PSMN009-100P [NEXPERIA]

N-channel TrenchMOS SiliconMAX standard level FETProduction;
PSMN009-100P
型号: PSMN009-100P
厂家: Nexperia    Nexperia
描述:

N-channel TrenchMOS SiliconMAX standard level FETProduction

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PSMN009-100P  
N-channel TrenchMOS SiliconMAX standard level FET  
Rev. 4 — 27 December 2011  
Product data sheet  
1. Product profile  
1.1 General description  
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in  
a plastic package using TrenchMOS technology. This product is designed and qualified for  
use in computing, communications, consumer and industrial applications only.  
1.2 Features and benefits  
Low conduction losses due to low  
Suitable for high frequency  
applications due to fast switching  
characteristics  
on-state resistance  
1.3 Applications  
High frequency computer motherboard  
OR-ing applicationss  
DC-to-DC convertors  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
75  
Unit  
V
drain-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
-
-
-
-
ID  
Tmb = 25 °C; VGS = 10 V; see Figure 1;  
see Figure 3  
A
Ptot  
total power dissipation  
Tmb = 25 °C; see Figure 2  
-
-
-
230  
8.8  
W
Static characteristics  
RDSon  
drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 9; see Figure 10  
7.5  
mΩ  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 75 A; VDS = 80 V;  
Tj = 25 °C; see Figure 11  
-
44  
-
nC  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
2. Pinning information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
G
D
S
D
gate  
mb  
D
S
2
drain  
3
source  
G
mb  
mounting base; connected to drain  
mbb076  
1
2 3  
SOT78 (TO-220AB)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PSMN009-100P  
TO-220AB  
plastic single-ended package; heatsink mounted; 1 mounting  
hole; 3-lead TO-220AB  
SOT78  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
2 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
100  
100  
20  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
drain current  
Tj 25 °C; Tj 175 °C  
Tj 175 °C; Tj 25 °C; RGS = 20 kΩ  
-
VDGR  
VGS  
-
V
-20  
V
ID  
VGS = 10 V; Tmb = 100 °C; see Figure 1  
-
-
65  
A
VGS = 10 V; Tmb = 25 °C; see Figure 1;  
see Figure 3  
75  
A
IDM  
Ptot  
Tstg  
Tj  
peak drain current  
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3  
-
400  
230  
175  
175  
30  
A
total power dissipation  
storage temperature  
junction temperature  
peak gate-source voltage  
Tmb = 25 °C; see Figure 2  
-
W
°C  
°C  
V
-55  
-55  
-30  
VGSM  
pulsed; tp 50 µs; Tj 150 °C; δ = 25 %  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
-
-
75  
A
A
ISM  
pulsed; tp 10 µs; Tmb = 25 °C  
400  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-source  
VGS = 10 V; Tj(init) = 25 °C; ID = 35 A;  
Vsup = 15 V; unclamped; tp = 0.1 ms;  
RGS = 50 Ω  
-
-
120  
75  
mJ  
A
avalanche energy  
IDS(AL)S  
non-repetitive drain-source  
avalanche current  
VGS = 10 V; Vsup = 15 V; RGS = 50 ;  
Tj(init) = 25 °C; unclamped  
03aa16  
03ah99  
120  
120  
I
der  
(%)  
P
(%)  
der  
100  
80  
80  
60  
40  
40  
20  
0
0
0
30  
60  
90  
120  
150  
T
180  
(°C)  
0
50  
100  
150  
200  
T
(°C)  
mb  
mb  
Fig 1. Normalized continuous drain current as a  
function of mounting base temperature  
Fig 2. Normalized total power dissipation as a  
function of mounting base temperature  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
3 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
03ai01  
103  
ID  
Limit RDSon = VDS / ID  
(A)  
μ
tp =10  
s
102  
10  
1
μ
100  
s
1 ms  
DC  
10 ms  
100 ms  
10-1  
10-1  
1
10  
102  
103  
V DS (V)  
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
4 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
5. Thermal characteristics  
Table 5.  
