PSMN017-30PL [NEXPERIA]
N-channel 30 V 17 mΩ logic level MOSFET in TO220Production;
| 型号： | PSMN017-30PL |
| 厂家： | 
Nexperia |
| 描述： | N-channel 30 V 17 mΩ logic level MOSFET in TO220Production |
| 文件： | 总14页 (文件大小：789K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN017-30PL
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Rev. 2 — 3 April 2012
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for logic level gate drive
and conduction losses
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
30
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
-
-
-
-
-
[1]
ID
-
32
A
Ptot
total power dissipation
junction temperature
-
45
W
Tj
-55
175
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
18.7
13.4
23.4
17
mΩ
mΩ
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 13
Dynamic characteristics
QGD
gate-drain charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
-
-
1.94
5.1
-
-
nC
nC
QG(tot)
total gate charge
VGS = 4.5 V; ID = 10 A; VDS = 15 V;
see Figure 14; see Figure 15
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
-
13
mJ
[1] Continuous current is limited by package.
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
S
2
drain
3
source
G
mb
mounting base; connected to drain
mbb076
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN017-30PL
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
30
V
-20
20
V
[1]
[1]
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
-
26.9
32
A
-
A
IDM
Ptot
Tstg
Tj
peak drain current
-
152
45
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
-55
-55
175
175
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
32
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
152
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 32 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped
-
13
mJ
[1] Continuous current is limited by package.
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
2 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
003aaj411
03aa16
120
40
I
D
P
der
(A)
(%)
(1)
30
80
20
10
40
0
0
0
50
100
150
200
(°C)
0
50
100
150
200
T
T
(°C)
mb
mb
(1) Capped at 32A due to package
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaj413
103
I
D
(A)
Limit R
= V / I
DS D
102
10
DSon
t =10 μs
p
100 μs
1 ms
DC
10 ms
1
100 ms
10-1
10-1
1
10
102
V
(V)
DS
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
3 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
3.24
60
Max
3.31
-
Unit
K/W
K/W
thermal resistance from junction to mounting base see Figure 4
thermal resistance from junction to ambient vertical in free air
-
-
003aaj414
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
tp
δ =
P
10-1
T
0.02
t
tp
single shot
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
4 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
30
27
1.3
-
-
V
V
V
-
-
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 10; see Figure 11
1.7
2.15
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 11
0.5
-
-
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 11
2.45
IDSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.3
-
1
µA
µA
nA
nA
mΩ
50
IGSS
10
10
-
100
100
43.2
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 4.5 V; ID = 10 A; Tj = 25 °C;
see Figure 13
-
-
-
-
-
18.7
24
23.4
31.5
23.5
17
mΩ
mΩ
mΩ
mΩ
Ω
VGS = 10 V; ID = 10 A; Tj = 175 °C;
see Figure 12
VGS = 10 V; ID = 10 A; Tj = 100 °C;
see Figure 12
-
VGS = 10 V; ID = 10 A; Tj = 25 °C;
13.4
2.03
see Figure 13
RG
gate resistance
f = 1 MHz
-
Dynamic characteristics
QG(tot)
total gate charge
ID = 10 A; VDS = 15 V; VGS = 10 V;
see Figure 14; see Figure 15
-
-
-
10.7
9.55
5.1
-
-
-
nC
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
see Figure 14; see Figure 15
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
QGS
gate-source charge
ID = 10 A; VDS = 15 V; VGS = 4.5 V;
see Figure 14; see Figure 15
-
-
1.52
1
-
-
nC
nC
QGS(th)
pre-threshold gate-source
charge
QGS(th-pl)
post-threshold gate-source
charge
-
0.5
-
nC
QGD
gate-drain charge
-
-
1.94
2.86
-
-
nC
V
VGS(pl)
gate-source plateau voltage
ID = 10 A; VDS = 15 V; see Figure 14;
see Figure 15
Ciss
Coss
Crss
input capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 16
-
-
-
552
127
64
-
-
-
pF
pF
pF
output capacitance
reverse transfer capacitance
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
5 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Table 6.
