PSMN013-80YS [NEXPERIA]
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFETProduction;
| 型号： | PSMN013-80YS |
| 厂家： | 
Nexperia |
| 描述： | N-channel LFPAK 80 V 12.9 mΩ standard level MOSFETProduction |
| 文件： | 总13页 (文件大小：728K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN013-80YS
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Rev. 01 — 25 June 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
Advanced TrenchMOS provides low
Improved mechanical and thermal
RDSon and low gate charge
characteristics
High efficiency gains in switching
LFPAK provides maximum power
power converters
density in a Power SO8 package
1.3 Applications
DC-to-DC converters
Lithium-ion battery protection
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
Min
Typ
Max Unit
VDS
ID
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
-
-
-
-
-
80
V
drain current
-
60
A
Ptot
Tj
total power dissipation
junction temperature
-
106
175
W
°C
-55
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
-
-
70
mJ
avalanche energy
RGS = 50 Ω; unclamped
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
-
-
8
-
-
nC
nC
QG(tot)
total gate charge
VGS = 10 V; ID = 25 A; VDS = 40 V; see Figure 14;
see Figure 15
37
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 100 °C; see Figure 12
VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 13
-
-
-
19.8 mΩ
12.9 mΩ
9.7
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
2
3
G
4
mbb076
S
mb
mounting base; connected to
drain
1
2 3 4
SOT669
(LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
PSMN013-80YS
LFPAK
SOT669
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
80
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 150 °C
Tj ≥ 25 °C; Tj ≤ 150 °C; RGS = 20 kΩ
-
V
VDGR
VGS
-
80
V
-20
20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
42
A
-
60
A
IDM
peak drain current
-
233
106
175
175
260
A
Ptot
Tstg
Tj
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
°C
-55
-55
-
junction temperature
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
60
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
233
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 55 A; Vsup ≤ 80 V;
-
70
mJ
drain-source avalanche RGS = 50 Ω; unclamped
energy
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
2 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad230
03aa16
120
60
ID
P
(%)
der
(A)
80
40
20
40
0
0
0
50
100
150
200
0
50
100
150
200
Tmb (°C)
T
mb
(°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aad314
103
ID
10μs
Limit RDSon = VDS / ID
(A)
102
100μs
10
1
1ms
DC
10ms
100ms
10-1
1
10
102
103
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
3 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 4
junction to mounting
base
-
0.54
1.4
K/W
003aac657
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
10-1
10-2
10-3
0.1
0.05
0.02
tp
δ =
P
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
4 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
6. Characteristics
Table 6.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
73
80
1
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C; see
voltage
Figure 10; see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; see
Figure 10; see Figure 11
-
-
4.6
4
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C; see
Figure 10; see Figure 11
2
3
IDSS
drain leakage current
gate leakage current
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 80 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
3
µA
µA
nA
nA
mΩ
40
IGSS
100
100
31
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 175 °C; see
Figure 12
VGS = 10 V; ID = 15 A; Tj = 100 °C; see
Figure 12
-
-
-
-
19.8
12.9
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 15 A; Tj = 25 °C; see
9.7
0.68
Figure 13
RG
internal gate resistance f = 1 MHz
(AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
31
37
-
-
nC
nC
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
QGS
gate-source charge
ID = 25 A; VDS = 40 V; VGS = 10 V; see
Figure 14; see Figure 15
-
-
11
7
-
-
nC
nC
QGS(th)
pre-threshold
gate-source charge
QGS(th-pl)
post-threshold
-
4
-
nC
gate-source charge
QGD
gate-drain charge
-
-
8
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 40 V
4.8
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 40 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
-
2420
224
-
-
-
pF
pF
pF
reverse transfer
capacitance
125
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
20
15
37
10
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
5 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
Table 6.
Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; see
Figure 17
-
0.84
1.2
V
trr
reverse recovery time
recovered charge
IS = 50 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 40 V
-
-
52
91
-
-
ns
Qr
nC
003aad181
4000
003aad187
Ciss
60
ID
(A)
10
6
5.5
20
8
C
50
(pF)
5
3000
40
30
20
10
0
2000
Crss
4.5
1000
VGS (V) = 4
1.5
0
0
0.5
1
2
0
3
6
9
12
V
DS (V)
VGS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aad183
003aad189
70
ID
45
RDSon
(A)
60
(mΩ)
35
25
15
5
50
40
30
Tj = 150 °C
20
Tj = 175 °C
10
Tj = 25 °C
0
0
2
4
6
0
5
10
15
20
V
GS (V)
VGS (V)
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
6 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad188
03aa35
−1
10
80
I
D
gfs
(A)
(S)
min
typ
max
−2
−3
−4
−5
−6
10
60
40
20
10
10
10
10
0
0
20
40
60
80
0
2
4
6
ID (A)
V
GS
(V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aad280
003aad045
5
2.5
V
GS(th)
(V)
a
4
3
2
1
0
2.0
max
1.5
1.0
0.5
0.0
typ
min
−60
0
60
120
180
-60 -30
0
30
60
90 120 150 180
T (°C)
j
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
7 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad182
25
VGS (V) = 5
V
DS
RDSon
(mΩ)
I
D
20
15
10
V
GS(pl)
5.5
6
V
GS(th)
V
GS
8
10
20
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
5
0
Fig 14. Gate charge waveform definitions
20
40
60
ID (A)
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
003aad185
003aad186
10
104
VGS
(V)
C
(pF)
8
64V
16V
Ciss
VDS = 40V
6
103
4
2
0
Coss
Crss
102
10-1
0
10
20
30
40
1
10
102
Q
G (nC)
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
8 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
003aad184
100
IS
(A)
80
60
40
20
0
Tj = 150 °C
Tj = 175 °C
Tj = 25 °C
0
0.3
0.6
0.9
1.2
V
SD (V)
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
9 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
b
b
2
1
2
L
3
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10
0.35 3.62 2.0 0.7 0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
8°
0°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 18. Package outline SOT669 (LFPAK)
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
10 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN013-80YS_1
20090625
Product data sheet
-
-
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
11 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
9. Legal information
9.1 Data sheet status
Document status [1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Applications — Applications that are described herein for any of these
9.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
therefore such inclusion and/or use is at the customer’s own risk.
10. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
©
Nexperia B.V. 2017. All rights reserved
PSMN013-80YS_1
Product data sheet
Rev. 01 — 25 June 2009
12 of 13
PSMN013-80YS
Nexperia
N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 25 June 2009
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