PSMN1R9-80SSE [NEXPERIA]
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88Production;
| 型号： | PSMN1R9-80SSE |
| 厂家： | 
Nexperia |
| 描述： | N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88Production |
| 文件： | 总13页 (文件大小：329K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in
LFPAK88
6 February 2023
Product data sheet
1. General description
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part
of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The
PSMN1R9-80SSE delivers very low RDSon and enhanced safe operating area performance in a
high-reliability copper-clip LFPAK88 package.
PSMN1R9-80SSE complements the latest "hot-swap" controllers – robust enough to withstand
substantial inrush currents during turn-on, low RDSon to minimize I2R losses and deliver optimum
efficiency when turned fully ON.
2. Features and benefits
•
•
•
Fully optimized Safe Operating Area (SOA) for superior linear mode operation
Low RDSon for low I2R conduction losses
LFPAK88 package for applications that demand the highest performance and reliability
3. Applications
•
•
•
•
•
Hot swap
Load switch
Soft start
E-fuse
Telecommunication and computing systems based on a 48 V backplane/supply rail
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
80
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
286
340
175
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
-
1.6
2.6
1.9
3
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
7
23
53
nC
nC
QG(tot)
77
155
232
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
ID = 90 A; Vsup ≤ 80 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 179 µs; Fig. 4
[1]
-
-
840
mJ
source avalanche
energy
Source-drain diode
Qr
recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; [2]
VDS = 40 V; Tj = 25 °C; Fig. 18
-
60
-
nC
[1] Protected by 100% test
[2] includes capacitive recovery
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
gate
Simplified outline
Graphic symbol
G
S
S
S
D
2
source
source
source
D
S
3
4
G
mb
mounting base; connected
to drain
mbb076
1
2
3
4
LFPAK88 (SOT1235)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
plastic, single-ended surface-mounted package
Version
PSMN1R9-80SSE
LFPAK88
SOT1235
(LFPAK88); 4 leads; 2 mm pitch; 8 mm x 8 mm x 1.6 mm
body
7. Marking
Table 4. Marking codes
Type number
Marking code
X1E9S80S
PSMN1R9-80SSE
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
total power dissipation
25 °C ≤ Tj ≤ 175 °C
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
80
V
VDGR
VGS
-
80
V
-20
-
20
V
Ptot
Tmb = 25 °C; Fig. 1
340
W
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PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
2 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
Symbol
Parameter
Conditions
Min
Max
286
202
1142
175
175
260
Unit
A
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C; Fig. 2
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
-
A
IDM
peak drain current
storage temperature
junction temperature
-
A
Tstg
Tj
-55
-55
-
°C
°C
°C
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
286
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
1142
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 90 A; Vsup ≤ 80 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 179 µs; Fig. 4
[1]
[1]
-
-
840
90
mJ
A
IAS
non-repetitive avalanche Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C;
current
RGS = 50 Ω; Fig. 4
[1] Protected by 100% test
120
03aa16
aaa-034149
300
250
200
150
100
50
I
D
(A)
P
der
(%)
80
40
0
0
0
50
100
150
200
(°C)
0
25
50
75 100 125 150 175 200
(°C)
T
T
mb
mb
VGS ≥ 10 V
Fig. 2. Continuous drain current as a function of
mounting base temperature
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
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PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
3 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
aaa-034151
4
10
I
D
(A)
3
2
10
Limit R = V / I
DSon DS D
t
= 10 µs
p
10
100 µs
1 ms
10 µs
10
1
10 ms
100 ms
DC
100 µs
1ms
10ms
100ms
DC
2
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
aaa-034148
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 5
junction to mounting
base
-
0.2
0.44
K/W
Rth(j-a)
thermal resistance from Fig. 6
-
-
35
70
-
-
K/W
K/W
junction to ambient
Fig. 7
©
PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
4 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
aaa-031161
1
Z
th(j-mb)
(K/W)
δ = 0.5
-1
-2
-3
10
0.2
0.1
0.05
t
p
P
0.02
10
10
δ =
T
single shot
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-029383
aaa-029384
Copper square 25.4 mm x 25.4 mm; 70 μm thick on
FR4 board
70 μm thick copper on FR4 board
Fig. 7. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 6. PCB layout for resistance from junction to
ambient
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
80
72
2
-
-
V
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 11
2.6
1.6
3
3.6
V
voltage
ID = 1 mA; VDS=VGS; Tj = 175 °C
-
-
-
-
V
ID = 1 mA; VDS=VGS; Tj = -55 °C
-
V
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 150 °C
voltage variation with
-
-6.4
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 80 V; VGS = 0 V; Tj = 25 °C
VDS = 16 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
0.02
1
µA
µA
nA
nA
3
2
2
100
100
100
IGSS
©
PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