Symbol  
Rth(j-mb)  
Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from junction to mounting  
base  
see Figure 4  
-
-
0.65  
K/W  
Rth(j-a)  
thermal resistance from junction to ambient  
vertical in free air  
-
60  
-
K/W  
03af48  
1
δ = 0.5  
Z
th(j-mb)  
(K/W)  
0.2  
1  
10  
10  
10  
0.1  
0.05  
0.02  
t
p
P
2  
3  
δ =  
T
single pulse  
t
t
p
T
1
6  
5  
4  
3  
2  
1  
10  
10  
10  
10  
10  
10  
10  
t
(s)  
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
5 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS  
drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C  
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C  
90  
100  
1
-
-
-
-
-
-
V
V
V
VGS(th)  
gate-source threshold voltage  
ID = 1 mA; VDS = VGS; Tj = 175 °C;  
see Figure 8  
ID = 1 mA; VDS = VGS; Tj = 25 °C;  
see Figure 8  
2
-
3
-
4
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;  
see Figure 8  
4.4  
IDSS  
drain leakage current  
gate leakage current  
VDS = 30 V; VGS = 0 V; Tj = 175 °C  
VDS = 30 V; VGS = 0 V; Tj = 25 °C  
VGS = 20 V; VDS = 0 V; Tj = 25 °C  
VGS = -20 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
-
500  
1
µA  
µA  
nA  
nA  
mΩ  
0.02  
10  
10  
IGSS  
100  
100  
RDSon  
drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 175 °C;  
see Figure 9; see Figure 10  
20.25 23.8  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
see Figure 9; see Figure 10  
-
7.5  
8.8  
mΩ  
Dynamic characteristics  
QG(tot)  
QGS  
QGD  
Ciss  
Coss  
Crss  
td(on)  
tr  
total gate charge  
ID = 75 A; VDS = 80 V; VGS = 10 V;  
Tj = 25 °C; see Figure 11  
-
-
-
-
-
-
-
-
-
-
156  
31  
-
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
reverse transfer capacitance  
turn-on delay time  
rise time  
44  
VDS = 25 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; see Figure 12  
8250  
620  
300  
38  
VDS = 15 V; RL = 1.25 ; VGS = 10 V;  
RG(ext) = 6 ; Tj = 25 °C; ID = 12 A  
59  
td(off)  
tf  
turn-off delay time  
fall time  
120  
43  
Source-drain diode  
VSD  
source-drain voltage  
IS = 25 A; VGS = 0 V; Tj = 25 °C;  
see Figure 13  
-
0.8  
1.2  
V
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
6 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
03am56  
03am54  
80  
50  
I
10 V 6 V 5.6 V 5.4 V  
V
> I x R  
D DSon  
T = 25 C  
°
D
DS  
j
I
D
(A)  
(A)  
40  
5.2 V  
5 V  
60  
30  
20  
10  
0
40  
20  
0
4.8 V  
4.6 V  
4.4 V  
175 °C  
T = 25 °C  
j
V
= 4.2 V  
GS  
0
0.2  
0.4  
0.6  
0.8  
1
(V)  
0
2
4
6
V
V
(V)  
DS  
GS  
Fig 5. Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6. Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
03aa35  
03aa32  
1  
10  
5
I
V
D
GS(th)  
(V)  
(A)  
min  
typ  
max  
2  
3  
4  
5  
6  
10  
10  
10  
10  
10  
4
max  
3
typ  
2
min  
1
0
0
2
4
6
60  
0
60  
120  
180  
V
(V)  
T (°C)  
j
GS  
Fig 7. Sub-threshold drain current as a function of  
gate-source voltage  
Fig 8. Gate-source threshold voltage as a function of  
junction temperature  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
7 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
03ai03  
03aa29  
3
15  
5.5 V  
5 V  
R
DSon  
(mΩ)  
a
V
= 6 V  
GS  
12.5  
2
8 V  
10  
1
0
20 V  
10 V  
7.5  
5
0
50  
100  
150  
200  
-60  
0
60  
120  
180  
T ( C)  
I
(A)  
°
j
D
Fig 9. Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 10. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
03ai07  
03ai08  
5
10  
10  
V
GS  
C
(V)  
8
(pF)  
C
4
iss  
10  
6
4
2
3
10  
10  
C
C
oss  
rss  
2
0
1  
2
0
50  
100  
150  
200  
10  
1
10  
10  
V
(V)  
Q
(nC)  
DS  
G
Fig 11. Gate-source voltage as a function of gate  
charge; typical values  
Fig 12. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
8 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
03ai06  
100  
I
S
(A)  
80  
T = 175 °C  
j
60  
40  
25 °C  
20  
0
0
0.5  
1.0  
1.5  
V
(V)  
SD  
Fig 13. Source current as a function of source-drain voltage; typical values  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
9 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
7. Package outline  
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB  
SOT78  
E
p
A
A
1
q
mounting  
D
1
base  
D
(1)  
(1)  
L
1
L
2
Q
(2)  
b
1
L
(3×)  
(2)  
b
2
(2×)  
1
2
3
b(3×)  
c
e
e
0
5
10 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
2
(2)  
(2)  
(1)  
1
UNIT  
mm  
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.  
