PUMB30 [NEXPERIA]
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction;型号: | PUMB30 |
厂家: | Nexperia |
描述: | PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction 放大器 光电二极管 晶体管 |
文件: | 总11页 (文件大小:186K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
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use http://www.nexperia.com
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
PEMB30; PUMB30
PNP/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 2 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)
plastic packages
Table 1.
Product overview
Type number
Package
NXP
NPN/PNP
complement
NPN/NPN
complement
JEITA
-
PEMB30
PUMB30
SOT666
SOT363
PEMD30
PUMD30
PEMH30
PUMH30
SC-88
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Reduces component count
I Reduces pick and place costs
I Simplifies circuit design
1.3 Applications
I Low current peripheral driver
I Cost-saving alternative for BC857BS
and BC857BV
I Control of IC inputs
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO collector-emitter voltage
IO
open base
-
-
−50
V
output current
-
-
−100
2.86
mA
kΩ
R1
bias resistor 1 (input)
1.54
2.2
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2. Pinning information
Table 3.
Pinning
Pin
1
Description
Simplified outline
Symbol
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
6
5
4
6
5
4
2
3
R1
4
TR2
TR1
5
1
2
3
R1
6
001aab555
1
2
3
006aaa268
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
-
Description
Version
SOT666
SOT363
PEMB30
PUMB30
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 6 leads
SC-88
4. Marking
Table 5.
Marking codes
Type number
PEMB30
Marking code[1]
2T
PUMB30
*B2
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
2 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
VEBO
IO
collector-base voltage
open emitter
open base
-
-
-
-
-
−50
−50
−5
V
collector-emitter voltage
emitter-base voltage
output current
V
open collector
V
−100
−100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
-
200
200
mW
mW
[1][2]
SOT666
Per device
Ptot
total power dissipation
SOT363
Tamb ≤ 25 °C
[1]
-
300
mW
mW
°C
[1][2]
SOT666
-
300
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from
in free air
junction to ambient
[1]
SOT363
-
-
-
-
625
625
K/W
K/W
[1][2]
SOT666
Per device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT363
SOT666
-
-
-
-
416
416
K/W
K/W
[1][2]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
3 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = −50 V; IE = 0 A
-
-
−100 nA
ICEO
collector-emitter cut-off VCE = −30 V; IB = 0 A
-
-
-
-
−1
µA
µA
current
VCE = −30 V; IB = 0 A;
−50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100 nA
hFE
DC current gain
VCE = −5 V; IC = −20 mA
IC = −10 mA; IB = −0.5 mA
30
-
-
-
-
VCEsat
collector-emitter
−150 mV
saturation voltage
R1
Cc
bias resistor 1 (input)
collector capacitance
1.54 2.2
2.86 kΩ
VCB = −10 V; IE = ie = 0 A;
-
-
3
pF
f = 1 MHz
006aaa691
006aaa692
500
−1
h
FE
(1)
400
300
200
100
0
V
CEsat
(V)
(2)
(3)
−1
−10
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
4 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
8. Package outline
2.2
1.8
1.1
0.8
1.7
1.5
0.6
0.5
0.45
0.15
6
5
4
6
5
4
0.3
0.1
2.2 1.35
2.0 1.15
1.7 1.3
1.5 1.1
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.18
0.08
0.27
0.17
0.65
0.5
1.3
1
Dimensions in mm
06-03-16
Dimensions in mm
04-11-08
Fig 3. Package outline SOT363 (SC-88)
Fig 4. Package outline SOT666
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 4000 8000 10000
PEMB30
SOT666 2 mm pitch, 8 mm tape and reel
-
-
-315
-
4 mm pitch, 8 mm tape and reel
SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-
-115
-
-
-
-
[2]
[3]
PUMB30
-115
-125
-
-
-135
-165
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
5 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
10. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
0.6
(4×)
Dimensions in mm
1.8
sot363_fr
Dimensions in mm
Fig 5. Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 6. Wave soldering footprint SOT363 (SC-88)
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
6 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2.75
2.45
2.1
1.6
solder lands
0.4
(6×)
0.3
(2×)
0.25
(2×)
placement area
0.538
0.55
(2×)
1.075
1.7
2
solder paste
occupied area
0.325 0.375
(4×) (4×)
Dimensions in mm
1.7
0.45
0.6
(4×)
(2×)
0.5
0.65
(4×)
(2×)
sot666_fr
Reflow soldering is the only recommended soldering method.
Fig 7. Reflow soldering footprint SOT666
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
7 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
11. Revision history
Table 10. Revision history
Document ID
Release date
20090902
Data sheet status
Change notice
Supersedes
PEMB30_PUMB30_2
Modifications:
Product data sheet
-
PEMB30_PUMB30_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 3 “Package outline SOT363 (SC-88)”: updated
• Figure 5 “Reflow soldering footprint SOT363 (SC-88)”: updated
• Figure 6 “Wave soldering footprint SOT363 (SC-88)”: updated
• Figure 7 “Reflow soldering footprint SOT666”: updated
PEMB30_PUMB30_1
20060331
Product data sheet
-
-
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
8 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PEMB30_PUMB30_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 2 September 2009
9 of 10
PEMB30; PUMB30
NXP Semiconductors
PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Packing information. . . . . . . . . . . . . . . . . . . . . . 5
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 September 2009
Document identifier: PEMB30_PUMB30_2
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