PSMN3R3-40MLH [NEXPERIA]
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technologyProduction;
| 型号： | PSMN3R3-40MLH |
| 厂家： | 
Nexperia |
| 描述： | N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technologyProduction |
| 文件： | 总12页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33
using NextPower-S3 technology
11 November 2019
Product data sheet
1. General description
118 A, logic level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using
advanced TrenchMOS Superjunction technology. This product has been designed and qualified for
high efficiency applications at high switching frequencies.
2. Features and benefits
•
Avalanche rated, 100% tested
•
•
•
•
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
Low Qrr, QG and QGD for high system efficiency, especially at high switching frequencies
Low spiking and ringing for low EMI designs
High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire
bonds, qualified to 175 °C
•
•
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder
joints
Low parasitic inductance and resistance
3. Applications
•
•
•
•
Secondary side synchronous rectification
DC-to-DC converters
Brushless DC motor drive
LED lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
ID
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤ Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
[1]
-
118
101
175
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
junction temperature
-
W
Tj
-55
°C
Static characteristics
RDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
-
2.7
3.4
3.3
4.2
mΩ
mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
Dynamic characteristics
QGD
gate-drain charge
total gate charge
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
1.2
11
4
8
nC
nC
QG(tot)
17
24
[1] 118A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
D
S
2
G
3
4
mbb076
mb
Mounting base; connected
to drain
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMN3R3-40MLH
LFPAK33
Plastic, single ended surface mounted package (LFPAK33); 8
leads; 0.65 mm pitch
SOT1210
7. Marking
Table 4. Marking codes
Type number
Marking code
PSMN3R3-40MLH
3H3L40
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
25 °C ≤ Tj ≤ 175 °C
-
-
40
45
V
V
VDSM
peak drain-source
voltage
tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ;
pulsed
VDGR
VGS
Ptot
ID
drain-gate voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
-
40
V
-20
20
V
Tmb = 25 °C; Fig. 1
-
101
118
84
W
A
VGS = 10 V; Tmb = 25 °C; Fig. 2
VGS = 10 V; Tmb = 100 °C
[1]
-
-
A
IDM
peak drain current
storage temperature
junction temperature
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
-
475
175
175
260
A
Tstg
Tj
-55
-55
-
°C
°C
°C
Tsld(M)
peak soldering
temperature
Source-drain diode
IS
source current
Tmb = 25 °C
-
101
A
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
2 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
Symbol
Parameter
Conditions
Min
Max
Unit
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
475
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
ID = 25 A; Vsup ≤ 40 V; RGS = 50 Ω;
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 308 µs
-
-
200
80
mJ
A
IAS
non-repetitive avalanche Vsup ≤ 40 V; VGS = 10 V; Tj(init) = 25 °C;
[2]
current
RGS = 50 Ω
[1] 118A Continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Protected by 100% test
03aa16
aaa-030386
120
120
100
80
60
40
20
0
I
D
(A)
P
der
(%)
80
40
0
0
50
100
150
200
0
25
50
75 100 125 150 175 200
T
mb
(°C)
T
(°C)
mb
VGS ≥ 10 V
(1) 118A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-030382
3
10
I
D
(A)
Limit R
= V / I
DS D
DSon
t
p
= 10 µs
2
10
DC
100 µs
10
1 ms
10 ms
100 ms
1
-1
10
-1
2
10
1
10
10
V
DS
(V)
Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
3 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from Fig. 4
junction to mounting
base
-
1.3
1.48
K/W
Rth(j-a)
thermal resistance from Fig. 5
-
-
50
-
-
K/W
K/W
junction to ambient
Fig. 6
130
aaa-028610
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
-1
10
10
10
0.05
0.02
t
p
P
single shot
δ =
T
-2
t
t
p
T
-3
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
aaa-028026
aaa-028025
Copper square 25.4 mm square; 70 μm thick on
FR4 board
70 μm thick copper on FR4 board
Fig. 6. PCB layout with minimum footprint for thermal
resistance from junction to ambient
Fig. 5. PCB layout for resistance from junction to
ambient
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
40
36
-
-
-
-
V
V
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PSMN3R3-40MLH
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Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
4 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VGS(th)
gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C
voltage
1.45
1.77
2.15
V
ΔVGS(th)/ΔT
gate-source threshold 25 °C ≤ Tj ≤ 150 °C
voltage variation with
-
-4.4
-
mV/K
temperature
IDSS
drain leakage current
gate leakage current
VDS = 32 V; VGS = 0 V; Tj = 25 °C
VDS = 32 V; VGS = 0 V; Tj = 125 °C
VGS = 16 V; VDS = 0 V; Tj = 25 °C
VGS = -16 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
0.01
1.6
2
1
µA
µA
nA
nA
mΩ
-
IGSS
100
100
3.3
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 10
2.7
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 11
-
-
7.2
4.2
9.2
2
mΩ
mΩ
mΩ
Ω
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 10
-
3.4
-
VGS = 4.5 V; ID = 25 A; Tj = 175 °C;
Fig. 11
-
RG
gate resistance
f = 1 MHz; Tj = 25 °C
0.3
0.8
Dynamic characteristics
QG(tot)
total gate charge
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
11
24
17
38
24
54
nC
nC
ID = 25 A; VDS = 20 V; VGS = 10 V;
Fig. 12; Fig. 13
ID = 0 A; VDS = 0 V
-
20
6.8
4
-
nC
nC
nC
QGS
gate-source charge
ID = 25 A; VDS = 20 V; VGS = 4.5 V;
Fig. 12; Fig. 13
4
10.2
6
QGS(th)
pre-threshold gate-
source charge
2.4
QGS(th-pl)
post-threshold gate-
source charge
1.7
2.8
4.2
nC
QGD
gate-drain charge
1.2
-
4
8
-
nC
V
VGS(pl)
gate-source plateau
voltage
ID = 25 A; VDS = 20 V; Fig. 12; Fig. 13
2.8
Ciss
Coss
Crss
input capacitance
output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 14