Symbol
td(on)
tr
Characteristics …continued
Parameter
Conditions
Min
Typ
10.7
9.2
Max
Unit
ns
turn-on delay time
rise time
VDS = 15 V; RL = 1.5 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
-
-
-
-
-
-
-
ns
td(off)
tf
turn-off delay time
fall time
11.4
5.1
ns
ns
Source-drain diode
VSD
source-drain voltage
IS = 10 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
0.89
1.2
V
trr
reverse recovery time
recovered charge
IS = 10 A; dIS/dt = -100 A/µs;
-
-
17.3
6.5
-
-
ns
VGS = 0 V; VDS = 15 V
Qr
nC
003aaj415
003aaj418
30
30
10
4.5
I
I
D
D
3.5
(A)
(A)
20
20
3
2.8
10
10
V
(V) = 2.4
T = 175
j
°C
T = 25 °C
GS
j
0
0
0
1
2
3
4
0
1
2
3
4
V
(V)
V
(V)
DS
GS
Tj = 25 °C
Fig 5. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
6 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
003aaj532
003aaj417
1000
30
C
(pF)
C
iss
g
fs
(S)
800
600
400
200
20
10
C
rss
0
0
0
3
6
9
12
0
10
20
30
V
(V)
I
(A)
GS
D
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig 8. Forward transconductance as a function of
drain current; typical values
003aaj416
003aab271
40
10-1
ID
R
(mΩ)
(A)
10-2
DSon
30
min
typ
max
10-3
10-4
10-5
10-6
20
10
0
1
2
V
GS (V)
3
0
4
8
12
16
V
(V)
GS
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
7 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
003aac982
03aa27
2
3
a
VGS(th)
(V)
max
1.5
2
typ
1
0.5
0
min
1
0
-60
−60
0
60
120
180
0
60
120
180
T ( C)
°
j
Tj (°C)
Fig 11. Gate-source threshold voltage as a function of
junction temperature
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaj421
60
V
3
3.5
DS
R
DSon
(mΩ)
I
D
40
V
GS(pl)
V
GS(th)
GS
V
20
Q
Q
GS1
GS2
4.5
Q
Q
GD
GS
V
(V) = 10
Q
G(tot)
GS
003aaa508
0
5
10
15
20
25
30
I
(A)
D
Tj = 25 °C
Fig 13. Drain-source on-state resistance as a function
of drain current; typical values
Fig 14. Gate charge waveform definitions
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
8 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
003aaj423
003aaj424
10
103
V
GS
(V)
C
iss
6 V
8
C
(pF)
6
4
2
24 V
C
oss
102
V
= 15V
DS
C
rss
0
0
10
4
8
12
10-1
1
10
102
V
(V)
Q
(nC)
DS
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaj425
40
I
S
(A)
30
20
10
T = 175°C
T = 25 °C
j
j
0
0
0.4
0.8
1.2
V
(V)
SD
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
9 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 18. Package outline SOT78 (TO-220AB)
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
10 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN017-30PL v.2
Modifications:
20120403
Product data sheet
-
PSMN017-30PL v.1
• Status changed from objective to product.
• Various changes to content.
PSMN017-30PL v.1
20120228
Objective data sheet
-
-
PSMN017-30PL
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
11 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
9. Legal information
9.1 Data sheet status
Document status[1] [2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes — Nexperia reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
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products planned, as well as for the planned application and use of
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Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
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Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of Nexperia.
PSMN017-30PL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
12 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
Terms and conditions of commercial sale — Nexperia
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
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products are sold subject to the general terms and conditions of commercial
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No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
10. Contact information
For more information, please visit:http://www.nexperia.com
For sales office addresses, please send an email to:salesaddresses@nexperia.com
PSMN017-30PL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 3 April 2012
13 of 14
PSMN017-30PL
Nexperia
N-channel 30 V 17 mΩ logic level MOSFET in TO220
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 03 April 2012
相关型号：
PSMN017-80PS,127
PSMN017-80PS - N-channel 80 V 17 mΩ standard level MOSFET in TO220 TO-220 3-Pin
NXP
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