4.7  
4.1  
1.40  
1.25  
0.9  
0.6  
1.6  
1.0  
1.3  
1.0  
0.7  
0.4  
16.0  
15.2  
6.6  
5.9  
10.3  
9.7  
15.0 3.30  
12.8 2.79  
3.8  
3.5  
3.0  
2.7  
2.6  
2.2  
2.54  
3.0  
Notes  
1. Lead shoulder designs may vary.  
2. Dimension includes excess dambar.  
REFERENCES  
OUTLINE  
VERSION  
EUROPEAN  
PROJECTION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
08-04-23  
08-06-13  
SOT78  
SC-46  
3-lead TO-220AB  
Fig 14. Package outline SOT78 (TO-220AB)  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
10 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
8. Revision history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PSMN009-100P v.4  
Modifications:  
20111227  
Product data sheet  
-
PSMN009-100P v.3  
Various changes to content.  
20111121 Product data sheet  
PSMN009-100P v.3  
-
PSMN009-100P v.2  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
11 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
9. Legal information  
9.1 Data sheet status  
Document status [1] [2]  
Product status [3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term 'short data sheet' is explained in section "Definitions".  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
status information is available on the Internet at URL http://www.nexperia.com.  
Right to make changes — Nexperia reserves the right to make  
9.2 Definitions  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Preview — The document is a preview version only. The document is still  
subject to formal approval, which may result in modifications or additions.  
Nexperia does not give any representations or warranties as to  
the accuracy or completeness of information included herein and shall have  
no liability for the consequences of use of such information.  
Suitability for use — Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
malfunction of a Nexperia product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
damage. Nexperia accepts no liability for inclusion and/or use of  
Nexperia products in such equipment or applications and  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
therefore such inclusion and/or use is at the customer’s own risk.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification — The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the Nexperia  
product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
9.3 Disclaimers  
Limited warranty and liability — Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the customer’s applications and products using Nexperia  
products in order to avoid a default of the applications and  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation - lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the Terms and conditions of commercial sale of Nexperia.  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
12 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
Terms and conditions of commercial sale — Nexperia  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards, customer  
(a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies Nexperia for any  
liability, damages or failed product claims resulting from customer design and  
use of the product for automotive applications beyond Nexperia’s  
standard warranty and Nexperia’s product specifications.  
products are sold subject to the general terms and conditions of commercial  
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
9.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Export control — This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from competent authorities.  
Non-automotive qualified products — Unless this data sheet expressly  
states that this specific Nexperia product is automotive qualified,  
the product is not suitable for automotive use. It is neither qualified nor tested  
in accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of  
non-automotive qualified products in automotive equipment or applications.  
10. Contact information  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
PSMN009-100P  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 4 — 27 December 2011  
13 of 14  
PSMN009-100P  
Nexperia  
N-channel TrenchMOS SiliconMAX standard level FET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description . . . . . . . . . . . . . . . . . . . . . .1  
Features and benefits. . . . . . . . . . . . . . . . . . . . .1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data . . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering information. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics . . . . . . . . . . . . . . . . . . .5  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .13  
© Nexperia B.V. 2017. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 27 December 2011  

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