PZTA14 [NEXPERIA]

NPN Darlington transistorProduction;
PZTA14
型号: PZTA14
厂家: Nexperia    Nexperia
描述:

NPN Darlington transistorProduction

放大器 光电二极管 晶体管
文件: 总8页 (文件大小:275K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Important notice  
Dear Customer,  
On 7 February 2017 the former NXP Standard Product business became a new company with the  
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  
application markets  
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  
the references to Nexperia, as shown below.  
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,  
use http://www.nexperia.com  
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use  
salesaddresses@nexperia.com (email)  
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  
the version, as shown below:  
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  
reserved  
Should be replaced with:  
- © Nexperia B.V. (year). All rights reserved.  
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
handbook, halfpage  
PZTA14  
NPN Darlington transistor  
Product data sheet  
1999 Apr 14  
Supersedes data of 1997 Sep 04  
NXP Semiconductors  
Product data sheet  
NPN Darlington transistor  
PZTA14  
FEATURES  
PINNING  
High current (max. 500 mA)  
Low voltage (max. 30 V).  
PIN  
1
DESCRIPTION  
base/input  
2, 4  
3
collector/output  
emitter/ground  
APPLICATIONS  
Pre-amplifiers requiring high input impedance.  
DESCRIPTION  
handbook, halfpage  
4
1
2, 4  
NPN Darlington transistor in a SOT223 plastic package.  
PNP complement: PZTA64.  
TR1  
TR2  
3
1
2
3
MAM319  
Top view  
Fig.1 Simplified outline (SOT223) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
30  
UNIT  
VCBO  
VCES  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
peak collector current  
base current (DC)  
V
V
V
VBE = 0  
30  
open collector  
10  
500  
800  
200  
1.25  
+150  
150  
+150  
mA  
mA  
mA  
W
ICM  
IB  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
Tamb 25 °C; note 1  
65  
°C  
°C  
Tamb  
65  
°C  
Note  
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
1999 Apr 14  
2
NXP Semiconductors  
Product data sheet  
NPN Darlington transistor  
PZTA14  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
100  
UNIT  
K/W  
K/W  
thermal resistance from junction to ambient  
Rth j-s  
thermal resistance from junction to soldering point  
19  
Note  
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.  
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated  
Handbook”.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
collector cut-off current  
collector cut-off current  
emitter cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN.  
MAX.  
100  
UNIT  
nA  
ICES  
IEBO  
hFE  
VBE = 0; VCE = 30 V  
IC = 0; VEB = 10 V  
VCE = 5 V; (see Fig.2)  
IC = 10 mA  
100  
100  
nA  
nA  
10000  
IC = 100 mA  
20000  
VCEsat  
VBEon  
fT  
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA  
1.5  
2
V
base-emitter on-state voltage  
transition frequency  
IC = 100 mA; VCE = 5 V  
V
IC = 10 mA; VCE = 5 V; f = 100 MHz 125  
MHz  
1999 Apr 14  
3
NXP Semiconductors  
Product data sheet  
NPN Darlington transistor  
PZTA14  
MGD837  
80000  
h
FE  
60000  
40000  
20000  
0
10  
1  
2
3
1
10  
10  
10  
I
(mA)  
C
VCE = 2 V.  
Fig.2 DC current gain; typical values.  
1999 Apr 14  
4
NXP Semiconductors  
Product data sheet  
NPN Darlington transistor  
PZTA14  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
99-09-13  
SOT223  
SC-73  
1999 Apr 14  
5
NXP Semiconductors  
Product data sheet  
NPN Darlington transistor  
PZTA14  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
1999 Apr 14  
6
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115002/00/04/pp7  
Date of release: 1999 Apr 14  
Document order number: 9397 750 05641  

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