PUMB30 [NEXPERIA]

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction;
PUMB30
型号: PUMB30
厂家: Nexperia    Nexperia
描述:

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction

放大器 光电二极管 晶体管
文件: 总11页 (文件大小:186K)
中文:  中文翻译
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Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and  
understanding,  
Kind regards,  
Team Nexperia  
PEMB30; PUMB30  
PNP/PNP double resistor-equipped transistors;  
R1 = 2.2 k, R2 = open  
Rev. 02 — 2 September 2009  
Product data sheet  
1. Product profile  
1.1 General description  
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)  
plastic packages  
Table 1.  
Product overview  
Type number  
Package  
NXP  
NPN/PNP  
complement  
NPN/NPN  
complement  
JEITA  
-
PEMB30  
PUMB30  
SOT666  
SOT363  
PEMD30  
PUMD30  
PEMH30  
PUMH30  
SC-88  
1.2 Features  
I 100 mA output current capability  
I Built-in bias resistors  
I Reduces component count  
I Reduces pick and place costs  
I Simplifies circuit design  
1.3 Applications  
I Low current peripheral driver  
I Cost-saving alternative for BC857BS  
and BC857BV  
I Control of IC inputs  
1.4 Quick reference data  
Table 2.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per transistor  
VCEO collector-emitter voltage  
IO  
open base  
-
-
50  
V
output current  
-
-
100  
2.86  
mA  
kΩ  
R1  
bias resistor 1 (input)  
1.54  
2.2  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
2. Pinning information  
Table 3.  
Pinning  
Pin  
1
Description  
Simplified outline  
Symbol  
GND (emitter) TR1  
input (base) TR1  
output (collector) TR2  
GND (emitter) TR2  
input (base) TR2  
output (collector) TR1  
6
5
4
6
5
4
2
3
R1  
4
TR2  
TR1  
5
1
2
3
R1  
6
001aab555  
1
2
3
006aaa268  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
SOT666  
SOT363  
PEMB30  
PUMB30  
plastic surface-mounted package; 6 leads  
plastic surface-mounted package; 6 leads  
SC-88  
4. Marking  
Table 5.  
Marking codes  
Type number  
PEMB30  
Marking code[1]  
2T  
PUMB30  
*B2  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
2 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
Per transistor  
VCBO  
VCEO  
VEBO  
IO  
collector-base voltage  
open emitter  
open base  
-
-
-
-
-
50  
50  
5  
V
collector-emitter voltage  
emitter-base voltage  
output current  
V
open collector  
V
100  
100  
mA  
mA  
ICM  
peak collector current  
single pulse;  
tp 1 ms  
Ptot  
total power dissipation  
SOT363  
Tamb 25 °C  
[1]  
-
-
200  
200  
mW  
mW  
[1][2]  
SOT666  
Per device  
Ptot  
total power dissipation  
SOT363  
Tamb 25 °C  
[1]  
-
300  
mW  
mW  
°C  
[1][2]  
SOT666  
-
300  
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
-
+150  
150  
°C  
Tamb  
65  
+150  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Reflow soldering is the only recommended soldering method.  
6. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max Unit  
Rth(j-a)  
thermal resistance from  
in free air  
junction to ambient  
[1]  
SOT363  
-
-
-
-
625  
625  
K/W  
K/W  
[1][2]  
SOT666  
Per device  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
[1]  
SOT363  
SOT666  
-
-
-
-
416  
416  
K/W  
K/W  
[1][2]  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Reflow soldering is the only recommended soldering method.  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
3 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per transistor  
Conditions  
Min  
Typ  
Max Unit  
ICBO  
collector-base cut-off  
current  
VCB = 50 V; IE = 0 A  
-
-
100 nA  
ICEO  
collector-emitter cut-off VCE = 30 V; IB = 0 A  
-
-
-
-
1  
µA  
µA  
current  
VCE = 30 V; IB = 0 A;  
50  
Tj = 150 °C  
IEBO  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
100 nA  
hFE  
DC current gain  
VCE = 5 V; IC = 20 mA  
IC = 10 mA; IB = 0.5 mA  
30  
-
-
-
-
VCEsat  
collector-emitter  
150 mV  
saturation voltage  
R1  
Cc  
bias resistor 1 (input)  
collector capacitance  
1.54 2.2  