5 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
-
1.6
1.9
mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13
-
2.6
-
3
mΩ
mΩ
Ω
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13
-
4.2
3.2
RG
gate resistance
f = 1 MHz; Tj = 25 °C
0.8
1.6
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
77
-
155
83
232
-
nC
nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
QGS
gate-source charge
ID = 25 A; VDS = 40 V; VGS = 10 V;
Tj = 25 °C; Fig. 14; Fig. 15
36
-
60
34
84
-
nC
nC
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
26
-
nC
QGD
gate-drain charge
7
-
23
53
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 40 V; Tj = 25 °C;
Fig. 14; Fig. 15
5.2
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 40 V; VGS = 0 V; f = 0.5 MHz;
Tj = 25 °C; Fig. 16
7340 12235 17140 pF
1710 2843 4560 pF
reverse transfer
capacitance
7
64
169
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 40 V; RL = 1.6 Ω; VGS = 10 V;
RG(ext) = 5 Ω; Tj = 25 °C
-
-
-
-
46
42
79
46
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD
trr
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
-
0.78
54
1
-
V
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
ns
nC
VDS = 40 V; Tj = 25 °C; Fig. 18
Qr
recovered charge
[1]
60
-
[1] includes capacitive recovery
©
PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
6 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
aaa-034152
aaa-034153
400
6
5
4
3
2
1
0
I
D
R
DSon
(mΩ)
20 V
10 V
8 V
(A)
300
200
100
0
V
GS
= 7 V
6.5 V
6 V
5 V
0
1
2
3
V
4
0
4
8
12
16
V (V)
GS
20
(V)
DS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 8. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-034154
aaa-032417
-2
400
10
I
D
I
D
(A)
(A)
-3
-4
-5
-6
-7
10
300
200
100
0
10
10
10
10
175°C
4
T = 25°C
j
0
2
6
8
10
0
1
2
3
4
GS
5
V
(V)
V
(V)
GS
VDS = 8 V
Tj = 25 °C; VDS = 5 V
Fig. 10. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
©
PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
7 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
aaa-034155
aaa-033260
10
2.4
1.8
1.2
0.6
0
R
(mΩ)
a
DSon
6.5 V
7 V
8 V
8
6
4
2
0
V
= 10 V
20 V
GS
0
50 100 150 200 250 300 350 400
(A)
-60 -30
0
30
60
90 120 150 180
I
T (°C)
j
D
Tj = 25 °C
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-034156
10
V
(V)
GS
V
DS
8
6
4
2
0
I
D
V
DS
= 16 V
64 V
V
V
GS(pl)
GS(th)
40 V
V
GS
Q
GS2
Q
GS1
Q
Q
GS
GD
0
20
40
60
80 100 120 140 160
(nC)
Q
G
Q
G(tot)
003aaa508
Tj = 25 °C; ID = 25 A
Fig. 15. Gate charge waveform definitions
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
©
PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
8 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
aaa-034157
aaa-034158
5
10
400
300
200
100
0
C
I
S
(A)
(pF)
C
C
4
iss
10
oss
3
10
2
10
C
rss
175°C
T = 25°C
j
10
10
-1
2
1
10
10
0
0.2
0.4
0.6
0.8
1
(V)
1.2
V
(V)
V
DS
SD
VGS = 0 V; f = 1 MHz
VGS = 0 V
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source-drain (diode forward) current as a
as a function of drain-source voltage; typical
values
function of source-drain (diode forward)
voltage; typical values
003aal160
I
D
(A)
t
rr
t
t
b
a
0
0.25 I
RM
I
RM
t (s)
Fig. 18. Reverse recovery timing definition
©
PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
9 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
11. Package outline
Plastic single-ended surface-mounted package (LFPAK88); 4 leads
SOT1235
b
2
E
1
D
1
A
C
1
A
3
θ
L
y
C
detail X
A
2
A
E
c
2
mounting
base
D
H
L
2
1
2
3
4
X
e
e
e
c
b
w
A
(4x)
0
4
8 mm
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
b
b
2
c
c
2
D
D
1
E
E
e
H
L
L
2
w
y
θ
1
2
3
1
°
max 0.15 1.7
nom
1.1
7.3 0.24 0.55 6.3
7.1 0.18 0.45 6.1
5.1
4.9
8.1
7.9
6.9
6.7
8.1
7.8
0.8
1.3
0.9
8
0
mm
0.25
2.0
0.25 0.10
°
0.00 1.5
0.9
0.6
min
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
sot1235_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
17-08-02
17-08-07
SOT1235
Fig. 19. Package outline LFPAK88 (SOT1235)
©
PSMN1R9-80SSE
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Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
10 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
12. Soldering
Footprint information for reflow soldering of LFPAK88 package
SOT1235
9.2
8.8
8.6
0.3
0.2
1.85
2.05
1.7
2.1
0.2
1.2
0.7
0.7
0.1
0.2
1.25
1.76
4.275
2.925
5.7
1.15
7.8
3.74
9.4
0.2
1.225
1.9
1.6 1.4 1.3
1.6
6.55
6.8
7
1.2
1.4
1.1
2
7.8
recommended stencil thickness: 0.125 mm
solder resist
occupied area
solder land
solder paste
Dimensions in mm
18-12-12
18-12-13
Issue date
sot1235_fr
Fig. 20. Reflow soldering footprint for LFPAK88 (SOT1235)
©
PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
11 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
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©
PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
12 / 13
Nexperia
PSMN1R9-80SSE
N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Package outline........................................................ 10
12. Soldering................................................................... 11
13. Legal information......................................................12
© Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 6 February 2023
©
PSMN1R9-80SSE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2023. All rights reserved
Product data sheet
6 February 2023
13 / 13
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