PMXB65ENE [NEXPERIA]
30 V, N-channel Trench MOSFETProduction;型号: | PMXB65ENE |
厂家: | Nexperia |
描述: | 30 V, N-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:740K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PMXB65ENE
30 V, N-channel Trench MOSFET
3 November 2016
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3
(SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
Trench MOSFET technology
•
•
•
•
Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV
Very low Drain-Source on-state resistance RDSon = 44 mΩ
3. Applications
•
•
•
•
Low-side load switch and charging switch for portable devices
Power management in battery-driven portables
LED driver
DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
VGS
-20
-
20
V
[1]
ID
VGS = 10 V; Tamb = 25 °C
3.2
A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
-
44
67
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
D
G
S
D
D
gate
1
2
source
drain
drain
3
4
3
G
4
2
S
Transparent top view
017aaa255
DFN1010D-3 (SOT1215)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PMXB65ENE
DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm
SOT1215
7. Marking
Table 4. Marking codes
Type number
Marking code
PMXB65ENE
00 10 00
READING
DIRECTION
MARKING CODE
(EXAMPLE)
YEAR DATE
CODE
VENDOR CODE
PIN 1
INDICATION MARK
MARK-FREE AREA
READING EXAMPLE:
11
01
10
aaa-008041
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
2 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
VGS
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
-
3.2
A
-
2.5
A
IDM
Ptot
peak drain current
-
12.8
0.4
A
[2]
[1]
total power dissipation
-
W
W
W
°C
°C
°C
-
1.07
8.33
150
150
150
Tsp = 25 °C
-
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
Tamb
Tstg
Source-drain diode
IS source current
[1]
Tamb = 25 °C
-
0.9
A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 2. Normalized total power dissipation as a
function of junction temperature
Fig. 3. Normalized continuous drain current as a
function of junction temperature
©
PMXB65ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
3 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
aaa-008875
2
10
l
D
(A)
10
t
t
= 10 µs
p
p
= 100 µs
= 1 ms
1
t
p
t
= 10 ms
DC; T = 25 °C
sp
p
-1
10
t
= 100 ms
p
DC; T
= 25 °C;
amb
2
drain mounting pad 6 cm
-2
10
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
4 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
271
102
Max
312
117
Unit
K/W
K/W
[1]
[2]
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
10
15
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
aaa-008918
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
2
0.33
10
0.25
0.2
0.1
0.05
0.02
0
10
0.01
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-008919
3
10
duty cycle = 1
0.75
Z
th(j-a)
0.5
0.33
(K/W)
2
10
10
0.25
0.2
0.02
0.01
0.1
0
0.05
1
10
-3
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 6 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
5 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS=VGS; Tj = 25 °C
voltage
1.4
2
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 25 °C
VGS = 10 V; ID = 3.2 A; Tj = 150 °C
VGS = 4.5 V; ID = 2.9 A
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
mΩ
mΩ
S
-
10
-10
1
-
-
-
-1
67
107
79
-
RDSon
drain-source on-state
resistance
44
71
56
26
gfs
forward
VDS = 10 V; ID = 3.2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
-
1
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
Tj = 25 °C
-
-
-
-
-
-
6
11
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
0.7
0.9
295
40
31
-
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; ID = 3.2 A; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
3
-
-
-
-
ns
ns
ns
ns
12
11
3
turn-off delay time
fall time
Source-drain diode
VSD
source-drain voltage
IS = 0.9 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
©
PMXB65ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
6 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
aaa-008889
aaa-021517
-3
-4
-5
-6
16
10
D
I
D
I
(A)
4.5 V
(A)
10 V
4.0 V
12
10
3.5 V
3.0 V
2.5 V
8
4
0
min
typ
max
10
10
V
= 2.25 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
2.0
2.5
(V)
V
(V)
V
DS
GS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-016523
aaa-008896
250
250
2.5 V
3.5 V
3.0 V
3.3 V
R
R
DSon
(mΩ)
DSon
(mΩ)
200
200
2.25 V
3.8 V
150
100
50
150
100
50
4.0 V
4.5 V
T = 150 °C
j
V
GS
= 10 V
T = 25 °C
j
0
0
0
4
8
12
16
0
2
4
6
8
10
(V)
I
D
(A)
V
GS
Tj = 25 °C
ID = 3.2 A
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
7 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
aaa-008905
aaa-008897
12
2
1.5
1
a
I
D
(A)
8
4
0
T = 25 °C
j
0.5
0
T = 150 °C
j
0
1
