PSMN1R5-50YLH [NEXPERIA]

N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56EProduction;
PSMN1R5-50YLH
型号: PSMN1R5-50YLH
厂家: Nexperia    Nexperia
描述:

N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56EProduction

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PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level  
Application Specific MOSFET in LFPAK56E  
26 January 2022  
Product data sheet  
1. General description  
200 Amp continuous current, logic level gate drive, N-channel enhancement mode MOSFET  
in LFPAK56E package. Part of the ASFETs for Battery Isolation and DC Motor control family  
and using Nexperia’s unique “SchottkyPlus” technology delivers high efficiency and low spiking  
performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode  
but without problematic high leakage current. The ASFET is particularly suited to 36 V battery  
powered applications requiring strong avalanche capability, linear mode performance, use at high  
switching frequencies, and also safe and reliable switching at high load-current.  
2. Features and benefits  
200 A continuous current capability  
Optimised for 36 V (nominal) battery powered applications  
LFPAK56E low-stress exposed lead-frame for ultimate reliability, optimum soldering and easy  
solder-joint inspection  
Copper-clip and solder die attach for low package inductance and resistance, and high ID (max)  
rating  
Qualified to 175 °C  
Avalanche rated, 100% tested  
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies  
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for  
low EMI designs  
Unique “SchottkyPlus” technology for Schottky-like switching performance and low IDSS leakage  
Narrow VGS(th) rating for easy paralleling and improved current sharing  
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at  
high-current conditions  
3. Applications  
Brushless DC motor control  
Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies  
Battery protection and Battery Management Systems (BMS)  
Load switch  
10 cell lithium-ion battery applications (36 V ‒ 42 V)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
ID  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
[1]  
-
200  
333  
175  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
W
Tj  
-55  
°C  
 
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
Symbol  
Static characteristics  
RDSon drain-source on-state  
resistance  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 10  
-
-
1.4  
1.6  
1.75  
2
mΩ  
mΩ  
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;  
Fig. 10  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
ID = 25 A; VDS = 25 V; VGS = 4.5 V;  
Fig. 12; Fig. 13  
-
-
13  
53  
29  
82  
nC  
nC  
QG(tot)  
[1] 200A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature.  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
source  
source  
source  
gate  
Simplified outline  
Graphic symbol  
S
S
S
G
D
2
D
S
3
4
G
mb  
mounting base; connected  
to drain  
mbb076  
1
2
3
4
LFPAK56E; Power-  
SO8 (SOT1023)  
6. Ordering information  
Table 3. Ordering information  
Type number  
Package  
Name  
Description  
Version  
PSMN1R5-50YLH  
LFPAK56E;  
Power-SO8  
plastic, single-ended surface-mounted package  
(LFPAK56); 4 leads; 1.27 mm pitch  
SOT1023  
7. Marking  
Table 4. Marking codes  
Type number  
Marking code  
1H550L  
PSMN1R5-50YLH  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VDS  
Parameter  
Conditions  
Min  
Max  
Unit  
drain-source voltage  
drain-gate voltage  
25 °C ≤ Tj ≤ 175 °C  
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ  
-
-
50  
50  
V
V
VDGR  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
2 / 12  
 
