PSMN1R7-60BS [NEXPERIA]
N-channel 60 V 2 mΩ standard level MOSFET in D2PAKProduction;
| 型号： | PSMN1R7-60BS |
| 厂家： | 
Nexperia |
| 描述： | N-channel 60 V 2 mΩ standard level MOSFET in D2PAKProduction |
| 文件： | 总14页 (文件大小：979K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN1R7-60BS
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Rev. 2 — 29 February 2012
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
1.2 Features and benefits
High efficiency due to low switching
Suitable for standard level gate drive
and conduction losses
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
-
-
-
-
-
[1]
ID
-
120
306
175
A
Ptot
total power dissipation Tmb = 25 °C; see Figure 2
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
-
-
1.66
2.66
2
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13;see Figure 12
3.1
Dynamic characteristics
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 75 A; VDS = 30 V;
see Figure 14;see Figure 15
-
-
32
-
-
nC
nC
QG(tot)
137
Avalanche ruggedness
EDS(AL)S non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
-
-
913
mJ
drain-source
Vsup ≤ 60 V; RGS = 50 Ω; Unclamped
avalanche energy
[1] Continuous current is limited by package.
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
drain[1]
mb
D
S
2
3
source
G
mb
mounting base;
connected to drain
mbb076
2
1
3
SOT404 (D2PAK)
[1] It is not possible to make connection to pin 2.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN1R7-60BS
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min Max Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
60
V
V
V
A
A
A
W
VDGR
VGS
-
60
-20
20
[1]
[1]
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
-
120
120
1076
306
-
IDM
peak drain current
-
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
peak soldering temperature
-
-55
-55
-
175 °C
175 °C
260 °C
Tsld(M)
Source-drain diode
[1]
IS
source current
peak source current
Tmb = 25 °C
-
-
120
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1076
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; Vsup ≤ 60 V;
RGS = 50 Ω; Unclamped
-
913 mJ
[1] Continuous current is limited by package.
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
2 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
003aaf754
03aa16
120
300
I
D
(A)
P
der
(%)
240
80
180
120
60
(1)
40
0
0
0
50
100
150
200
0
50
100
150
200
T
( C)
°
T
(°C)
mb
mb
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaf753
104
ID
(A)
103
Limit RDSon = VDS / ID
tp =10 μs
100 μs
102
10
1 ms
10 ms
100 ms
1
DC
10-1
10-1
1
10
102
V DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
3 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
see Figure 4
-
0.22
0.49
K/W
Rth(j-a)
thermal resistance from
junction to ambient
Minimum footprint; mounted on
a printed-circuit board
-
50
-
K/W
003aaf752
1
Zth (j-mb)
(K/W)
δ = 0.5
10-1
10-2
10-3
0.2
0.1
0.05
0.02
tp
P
δ =
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
t (s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
4 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
54
60
1
-
-
-
-
-
-
V
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
see Figure 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 10
-
-
4.6
4
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 11; see Figure 10
2
3
IDSS
drain leakage current
gate leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
VDS = 60 V; VGS = 0 V; Tj = 175 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.03 10
µA
µA
nA
nA
mΩ
-
500
IGSS
2
100
100
2
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 12
1.66
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 13; see Figure 12
-
-
-
3.82 4.5
2.66 3.1
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 100 °C;
see Figure 13; see Figure 12
RG
gate resistance
f = 1 MHz
0.9
-
-
Dynamic characteristics
QG(tot)
total gate charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
-
137
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
-
129
48
-
-
-
nC
nC
nC
QGS
gate-source charge
ID = 75 A; VDS = 30 V; VGS = 10 V;
see Figure 14; see Figure 15
QGS(th)
pre-threshold
29
gate-source charge
QGS(th-pl)
post-threshold
-
19
-
nC
gate-source charge
QGD
gate-drain charge
-
-
32
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
VDS = 30 V; see Figure 14;
see Figure 15
5.7
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 16
-
-
-
9997
1210
594
-
-
-
pF
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 0.4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; ID = 75 A
-
-
-
-
42
-
-
-
-
ns
ns
ns
ns
56
turn-off delay time
fall time
115
49
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
5 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Table 6.