2.86 kΩ  
VCB = 10 V; IE = ie = 0 A;  
-
-
3
pF  
f = 1 MHz  
006aaa691  
006aaa692  
500  
1  
h
FE  
(1)  
400  
300  
200  
100  
0
V
CEsat  
(V)  
(2)  
(3)  
1  
10  
(1)  
(2)  
(3)  
2  
10  
1  
2
1  
2
10  
1  
10  
10  
10  
1  
10  
10  
I
(mA)  
I (mA)  
C
C
VCE = 5 V  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
Fig 1. DC current gain as a function of collector  
current; typical values  
Fig 2. Collector-emitter saturation voltage as a  
function of collector current; typical values  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
4 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
8. Package outline  
2.2  
1.8  
1.1  
0.8  
1.7  
1.5  
0.6  
0.5  
0.45  
0.15  
6
5
4
6
5
4
0.3  
0.1  
2.2 1.35  
2.0 1.15  
1.7 1.3  
1.5 1.1  
pin 1  
index  
pin 1 index  
1
2
3
1
2
3
0.25  
0.10  
0.3  
0.2  
0.18  
0.08  
0.27  
0.17  
0.65  
0.5  
1.3  
1
Dimensions in mm  
06-03-16  
Dimensions in mm  
04-11-08  
Fig 3. Package outline SOT363 (SC-88)  
Fig 4. Package outline SOT666  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package Description Packing quantity  
3000 4000 8000 10000  
PEMB30  
SOT666 2 mm pitch, 8 mm tape and reel  
-
-
-315  
-
4 mm pitch, 8 mm tape and reel  
SOT363 4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
-
-115  
-
-
-
-
[2]  
[3]  
PUMB30  
-115  
-125  
-
-
-135  
-165  
[1] For further information and the availability of packing methods, see Section 13.  
[2] T1: normal taping  
[3] T2: reverse taping  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
5 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
10. Soldering  
2.65  
solder lands  
0.4 (2×)  
1.5  
2.35  
0.6  
(4×)  
0.5  
(4×)  
solder resist  
solder paste  
0.5  
(4×)  
0.6  
(2×)  
occupied area  
0.6  
(4×)  
Dimensions in mm  
1.8  
sot363_fr  
Dimensions in mm  
Fig 5. Reflow soldering footprint SOT363 (SC-88)  
1.5  
solder lands  
solder resist  
occupied area  
2.5  
0.3  
4.5  
1.5  
Dimensions in mm  
preferred transport  
direction during soldering  
1.3  
1.3  
2.45  
5.3  
sot363_fw  
Fig 6. Wave soldering footprint SOT363 (SC-88)  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
6 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
2.75  
2.45  
2.1  
1.6  
solder lands  
0.4  
(6×)  
0.3  
(2×)  
0.25  
(2×)  
placement area  
0.538  
0.55  
(2×)  
1.075  
1.7  
2
solder paste  
occupied area  
0.325 0.375  
(4×) (4×)  
Dimensions in mm  
1.7  
0.45  
0.6  
(4×)  
(2×)  
0.5  
0.65  
(4×)  
(2×)  
sot666_fr  
Reflow soldering is the only recommended soldering method.  
Fig 7. Reflow soldering footprint SOT666  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
7 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
11. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20090902  
Data sheet status  
Change notice  
Supersedes  
PEMB30_PUMB30_2  
Modifications:  
Product data sheet  
-
PEMB30_PUMB30_1  
This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
Figure 3 “Package outline SOT363 (SC-88)”: updated  
Figure 5 “Reflow soldering footprint SOT363 (SC-88)”: updated  
Figure 6 “Wave soldering footprint SOT363 (SC-88)”: updated  
Figure 7 “Reflow soldering footprint SOT666”: updated  
PEMB30_PUMB30_1  
20060331  
Product data sheet  
-
-
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
8 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
12.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PEMB30_PUMB30_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 2 September 2009  
9 of 10  
PEMB30; PUMB30  
NXP Semiconductors  
PNP/PNP double resistor-equipped transistors; R1 = 2.2 k, R2 = open  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Packing information. . . . . . . . . . . . . . . . . . . . . . 5  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . . 9  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 2 September 2009  
Document identifier: PEMB30_PUMB30_2  

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