 
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
Symbol  
VGS  
Ptot  
Parameter  
Conditions  
Min  
Max  
20  
Unit  
V
gate-source voltage  
total power dissipation  
drain current  
-20  
Tmb = 25 °C; Fig. 1  
-
333  
200  
200  
1159  
175  
175  
260  
W
A
ID  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
VGS = 10 V; Tmb = 100 °C; Fig. 2  
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3  
[1]  
-
-
A
IDM  
peak drain current  
storage temperature  
junction temperature  
-
A
Tstg  
Tj  
-55  
-55  
-
°C  
°C  
°C  
Tsld(M)  
peak soldering  
temperature  
Source-drain diode  
IS  
source current  
peak source current  
Tmb = 25 °C  
-
-
200  
A
A
ISM  
pulsed; tp ≤ 10 µs; Tmb = 25 °C  
1159  
Avalanche ruggedness  
EDS(AL)S  
non-repetitive drain-  
ID = 50 A; Vsup ≤ 50 V; RGS = 50 Ω;  
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;  
tp = 513 µs  
[2]  
[2]  
[2]  
-
-
-
833  
2
mJ  
J
ID = 25 A; Vsup ≤ 50 V; RGS = 50 Ω;  
VGS = 10 V; Tj(init) = 25 °C; unclamped;  
tp = 2.5 ms  
IAS  
non-repetitive avalanche Vsup ≤ 50 V; VGS = 10 V; Tj(init) = 25 °C;  
115  
A
current  
RGS = 50 Ω  
[1] 200A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,  
thermal design and operating temperature.  
[2] Protected by 100% test  
03aa16  
aaa-032723  
120  
300  
250  
200  
150  
100  
50  
I
D
(A)  
P
der  
(%)  
80  
(1)  
40  
0
0
0
50  
100  
150  
200  
0
25  
50  
75 100 125 150 175 200  
T
(°C)  
T
(°C)  
mb  
mb  
VGS ≥ 10 V  
(1) 200A continuous current has been successfully  
demonstrated during application tests. Practically  
the current will be limited by PCB, thermal design  
and operating temperature.  
Fig. 1. Normalized total power dissipation as a  
function of mounting base temperature  
Fig. 2. Continuous drain current as a function of  
mounting base temperature  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
3 / 12  
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
aaa-032724  
4
10  
I
D
(A)  
3
2
10  
Limit R  
= V / I  
DS  
DSon  
D
t
= 10 µs  
p
10  
100 µs  
DC  
10  
1 ms  
10 ms  
100 ms  
1
-1  
10  
-1  
2
10  
1
10  
10  
V
DS  
(V)  
Tmb = 25 °C; IDM is a single pulse  
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-mb)  
thermal resistance from Fig. 4  
junction to mounting  
base  
-
0.33  
0.45  
K/W  
Rth(j-a)  
thermal resistance from Fig. 5  
-
-
42  
85  
-
-
K/W  
K/W  
junction to ambient  
Fig. 6  
aaa-028225  
1
Z
th(j-mb)  
(K/W)  
δ = 0.5  
-1  
-2  
-3  
10  
0.2  
0.1  
0.05  
t
p
0.02  
P
single shot  
10  
10  
δ =  
T
t
t
p
T
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
10  
1
t
p
(s)  