1761 2710 3794 pF
407
30
627
101
877
222
pF
pF
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω
-
-
-
-
-
16
19
17
11
20
-
-
-
-
-
ns
ns
ns
ns
nC
turn-off delay time
fall time
Qoss
output charge
VGS = 0 V; VDS = 20 V; f = 1 MHz
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
-
0.8
1
V
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
5 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
Symbol
Parameter
Conditions
Min
Typ
27
Max
Unit
ns
trr
Qr
ta
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
-
-
-
-
-
VDS = 20 V; Fig. 16
recovered charge
22
nC
ns
reverse recovery rise
time
16
tb
reverse recovery fall
time
-
11
-
ns
aaa-029075
aaa-029076
120
12
I
D
R
DSon
(A)
(mΩ)
100
80
60
40
20
0
10 V
9
6
3
0
V
= 3 V
2.8 V
4.5 V
GS
2.6 V
2.4 V
0
1
2
3
V
4
0
5
10
15
GS
20
(V)
V
(V)
DS
Tj = 25 °C
Tj = 25 °C; ID = 25 A
Fig. 7. Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 8. Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-030383
aaa-029078
120
12
I
R
(mΩ)
D
DSon
2.8 V
3 V
(A)
10
8
90
60
30
0
3.5 V
4.5 V
6
4
175°C
2
25°C
3
2
V
GS
= 10 V
0
0
1
4
GS
5
0
20
40
60
80
100
(A)
120
V
(V)
I
D
VDS = 8 V
Tj = 25 °C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
6 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
aaa-030384
aaa-030480
2.4
a
10
8
V
(V)
GS
2
1.6
1.2
0.8
0.4
0
6
32 V
20 V
4
V
= 8 V
DS
2
0
-60 -30
0
30
60
90 120 150 180
0
10
20
30
40
Q (nC)
G
50
T (°C)
j
Tj = 25 °C; ID = 25 A
Fig. 12. Gate-source voltage as a function of gate
charge; typical values
Fig. 11. Normalized drain-source on-state resistance
factor as a function of junction temperature
aaa-030542
4
10
V
C
DS
(pF)
I
D
C
C
iss
3
2
10
10
V
V
GS(pl)
oss
GS(th)
V
GS
Q
GS2
C
rss
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 13. Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
VGS = 0 V; f = 1 MHz
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
7 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
003aal160
aaa-030385
2
10
I
S
I
D
(A)
(A)
t
rr
t
t
b
a
0
10
0.25 I
RM
175°C
0.4
T = 25°C
j
I
RM
1
t (s)
0
0.2
0.6
0.8
1
(V)
1.2
V
SD
Fig. 16. Reverse recovery timing definition
VGS = 0 V
Fig. 15. Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
8 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
11. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
SOT1210
E
A
e
1
A
c
1
b
1
L
1
D
2
mounting
base
D
1
(D)
H
E
1
L
1
4
X
b
w
A
e
c
A
C
1
Lp
y
C
detail X
0
1
2.5
5 mm
scale
Dimensions
(1)
(1)
(1)
(1)
E
Unit
A
A
b
b
1
c
c
D ref
2.60
D
D
E
e
e
H
L
L
L
p
w
y
1
1
2
1
1
1
max 0.90 0.10 0.35 2.4 0.20 0.30
nom
2.35
1.90
3.40 2.45
3.20 2.00
3.40 0.65 0.25 0.50
3.20 0.45 0.13 0.30
mm
0.50
0.65 0.65
0.20 0.10
0.80 0.00 0.25 2.2 0.10 0.20
min
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
sot1210_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-04-25
16-08-09
SOT1210
Fig. 17. Package outline LFPAK33 (SOT1210)
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
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Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
12. Soldering
Footprint information for reflow soldering of LFPAK33 package
SOT1210
2.35
2.25
0.635 0.617
0.05 (all around)
1.05
0.62
0.75
1.91
0.51
2.47
3.9
0.51
0.6
0.83
0.4 (x8)
0.3 (x8)
0.65 (x6)
0.25 (x6)
solder paste
aperture
solder land
Notes : 1. Dimensions in mm
occupied area
solder resist
sot1210_fr
Fig. 18. Reflow soldering footprint for LFPAK33 (SOT1210)
©
PSMN3R3-40MLH
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Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
10 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
injury, death or severe property or environmental damage. Nexperia and its
suppliers accept no liability for inclusion and/or use of Nexperia products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
13. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
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with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
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data sheet shall define the specification of the product as agreed between
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to be accurate and reliable. However, Nexperia does not give any
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states that this specific Nexperia product is automotive qualified, the
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accordance with automotive testing or application requirements. Nexperia
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
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profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s own risk,
and (c) customer fully indemnifies Nexperia for any liability, damages or failed
product claims resulting from customer design and use of the product for
automotive applications beyond Nexperia’s standard warranty and Nexperia’s
product specifications.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
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between the translated and English versions.
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
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Trademarks
Suitability for use — Nexperia products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction
of an Nexperia product can reasonably be expected to result in personal
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
11 / 12
Nexperia
PSMN3R3-40MLH
N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 4
10. Characteristics............................................................4
11. Package outline.......................................................... 9
12. Soldering................................................................... 10
13. Legal information......................................................11
© Nexperia B.V. 2019. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 11 November 2019
©
PSMN3R3-40MLH
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2019. All rights reserved
Product data sheet
11 November 2019
12 / 12
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