2
3
4
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-021518
aaa-008909
3
3
10
C
(pF)
V
GS(th)
(V)
C
iss
2
2
1
0
10
max
C
oss
C
rss
typ
10
min
1
0,1
-60
0
60
120
180
1
10
100
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of Fig. 14. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
8 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
aaa-008916
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0
2
4
6
Q
(nC)
G
ID = 3.2 A; VDS = 15 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-008917
4
I
S
(A)
3
2
1
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
©
PMXB65ENE
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Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
9 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
12. Package outline
DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads;
3 terminals; body: 1.1 x 1.0 x 0.37 mm
SOT1215
visible depend upon
used manufacturing
technology (2x)
visible depend upon
solderable lead
end, protrusion
max. 0.02 mm (3x)
used manufacturing
technology (4x)
e
pin 1
index area
b (2x)
1
2
L (2x)
E
E
1
e
1
L
1
3
D
A
b
1
1
A
D
1
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
b
D
D
1
E
E
e
e
1
L
L
1
1
1
1
min 0.34
0.22 0.245 1.05 0.87 0.95 0.16
0.25 0.275 1.10 0.90 1.00 0.19 0.75 0.1 0.20 0.225
0.40 0.04 0.30 0.325 1.15 0.95 1.05 0.24 0.25 0.275
0.17 0.195
nom
max
mm
0.37
Note
1. Dimension A is including plating thickness.
sot1215_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
13-03-05
13-03-06
SOT1215
Fig. 19. Package outline DFN1010D-3 (SOT1215)
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
10 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1010D-3 package
SOT1215
1.2
0.45 (2x)
0.35 (2x)
0.3
1.1
0.25 (2x)
0.4
0.75
0.3 0.4
0.5 1.3
0.3 0.4
0.5
0.4
0.5
1.5 1.4
0.3
0.4
0.5
1.3
solder land
solder land plus solder paste
solder resist
occupied area
Dimensions in mm
12-11-23
Issue date
sot1215_fr
13-03-06
Fig. 20. Reflow soldering footprint for DFN1010D-3 (SOT1215)
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
11 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
PMXB65ENE v.4
Modifications:
Release date
20161103
Data sheet status
Change notice
Supersedes
Product data sheet
-
PMXB65ENE v.3
•
Maximum value of gate-source threshold voltage revised
PMXB65ENE v.3
PMXB65ENE v.2
PMXB65ENE v.1
20150520
20130924
20130910
Product data sheet
Product data sheet
Product data sheet
-
-
-
PMXB65ENE v.2
PMXB65ENE v.1
-
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
12 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
status [1] [2]
Product
status [3]
Definition
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1] Please consult the most recently issued document before initiating or
completing a design.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Customers are responsible for the design and operation of their
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accepts no liability for any assistance with applications or
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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damage, costs or problem which is based on any weakness or default
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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and the products or of the application or use by customer’s third party
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with the same product type number(s) and title. A short data sheet is
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relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
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Nexperia accepts no liability for inclusion and/or use of non-
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contract or any other legal theory.
automotive qualified products in automotive equipment or applications.
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
13 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
14 / 15
Nexperia
PMXB65ENE
30 V, N-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................6
11. Test information......................................................... 9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................12
15. Legal information..................................................... 13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 03 November 2016
©
PMXB65ENE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
3 November 2016
15 / 15
相关型号:
PMZ1000UN
480mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, LEADLESS, PLASTIC, SC-101, 3 PIN
NXP
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