PSMP061-60YE [NEXPERIA]
60 V, P-channel Trench MOSFETProduction;型号: | PSMP061-60YE |
厂家: | Nexperia |
描述: | 60 V, P-channel Trench MOSFETProduction |
文件: | 总15页 (文件大小:276K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PSMP061-60YE
60 V, P-channel Trench MOSFET
13 January 2021
Product data sheet
1. General description
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device
(SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
•
High thermal power dissipation capability
•
•
Suitable for thermally demanding environments due to 175 °C rating
Trench MOSFET technology
3. Applications
•
•
•
•
Reverse battery protection
Power management
High-side load switch
Motor drive
4. Quick reference data
Table 1. Quick reference data
Symbol
VDS
VGS
ID
Parameter
Conditions
Min
Typ
Max
-60
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-
-20
V
VGS = -10 V; Tmb = 25 °C
-
-
-25
66
A
Ptot
total power dissipation Tmb = 25 °C
W
Static characteristics
RDSon drain-source on-state
resistance
VGS = -10 V; ID = -4.7 A; Tj = 25 °C
-
48
61
mΩ
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
1
Symbol
Description
source
source
source
gate
Simplified outline
Graphic symbol
S
S
S
G
D
mb
D
2
G
3
4
S
1
2 3 4
mb
mounting base; connected
to drain
017aaa094
LFPAK56; Power-
SO8 (SOT669)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
Version
PSMP061-60YE
LFPAK56;
plastic, single-ended surface-mounted package; 4 terminals
SOT669
Power-SO8
7. Marking
Table 4. Marking codes
Type number
Marking code
06160YE
PSMP061-60YE
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PSMP061-60YE
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Product data sheet
13 January 2021
2 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
-
Max
-60
20
Unit
V
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
VGS
-20
-
V
ID
VGS = -10 V; Tmb = 25 °C
VGS = -10 V; Tmb = 100 °C
single pulse; tp ≤ 10 µs; Tmb = 25 °C
Tmb = 25 °C
-25
-17.7
-90
66
A
-
A
IDM
Ptot
Tj
peak drain current
-
A
total power dissipation
junction temperature
ambient temperature
storage temperature
-
W
°C
°C
°C
-55
-55
-65
175
175
175
Tamb
Tstg
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
-25
-90
A
A
ISM
single pulse; tp ≤ 10 µs; Tmb = 25 °C
ESD maximum rating
VESD electrostatic discharge
voltage
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
HBM
[1]
-
-
800
61
V
Tj(init) = 25 °C; ID = -4.6 A; DUT in
mJ
source avalanche energy avalanche (unclamped)
[1] Measured between all pins.
120
aaa-030121
aaa-030122
120
P
der
(%)
I
der
(%)
80
80
40
40
0
-75
0
-75
25
125
225
25
125
225
T
(°C)
T
(°C)
mb
mb
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
Fig. 2. Normalized continuous drain current as a
function of mounting base temperature
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PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
3 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
aaa-032670
3
-10
I
D
(A)
Limit R
DSon
= V /I
DS
D
2
t
= 10 µs
-10
p
100 µs
1 ms
-10
-1
-1
DC; T = 25 °C
mb
10 ms
-10
100 ms
-2
-10
2
-1
-10
-10
V
(V)
DS
Fig. 3. Safe operating area; junction to mounting base; continuous and peak drain currents as a function of
drain-source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
99
Max
109
52
Unit
K/W
K/W
K/W
Rth(j-a)
thermal resistance from in free air
junction to ambient
[1]
[2]
-
-
-
47
Rth(j-mb)
thermal resistance from
junction to mounting
base
1.8
2.3
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
aaa-031395
10
Z
th(j-mb)
(K/W)
duty cycle = 0.5
0.20
1
0.10
0.05
-1
10
10
0.02
single shot
-2
-6
10
-5
-4
-3
-2
10
-1
10
10
10
10
1
t
p
(s)
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V(BR)DSS drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-60
-
-
V
V
VGSth
gate-source threshold ID = -250 µA; VDS=VGS; Tj = 25 °C
voltage
-1.5
-2
-3
IDSS
drain leakage current
VDS = -60 V; VGS = 0 V; Tj = 25 °C
VDS = -60 V; VGS = 0 V; Tj = 125 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; ID = -4.7 A; Tj = 25 °C
VGS = -10 V; ID = -4.7 A; Tj = 175 °C
VGS = -4.5 V; ID = -3.8 A; Tj = 25 °C
VDS = -10 V; ID = -4 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
-10
-100
100
61
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
48
100
62
65
130
93
gfs
forward
-
transconductance
RG
gate resistance
f = 1 MHz; Tj = 25 °C
-
12
-
Ω
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = -30 V; ID = -4.7 A; VGS = -10 V;
Tj = 25 °C
-
-
-
-
-
-
20
30
-
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
3.3
4.3
1060
85
-
VDS = -30 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
-
Coss
Crss
-
reverse transfer
capacitance
49
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -30 V; ID = -4.7 A; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
12
-
-
-
-
ns
ns
ns
ns
58
turn-off delay time
fall time
21
204
Source-drain diode
VSD
trr
source-drain voltage
IS = -22.4 A; VGS = 0 V; Tj = 25 °C
-
-
-
-0.7
30
-1.2
V
reverse recovery time IS = -22.4 A; dIS/dt = 100 A/µs;
-
-
ns
nC
VGS = -10 V; VDS = -30 V; Tj = 25 °C
Qr
recovered charge
37
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PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
aaa-030756
aaa-030757
-3
-4
-5
-6
-50
-10
I
D
(A)
I
D
(A)
-40
V
= -10 V
-4.5 V
GS
-10
-30
-20
-10
0
Min Typ
Max
-3.8 V
-10
-10
-3.4 V
-3.0 V
-3.2 V
-2.8 V
0
-1
-2
-3
-4
-5
0
-0.5
-1.0 -1.5 -2.0
-2.5 -3.0
-3.5
(V)
V
(V)
V
DS
GS