Symbol
Characteristics …continued
Parameter
Conditions
Min
Typ
Max Unit
Source-drain diode
VSD source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
-
-
-
0.8
57
80
1.2
V
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
-
-
ns
nC
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 30 V
003aaf742
003aaf743
250
80
g
fs
I
D
(S)
(A)
200
60
150
100
50
40
20
0
T = 175
j
C
°
T = 25
j
C
°
0
0
30
60
90
120
0
2
4
6
V
(V)
I
(A)
GS
D
Fig 5. Forward transconductance as a function of
drain current; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf746
003aad674
105
200
8
6
I
D
C
(pF)
(A)
10
5
150
4.5
C
iss
104
C
rss
100
50
0
103
V
(V) = 4
GS
102
10-1
1
10
102
0
0.5
1
1.5
2
V
(V)
GS
V
DS
(V)
Fig 7. Input and reverse transfer capacitances as a
function of gate-source voltage, typical values
Fig 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
6 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
003aag658
003aad280
5
12
R
DSon
V
GS(th)
(V)
(m
)
Ω
10
4
3
2
1
0
max
8
6
4
2
0
typ
min
0
5
10
15
20
−60
0
60
120
180
V
(V)
T (°C)
j
GS
Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
03aa35
003aaf751
−1
10
10
RDSon
I
D
(mΩ)
(A)
min
typ
max
−2
−3
−4
−5
−6
10
8
4.8
VGS (V) = 4.5
10
10
10
10
6
4
2
0
5.0
5.5
6.0
10.0
20.0
0
50
100
150
0
2
4
6
ID (A)
V
GS
(V)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Drain-source on-state resistance as a function
of drain current; typical values
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
7 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
003aaf747
2.4
a
2
1.6
1.2
0.8
0.4
V
DS
I
D
V
GS(pl)
V
GS(th)
GS
V
0
-60
Q
Q
GS1
GS2
0
60
120
180
T (°C)
j
Q
Q
GD
GS
Q
G(tot)
003aaa508
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 14. Gate charge waveform definitions
003aaf748
003aaf749
10
105
V
GS
C
(pF)
(V)
48V
8
104
C
30V
iss
V
= 12V
DS
6
4
2
0
103
102
10
C
C
oss
rss
0
40
80
120
160
10-1
1
10
102
V
(V)
Q
(nC)
DS
G
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
8 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
003aaf750
200
160
120
80
I
S
(A)
40
T = 175
j
C
T = 25
j
C
°
°
0
0
0.3
0.6
0.9
1.2
V
(V)
SD
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
9 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
7. Package outline
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.80 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
05-02-11
06-03-16
SOT404
Fig 18. Package outline SOT404 (D2PAK)
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
10 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PSMN1R7-60BS v.2
Modifications:
20120229
Product data sheet
-
PSMN1R7-60BS v.1
• Status changed from objective to product.
• Various changes to content.
PSMN1R7-60BS v.1
20110823
Objective data sheet
-
-
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
11 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
Right to make changes— Nexperia reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local Nexperia sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial saleof Nexperia.
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
12 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
Terms and conditions of commercial sale— Nexperia
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from competent authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products— Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
10. Contact information
For more information, please visit:http://www.nexperia.com
For sales office addresses, please send an email to:salesaddresses@nexperia.com
PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 29 February 2012
13 of 14
PSMN1R7-60BS
Nexperia
N-channel 60 V 2 mΩ standard level MOSFET in D2PAK
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 February 2012
相关型号：
PSMN1R8-30MLH
N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technologyProduction
NEXPERIA
PSMN1R8-30PL,127
PSMN1R8-30PL - N-channel 30 V, 1.8 mΩ logic level MOSFET in TO-220 TO-220 3-Pin
NXP
PSMN1R8-40YLC
N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technologyProduction
NEXPERIA
PSMN1R8-80SSF
NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 packageProduction
NEXPERIA
PSMN1R9-25YLC,115
PSMN1R9-25YLC - N-channel 25 V 2.05 mΩ logic level MOSFET in LFPAK using NextPower technology SOIC 4-Pin
NXP
PSMN1R9-40PL
150A, 40V, 0.0017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN
NXP
©2020 ICPDF网 联系我们和版权申明