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
4 / 12  
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
aaa-027933  
aaa-027935  
Copper area 25.4 mm square; 70 µm thick on FR4  
board  
70 µm thick copper on FR4 board  
Fig. 6. PCB layout with minimum footprint for thermal  
resistance from junction to ambient  
Fig. 5. PCB layout for thermal resistance from junction  
to ambient  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V(BR)DSS  
drain-source  
breakdown voltage  
ID = 250 µA; VGS = 0 V; Tj = 25 °C  
ID = 250 µA; VGS = 0 V; Tj = -55 °C  
50  
45  
1.2  
-
-
V
V
V
-
-
VGS(th)  
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C  
voltage  
1.61  
2.2  
ΔVGS(th)/ΔT  
gate-source threshold 25 °C ≤ Tj ≤ 150 °C  
voltage variation with  
-
-4.6  
-
mV/K  
temperature  
IDSS  
drain leakage current  
gate leakage current  
VDS = 40 V; VGS = 0 V; Tj = 25 °C  
VDS = 40 V; VGS = 0 V; Tj = 125 °C  
VGS = 16 V; VDS = 0 V; Tj = 25 °C  
VGS = -16 V; VDS = 0 V; Tj = 25 °C  
-
-
-
-
-
0.01  
3.9  
2
1
µA  
µA  
nA  
nA  
mΩ  
-
IGSS  
100  
100  
1.75  
2
RDSon  
drain-source on-state  
resistance  
VGS = 10 V; ID = 25 A; Tj = 25 °C;  
Fig. 10  
1.4  
VGS = 10 V; ID = 25 A; Tj = 150 °C;  
Fig. 11  
-
-
3.52  
2
mΩ  
mΩ  
mΩ  
Ω
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;  
Fig. 10  
-
1.6  
-
VGS = 4.5 V; ID = 25 A; Tj = 150 °C;  
Fig. 11  
-
4.02  
3.3  
RG  
gate resistance  
f = 1 MHz; Tj = 25 °C  
0.52  
1.3  
Dynamic characteristics  
QG(tot)  
total gate charge  
ID = 25 A; VDS = 25 V; VGS = 4.5 V;  
Fig. 12; Fig. 13  
-
-
-
53  
82  
181  
-
nC  
nC  
nC  
ID = 25 A; VDS = 25 V; VGS = 10 V;  
Fig. 12; Fig. 13  
117  
61  
ID = 0 A; VDS = 0 V; VGS = 10 V  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
5 / 12  
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
Symbol  
QGS  
Parameter  
Conditions  
Min  
Typ  
17  
Max  
26  
Unit  
nC  
gate-source charge  
ID = 25 A; VDS = 25 V; VGS = 4.5 V;  
Fig. 12; Fig. 13  
-
-
QGS(th)  
pre-threshold gate-  
source charge  
11.3  
17  
nC  
QGS(th-pl)  
post-threshold gate-  
source charge  
-
5.4  
8
nC  
QGD  
gate-drain charge  
-
-
13  
29  
-
nC  
V
VGS(pl)  
gate-source plateau  
voltage  
ID = 25 A; VDS = 25 V; Fig. 12; Fig. 13  
2.5  
Ciss  
Coss  
Crss  
input capacitance  
output capacitance  
VDS = 25 V; VGS = 0 V; f = 1 MHz;  
Tj = 25 °C; Fig. 14  
-
-
-
7959 11143 pF  
799  
231  
1119 pF  
reverse transfer  
capacitance  
554  
pF  
td(on)  
tr  
td(off)  
tf  
turn-on delay time  
rise time  
VDS = 25 V; RL = 1 Ω; VGS = 4.5 V;  
RG(ext) = 5 Ω  
-
-
-
-
-
39  
40  
68  
32  
42  
-
-
-
-
-
ns  
ns  
ns  
ns  
nC  
turn-off delay time  