Tj = 25 °C
VDS = -5 V; Tj = 25 °C
Fig. 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 6. Sub-threshold drain current as a function of
gate-source voltage
aaa-030758
aaa-030759
300
300
-3.0 V
R
DSon
(mΩ)
R
DSon
(mΩ)
-3.2 V
-3.4 V
-3.8 V
200
200
T = 175 °C
j
100
100
-4.5 V
T = 25 °C
j
V
= -10 V
-30
GS
0
0
0
-10
-20
-40
-50
0
-1
-2
-3
-4
-5
I
(A)
V
(V)
GS
D
Tj = 25 °C
ID = -4.8 A
Fig. 7. Drain-source on-state resistance as a function Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
of gate-source voltage; typical values
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
aaa-030760
aaa-030761
-25
2.5
2.0
1.5
1.0
0.5
0
I
a
D
(A)
-20
-15
-10
-5
T = 25 °C
T = 175 °C
j
j
0
0
-1
-2
-3
-4
-5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS = -10 V
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 10. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-030762
aaa-030763
4
-3.5
10
V
GS(th)
(V)
Max
C
(pF)
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
3
2
C
iss
10
Typ
Min
10
C
C
oss
rss
10
-1
-10
2
-60
0
60
120
180
-1
-10
-10
T (°C)
j
V
(V)
DS
ID = -250 μA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 11. Gate-source threshold voltage as a function of Fig. 12. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
7 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
aaa-030764
-10
V
(V)
V
GS
DS
-8
I
D
-6
-4
-2
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
0
0
Q
Q
GS
GD
5
10
15
20
Q
25
(nC)
G
Q
G(tot)
003aaa508
VDS = -30 V; ID = -4.8 A; Tamb = 25 °C
Fig. 14. Gate charge waveform definitions
Fig. 13. Gate-source voltage as a function of gate
charge; typical values
aaa-030765
-20
I
S
(A)
-15
-10
-5
T = 175 °C
j
T = 25 °C
j
0
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
Fig. 15. Source current as a function of source-drain voltage; typical values
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 16. Duty cycle definition
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62 2.0 0.7 0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 17. Package outline LFPAK56; Power-SO8 (SOT669)
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PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
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Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
0.6
(3×)
(4×)
0.25
(2×)
0.25
(2×)
3.5
3.45
0.6
2.55
(3×)
2
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder paste
solder lands
125 µm stencil
occupied area
Dimensions in mm
solder resist
sot669_fr
Fig. 18. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
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PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
11 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
Wave soldering footprint information for LFPAK56 package
SOT669
4.826
1.78
1.72
2.1
1.4
0.6 (x4)
1.27
0.635
solder lands
Dimensions in mm
15-04-13
Issue date
15-04-16
sot669_fw
Fig. 19. Wave soldering footprint for LFPAK56; Power-SO8 (SOT669)
©
PSMP061-60YE
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Product data sheet
13 January 2021
12 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
20210113
Data sheet status
Change notice
Supersedes
PSMP061-60YE v.1
Product data sheet
-
-
©
PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
13 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
injury, death or severe property or environmental damage. Nexperia and its
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such equipment or applications and therefore such inclusion and/or use is at
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15. Legal information
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Data sheet status
Document status Product
Definition
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
[1][2]
status [3]
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
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and products using Nexperia products, and Nexperia accepts no liability for
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minimize the risks associated with their applications and products.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
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or problem which is based on any weakness or default in the customer’s
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multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
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PSMP061-60YE
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Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
14 / 15
Nexperia
PSMP061-60YE
60 V, P-channel Trench MOSFET
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking..........................................................................2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................5
11. Test information..........................................................9
12. Package outline........................................................ 10
13. Soldering................................................................... 11
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2021. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 13 January 2021
©
PSMP061-60YE
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2021. All rights reserved
Product data sheet
13 January 2021
15 / 15
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