PSMN005-75P [NEXPERIA]
N-channel TrenchMOS SiliconMAX standard level FETProduction;
| 型号： | PSMN005-75P |
| 厂家： | 
Nexperia |
| 描述： | N-channel TrenchMOS SiliconMAX standard level FETProduction 局域网 开关 脉冲 晶体管 |
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PSMN005-75P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 01 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
Suitable for high frequency
applications due to fast switching
characteristics
on-state resistance
1.3 Applications
High frequency computer motherboard
OR-ing applicationss
DC-to-DC convertors
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
75
75
V
A
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
230
-
W
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 75 A;
VDS = 60 V; Tj = 25 °C;
see Figure 11
50
nC
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 25 A;
-
4.3
5
mΩ
on-state resistance
Tj = 25 °C; see Figure 9 and 10
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
drain
3
G
mb
mbb076
S
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN005-75P
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
2 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
75
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ
-
VDGR
VGS
-
75
V
-20
-
20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
75
A
-
75
A
IDM
Ptot
Tstg
Tj
peak drain current
-
400
230
175
175
30
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
V
-55
-55
-30
VGSM
peak gate-source voltage pulsed; tp ≤ 50 µs; δ 25 %; Tj ≤ 150 °C
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
75
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
400
Avalanche ruggedness
EDS(AL)S
non-repetitive
drain-source avalanche
energy
VGS = 10 V; Tj(init) = 25 °C; ID = 75 A; Vsup = 15 V;
unclamped; tp = 0.1 ms; RGS = 50 Ω
-
-
500
75
mJ
A
IDS(AL)S
non-repetitive
drain-source avalanche
current
VGS = 10 V; Vsup = 15 V; RGS = 50 Ω;
Tj(init) = 25 °C; unclamped
03ah89
03aa16
120
120
Ider
P
der
(%)
(%)
80
40
0
80
40
0
0
50
100
150
200
mb (°C)
0
50
100
150
200
T
T
mb
(°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
3 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03ah91
103
Limit RDSon = VDS / ID
ID
(A)
10 μs
tp =
102
100 μs
DC
1 ms
10
10 ms
0.1 s
1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
4 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 4
-
-
0.65
K/W
Rth(j-a)
thermal resistance from junction to ambient vertical in still air
-
60
-
K/W
03af48
1
δ = 0.5
Z
th(j-mb)
(K/W)
0.2
−1
10
10
10
0.1
0.05
0.02
t
p
P
−2
−3
δ =
T
single pulse
t
t
p
T
1
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
5 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
67
75
1
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 8
2
-
3
-
4
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 8
4.4
IDSS
drain leakage current
gate leakage current
VDS = 75 V; VGS = 0 V; Tj = 25 °C
VDS = 75 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.02
-
1
µA
µA
nA
nA
500
100
100
IGSS
10
10
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 9 and 10
9.25
10.75 mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9 and 10
-
4.3
5
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 75 A; VDS = 60 V; VGS = 10 V;
Tj = 25 °C; see Figure 11
-
-
-
-
-
-
165
32
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
50
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 12
8250
920
470
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 15 V; RL = 1.25 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
37
-
-
-
-
ns
ns
ns
ns
73
turn-off delay time
fall time
144
74
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
-
-
-
V
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
6 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03aa35
03ah92
−1
10
300
7
6.5
6
VGS (V) =
20
10
8
I
D
(A)
ID
(A)
min
typ
max
−2
−3
−4
−5
−6
10
7.5
200
10
10
10
10
5.5
5
100
4.5
0
0
0.5
1
1.5
2
DS (V)
0
2
4
6
V
V
GS
(V)
Fig 5. Sub-threshold drain current as a function of
gate-source voltage
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
03ah94
03aa32
5
100
V
GS(th)
(V)
ID
(A)
4
3
2
1
0
max
75
50
typ
min
25 °C
Tj = 175 °C
25
0
0
2
4
6
−60
0
60
120
180
V
GS (V)
T (°C)
j
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Gate-source threshold voltage as a function of
junction temperature
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
7 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03ah93
03aj03
2.5
0.015
VGS (V) =
Tj = 25 °C
a
RDSon
(Ω)
5
5.5
2
0.01
6
1.5
1
6.5
0.005
0.5
7 8 10 20
0
0
−60
0
100
200
300
0
60
120
180
ID (A)
T (°C)
j
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
03ah98
03ah97
10
105
ID = 75 A
VGS
(V)
C
(pF)
VDD = 60 V
Tj = 25 °C
8
6
4
2
0
104
Ciss
103
Coss
Crss
102
10-1
0
50
100
150
200
G (nC)
1
10
102
Q
VDS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
8 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
03ah96
100
VGS = 0 V
IS
(A)
75
50
25
0
175 °C
Tj = 25 °C
0.0
0.5
1.0
1.5
V
SD (V)
Fig 13. Source current as a function of source-drain voltage; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
9 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 14. Package outline SOT78 (TO-220AB)
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
10 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN005-75P_1
20091117
Product data sheet
-
-
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
11 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
©
Nexperia B.V. 2017. All rights reserved
PSMN005-75P_1
Product data sheet
Rev. 01 — 17 November 2009
12 of 13
PSMN005-75P
Nexperia
N-channel TrenchMOS SiliconMAX standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .5
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 17 November 2009
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