fall time  
Qoss  
output charge  
VGS = 0 V; VDS = 25 V; f = 1 MHz;  
Tj = 25 °C  
Source-drain diode  
VSD  
trr  
source-drain voltage  
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15  
-
-
-
-
0.75  
36  
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;  
ns  
nC  
ns  
VDS = 25 V; Fig. 16  
Qr  
ta  
recovered charge  
[1]  
37  
-
reverse recovery rise  
time  
21  
-
tb  
reverse recovery fall  
time  
-
14  
-
ns  
[1] includes capacitive recovery  
aaa-032725  
aaa-032726  
250  
8
6
4
2
0
10 V 4.5 V  
I
D
R
DSon  
(mΩ)  
3 V  
(A)  
200  
150  
100  
50  
V
= 2.8 V  
GS  
2.6 V  
2.4 V  
0
0
1
2
3
V
4
0
2
4
6
8
10  
12  
14  
(V)  
16  
(V)  
V
GS  
DS  
Tj = 25 °C  
Tj = 25 °C; ID = 25 A  
Fig. 7. Output characteristics; drain current as a  
function of drain-source voltage; typical values  
Fig. 8. Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
6 / 12  
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
aaa-032727  
aaa-032728  
300  
240  
180  
120  
60  
8
6
4
2
0
I
D
R
DSon  
(mΩ)  
2.6 V  
2.8 V  
(A)  
3 V  
4.5 V  
150°C  
T = 25°C  
j
V
= 10 V  
GS  
0
0
1
2
3
V
4
0
50  
100  
150  
200  
(A)  
250  
(V)  
I
D
GS  
VDS = 8 V  
Tj = 25 °C  
Fig. 9. Transfer characteristics; drain current as a  
function of gate-source voltage; typical values  
Fig. 10. Drain-source on-state resistance as a function  
of drain current; typical values  
aaa-032798  
aaa-032729  
2.5  
10  
a
V
GS  
(V)  
2
8
6
4
2
0
1.5  
1
40 V  
25 V  
V
DS  
= 10 V  
0.5  
0
-60 -30  
0
30  
60  
90 120 150 180  
T (°C)  
0
26  
52  
78  
104  
(nC)  
G
130  
Q
j
Tj = 25 °C; ID = 25 A  
Fig. 12. Gate-source voltage as a function of gate  
charge; typical values  
Fig. 11. Normalized drain-source on-state resistance  
factor as a function of junction temperature  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
7 / 12  
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
aaa-032730  
4
10  
C
iss  
C
(pF)  
V
DS  
I
D
3
10  
C
C
oss  
V
V
GS(pl)  
GS(th)  
rss  
2
10  
V
GS  
Q
GS2  
Q
GS1  
10  
10  
Q
Q
-1  
2
GS  
GD  
1
10  
10  
V
DS  
(V)  
Q
G(tot)  
003aaa508  
VGS = 0 V; f = 1 MHz  
Fig. 13. Gate charge waveform definitions  
Fig. 14. Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
003aal160  
aaa-032731  
3
2
10  
I
S
I
D
(A)  
(A)  
t
rr  
10  
t
t
b
a
0
10  
0.25 I  
RM  
150°C  
0.4  
T = 25°C  
j
I
RM  
1
t (s)  
0
0.2  
0.6  
0.8  
1
V
(V)  
SD  
Fig. 16. Reverse recovery timing definition  
VGS = 0 V  
Fig. 15. Source-drain (diode forward) current as a  
function of source-drain (diode forward)  
voltage; typical values  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
8 / 12  
 
