PSMN2R8-40PS [NEXPERIA]
N-channel TO220 40 V 2.8 mΩ standard level MOSFETProduction;型号: | PSMN2R8-40PS |
厂家: | Nexperia |
描述: | N-channel TO220 40 V 2.8 mΩ standard level MOSFETProduction |
文件: | 总13页 (文件大小:745K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
11 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product
is designed and qualified for use in a wide range of industrial, communications and
domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
•
•
3. Applications
DC-to-DC converters
Load switching
Motor control
•
•
•
•
Server power supplies
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
40
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
-
-
-
[1]
-
100
211
175
A
Ptot
Tj
total power dissipation Tmb = 25 °C; Fig. 2
junction temperature
-
W
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 12; Fig. 13
-
-
-
4.5
2.8
mΩ
mΩ
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
[2]
2.3
Dynamic characteristics
QGD
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 20 V;
Fig. 14; Fig. 15
-
-
17
71
-
-
nC
nC
QG(tot)
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω
-
-
407
mJ
source avalanche
energy
[1] Continuous current rating is limited by package.
[2] Measured 3 mm from package.
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
mb
D
S
1
G
D
S
D
gate
2
drain
source
G
3
mbb076
mb
mounting base; connected to
drain
1
2 3
TO-220AB (SOT78)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN2R8-40PS
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN2R8-40PS
PSMN2R8-40PS
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
2 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
40
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
-
VDGR
VGS
-
40
V
-20
20
V
ID
VGS = 10 V; Tmb = 100 °C; Fig. 1
VGS = 10 V; Tmb = 25 °C; Fig. 1
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Tmb = 25 °C; Fig. 2
[1]
[1]
-
100
100
797
211
175
175
A
-
A
IDM
Ptot
Tstg
Tj
peak drain current
-
A
total power dissipation
storage temperature
junction temperature
-
W
°C
°C
-55
-55
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
100
797
A
A
ISM
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω
-
407
mJ
[1] Continuous current rating is limited by package.
003aad361
03aa16
120
200
ID
P
der
(%)
(A)
150
100
50
80
(1)
40
0
0
0
50
100
150
200
0
50
100
150
200
Tmb (°C)
T
(°C)
mb
Fig. 1. Continuous drain current as a function of
mounting base temperature
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
3 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aad385
103
ID
Limit RDSon = VDS / ID
t = 10
p
s
µ
(A)
102
10
1
100 µs
(1)
DC
1 ms
10 ms
100 ms
10-1
10-1
1
10
102
VDS (V)
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 4
-
0.4
0.7
K/W
003aad247
1
Zth (j-mb)
(K/W)
= 0.5
δ
10-1
10-2
10-3
10-4
0.2
0.1
0.05
0.02
tp
δ =
P
T
single shot
t
tp
T
10-6
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
PSMN2R8-40PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
4 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
10. Characteristics
Table 7.
Characteristics
Tested to JEDEC standards where applicable.
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
36
40
-
-
-
-
-
V
V
V
-
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C;
4.6
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10; Fig. 11
1
-
-
V
V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
2.3
3
4
IDSS
drain leakage current
gate leakage current
VDS = 40 V; VGS = 0 V; Tj = 25 °C
VDS = 40 V; VGS = 0 V; Tj = 125 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.3
-
10
µA
µA
nA
nA
mΩ
150
100
100
4.5
IGSS
10
10
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 100 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 10 A; Tj = 175 °C;
Fig. 12; Fig. 13
-
-
-
-
5.6
2.8
-
mΩ
mΩ
Ω
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 13
[1]
2.3
0.7
RG
internal gate
f = 1 MHz
resistance (AC)
Dynamic characteristics
QG(tot)
total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V
-
-
-
-
61
71
21
13
-
-
-
-
nC
nC
nC
nC
ID = 25 A; VDS = 20 V; VGS = 10 V;
Fig. 14; Fig. 15
QGS
gate-source charge
QGS(th)
pre-threshold gate-
source charge
QGS(th-pl)
post-threshold gate-
source charge
-
8.5
-
nC
QGD
gate-drain charge
-
-
17
-
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 20 V; Fig. 14; Fig. 15
4.7
Ciss
input capacitance
output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16
-
-
4491
937
-
-
pF
pF
Coss
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
5 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crss
reverse transfer
capacitance
-
464
-
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω
-
-
-
-
28
29
52
23
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
VSD source-drain voltage
trr
IS = 10 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
-
0.85
47
1.2
-
V
reverse recovery time IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V
ns
Qr
recovered charge
IS = 40 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C
-
61
-
nC
[1] Measured 3 mm from package.
003aad431
003aad433
120
ID
(A)
100
100
ID
(A)
80
20
10
6.5
5.5
6
8
80
60
40
20
0
60
40
20
0
5
°
Tj = 175
C
VGS (V) = 4.5
Tj = 25 °C
VGS (V)
0
0.3
0.6
0.9
1.2
0
2
4
6
VDS (V)
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
6 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aad437
003aad438
7000
125
gfs
C
Ciss
(pF)
(S)
6000
5000
4000
3000
100
75
50
25
0
Crss
2000
0
3
6
9
12
0
25
50
75
100
VGS (V)
ID (A)
Fig. 7. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
Fig. 8. Forward transconductance as a function of
drain current; typical values
003aad439
003aae992
5
12
RDSon
V
GS(th)
(V)
(mΩ)
10
4
3
2
1
0
max
8
6
4
2
0
typ
min
4
8
12
16
20
- 60
0
60
120
180
VGS (V)
T (°C)
j
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
©
PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
7 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aak869
03aa27
- 1
10
2
I
D
(A)
a
min
typ
max
- 2
- 3
- 4
- 5
- 6
10
1.5
10
10
10
10
1
0.5
0
0
2
4
6
- 60
0
60
120
180
T ( C)
°
j
V
(V)
GS
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
003aad432
10
V
DS
VGS (V) = 5
RDSon
(mΩ)
I
D
8
V
GS(pl)
5.5
6
6
4
2
0
V
GS(th)
GS
V
6.5
10
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
20
8
003aaa508
Fig. 14. Gate charge waveform definitions
0
20
40
60
80
100
ID (A)
Fig. 13. Drain-source on-state resistance as a function
of drain current; typical values
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
8 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
003aad435
003aad436
10
VGS
(V)
104
C
(pF)
8 V
Ciss
8
6
4
2
32 V
VDS = 20 V
103
Coss
Crss
0
0
102
20
40
60
80
10-1
1
10
102
QG (nC)
VDS (V)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
Fig. 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aad434
100
IS
(A)
80
60
40
Tj = 175 °C
20
0
°
Tj = 25
0.9
C
0
0.3
0.6
1.2
VSD (V)
Fig. 17. Source current as a function of source-drain voltage; typical values
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
9 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
L
1
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig. 18. Package outline TO-220AB (SOT78)
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PSMN2R8-40PS
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
10 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Nexperia does not accept any liability related to any default,
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
12.3 Disclaimers
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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Product data sheet
11 February 2013
11 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
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the product is not suitable for automotive use. It is neither qualified nor
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Nexperia accepts no liability for inclusion and/or use of non-
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In the event that customer uses the product for design-in and use in
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
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Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
12 / 13
Nexperia
PSMN2R8-40PS
N-channel TO220 40 V 2.8 mΩ standard level MOSFET
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................5
Package outline ................................................... 10
3
4
5
6
7
8
9
10
11
12
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
12.1
12.2
12.3
12.4
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
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Date of release: 11 February 2013
©
PSMN2R8-40PS
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
11 February 2013
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