  
15  
3
2
1
0
I
a
D
(A)  
10  
5
0
T = 175 °C  
j
T = 25 °C  
j
0
1
2
3
4
-60  
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
VDS > ID × RDSon  
Fig. 10. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig. 11. Normalized drain-source on-state resistance  
as a function of junction temperature; typical  
values  
aaa-029374  
aaa-022669  
3
4
10  
C
iss  
V
GS(th)  
(V)  
C
(pF)  
3
2
10  
C
C
oss  
max  
2
rss  
10  
typ  
1
min  
0
-60  
1
-1  
10  
2
0
60  
120  
180  
1
10  
10  
T (°C)  
j
V
(V)  
DS  
ID = 250µA; VDS = VGS  
f = 1 MHz; VGS = 0 V  
Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances  
junction temperature  
as a function of drain-source voltage; typical  
values  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
8 / 15  
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
aaa-022670  
10  
V
GS  
V
DS  
(V)  
8
I
D
6
4
2
V
V
GS(pl)  
GS(th)  
V
GS  
Q
GS2  
Q
GS1  
0
0
Q
Q
GS  
GD  
2
4
6
8
Q
G
(nC)  
Q
G(tot)  
003aaa508  
VDS = 30 V; ID = 4 A  
Fig. 15. Gate charge waveform definitions  
Fig. 14. Gate-source voltage as a function of gate  
charge; typical values  
aaa-029375  
4
I
S
(A)  
3
2
1
0
T = 175 °C  
j
T = 25 °C  
j
0
0.4  
0.8  
1.2  
V
(V)  
SD  
VGS = 0 V  
Fig. 16. Source current as a function of source-drain voltage; typical values  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
9 / 15  
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
11. Test information  
t
t
1
2
P
duty cycle δ =  
t
2
t
1
t
006aaa812  
Fig. 17. Duty cycle definition  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
10 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
12. Package outline  
Plastic surface-mounted package; 3 leads  
SOT23  
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X  
0
1
2 mm  
scale  
Dimensions (mm are the original dimensions)  
Unit  
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1 0.1 0.48 0.15 3.0 1.4  
nom  
2.5 0.45 0.55  
2.1 0.15 0.45  
mm  
1.9 0.95  
0.2 0.1  
0.9  
0.38 0.09 2.8 1.2  
min  
sot023_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
14-06-19  
14-09-22  
SOT23  
TO-236AB  
Fig. 18. Package outline SOT23  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
11 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
13. Soldering  
3.3  
2.9  
1.9  
solder lands  
solder resist  
2
3
1.7  
solder paste  
occupied area  
0.6  
0.7  
(3×)  
(3×)  
Dimensions in mm  
0.5  
(3×)  
0.6  
(3×)  
1
sot023_fr  
Fig. 19. Reflow soldering footprint for SOT23  
2.2  
1.2  
(2×)  
1.4  
(2×)  
solder lands  
solder resist  
2.6  
4.6  
occupied area  
Dimensions in mm  
1.4  
preferred transport direction during soldering  
2.8  
4.5  
sot023_fw  
Fig. 20. Wave soldering footprint for SOT23  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
12 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
14. Revision history  
Table 8. Revision history  
Data sheet ID  
Release date  
20211129  
Data sheet status  
Change notice  
Supersedes  
PMV37ENE v.1  
Product data sheet  
-
-
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
13 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
15. Legal information  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Data sheet status  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
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and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
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or problem which is based on any weakness or default in the customer’s  
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Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
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with the same product type number(s) and title. A short data sheet is  
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products in automotive equipment or applications.  
In no event shall Nexperia be liable for any indirect, incidental, punitive,  
special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Trademarks  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
14 / 15  
 
Nexperia  
PMV37ENE  
60 V, N-channel Trench MOSFET  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 3  
9. Thermal characteristics............................................... 5  
10. Characteristics............................................................6  
11. Test information........................................................10  
12. Package outline........................................................ 11  
13. Soldering................................................................... 12  
14. Revision history........................................................13  
15. Legal information......................................................14  
© Nexperia B.V. 2021. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 29 November 2021  
©
PMV37ENE  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2021. All rights reserved  
Product data sheet  
29 November 2021  
15 / 15  

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