 
 
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
11. Package outline  
Plastic single-ended surface-mounted package (LFPAK56E); 4 leads  
SOT1023  
E
A
E
A
1
b
(3x)  
2
b
c
1
1
mounting  
base  
D
1
D
H
L
1
2
3
4
b
X
e
w
A
c
C
A
1
θ
L
p
y
C
detail X  
0
1
2.5  
5 mm  
scale  
Dimensions  
Unit  
(1)  
(1)  
(1)  
E
(1)  
A
A
b
b
b
c
c
D
D
1
E
e
H
L
L
p
w
y
θ
1
1
2
1
°
max 1.10 0.15 0.50 4.41  
nom  
min 0.95 0.00 0.35 3.62  
0.25 0.30 4.70 4.45 5.30 3.7  
6.2 1.3 0.85  
5.9 0.8 0.40  
8
0
mm  
0.85  
1.27  
0.25 0.1  
°
0.19 0.24 4.45  
4.95 3.5  
Note  
1. Plastic or metal protrusions of 0.15 mm per side are not included.  
sot1023_po  
References  
Outline  
version  
European  
projection  
Issue date  
IEC  
JEDEC  
JEITA  
13-03-05  
17-07-31  
SOT1023  
Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
9 / 12  
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
12. Soldering  
4.7  
4.2  
0.9  
0.6  
(3×)  
(4×)  
0.25  
(2×)  
0.25  
(2×)  
3.5  
3.45  
0.6  
(3×)  
2.55  
2
0.25  
(2×)  
SR opening =  
Cu + 0.075  
1.1  
2.15  
3.3  
SP opening =  
Cu - 0.050  
0.7  
(4×)  
1.27  
3.81  
solder paste  
125 µm stencil  
solder lands  
solder resist  
occupied area  
sot1023_fr  
Fig. 18. Reflow soldering footprint for LFPAK56E; Power-SO8 (SOT1023)  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
10 / 12  
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
injury, death or severe property or environmental damage. Nexperia and its  
suppliers accept no liability for inclusion and/or use of Nexperia products in  
such equipment or applications and therefore such inclusion and/or use is at  
13. Legal information  
the customer’s own risk.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
Data sheet status  
document, and as such is not complete, exhaustive or legally binding.  
Document status Product  
Definition  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no representation  
or warranty that such applications will be suitable for the specified use  
without further testing or modification.  
[1][2]  
status [3]  
Objective [short]  
data sheet  
Development  
This document contains data from  
the objective specification for  
product development.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia accepts no liability for  
any assistance with applications or customer product design. It is customer’s  
sole responsibility to determine whether the Nexperia product is suitable  
and fit for the customer’s applications and products planned, as well as  
for the planned application and use of customer’s third party customer(s).  
Customers should provide appropriate design and operating safeguards to  
minimize the risks associated with their applications and products.  
Preliminary [short]  
data sheet  
Qualification  
Production  
This document contains data from  
the preliminary specification.  
Product [short]  
data sheet  
This document contains the product  
specification.  
[1] Please consult the most recently issued document before initiating or  
completing a design.  
Nexperia does not accept any liability related to any default, damage, costs  
or problem which is based on any weakness or default in the customer’s  
applications or products, or the application or use by customer’s third party  
customer(s). Customer is responsible for doing all necessary testing for the  
customer’s applications and products using Nexperia products in order to  
avoid a default of the applications and the products or of the application or  
use by customer’s third party customer(s). Nexperia does not accept any  
liability in this respect.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the internet at https://www.nexperia.com.  
Definitions  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any representations or  
warranties as to the accuracy or completeness of information included herein  
and shall have no liability for the consequences of use of such information.  
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with the same product type number(s) and title. A short data sheet is  
intended for quick reference only and should not be relied upon to contain  
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full data sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
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customer.  
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data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and customer have explicitly  
agreed otherwise in writing. In no event however, shall an agreement be  
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beyond those described in the Product data sheet.  
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Disclaimers  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy  
or completeness of such information and shall have no liability for the  
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Non-automotive qualified products — Unless this data sheet expressly  
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accordance with automotive testing or application requirements. Nexperia  
accepts no liability for inclusion and/or use of non-automotive qualified  
products in automotive equipment or applications.  
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or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
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In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without Nexperia’s warranty of the  
product for such automotive applications, use and specifications, and (b)  
whenever customer uses the product for automotive applications beyond  
Nexperia’s specifications such use shall be solely at customer’s own risk,  
and (c) customer fully indemnifies Nexperia for any liability, damages or failed  
product claims resulting from customer design and use of the product for  
automotive applications beyond Nexperia’s standard warranty and Nexperia’s  
product specifications.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, Nexperia’s aggregate and cumulative liability towards customer  
for the products described herein shall be limited in accordance with the  
Terms and conditions of commercial sale of Nexperia.  
Translations — A non-English (translated) version of a document is for  
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between the translated and English versions.  
Right to make changes — Nexperia reserves the right to make changes  
to information published in this document, including without limitation  
specifications and product descriptions, at any time and without notice. This  
document supersedes and replaces all information supplied prior to the  
publication hereof.  
Trademarks  
Suitability for use — Nexperia products are not designed, authorized or  
warranted to be suitable for use in life support, life-critical or safety-critical  
systems or equipment, nor in applications where failure or malfunction  
of an Nexperia product can reasonably be expected to result in personal  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
11 / 12  
 
Nexperia  
PSMN1R5-50YLH  
N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E  
Contents  
1. General description......................................................1  
2. Features and benefits.................................................. 1  
3. Applications.................................................................. 1  
4. Quick reference data....................................................1  
5. Pinning information......................................................2  
6. Ordering information....................................................2  
7. Marking..........................................................................2  
8. Limiting values............................................................. 2  
9. Thermal characteristics............................................... 4  
10. Characteristics............................................................5  
11. Package outline.......................................................... 9  
12. Soldering................................................................... 10  
13. Legal information......................................................11  
© Nexperia B.V. 2022. All rights reserved  
For more information, please visit: http://www.nexperia.com  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release: 26 January 2022  
©
PSMN1R5-50YLH  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
26 January 2022  
12 / 12  

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