NEXCW473Z55V107X55TRF [NIC]

V-Chip Memory Back-Up Capacitors;
NEXCW473Z55V107X55TRF
型号: NEXCW473Z55V107X55TRF
厂家: NIC-COMPONENTS CORP.    NIC-COMPONENTS CORP.
描述:

V-Chip Memory Back-Up Capacitors

文件: 总2页 (文件大小:116K)
中文:  中文翻译
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V-Chip Memory Back-Up Capacitors  
NEXCW Series  
FEATURES  
• DOUBLE LAYER CONSTRUCTION  
• POWER BACK-UP FOR CMOS DEVICES  
• SURFACE MOUNTABLE V-CHIP STYLE  
• LEAD-FREE FINISH  
RoHS Compliant  
High Temperature Reow  
+260°C  
CHARACTERISTICS  
Rated Voltage Range  
Rated Capacitance Range  
Operating Temp. Range  
Capacitance Tolerance  
3.5 & 5.5VDC  
Suppeerr CCaappaacciittoorr  
Appplliiccaattiioonn GGuuiiddee  
0.047F ~ 0.47F (47,000μF ~ 470,000μF)  
-40°C ~ +85°C  
+80%/-20% (Z)  
Δ Capacitance Change  
Maximum ESR  
Within ±30% of initial measured value  
Less than 200% of the specied maximum value  
Less than 200% of the specied maximum value  
Within +80%/-20% of specied value  
Load Life Test  
+85°C 240 hours  
Current at 30 minutes  
Δ Capacitance Change  
Maximum ESR  
Temperature Cycling  
(5 cycles, -25 ~ +70°C  
Less than specied maximum value  
Current at 30 minutes  
Δ Capacitance Change  
Maximum ESR  
Less than specied maximum value  
Within ±20% of initial measured value  
Humidity Resistance  
(240 hours @ 40°C/90% RH)  
Less than 120% of the specied maximum value  
Current at 30 minutes  
Less than 120% of the specied maximum value  
STANDARD VALUES AND SPECIFICATIONS  
Capacitance Working  
Max. Current  
@ 30 minutes  
(mA)  
Max. ESR  
@ 1KHz  
(Ω)  
NIC P/N  
Value (F)  
Discharge  
Voltage  
(VDC)  
NEXCW104Z3.5V10.7X5.5TRF  
NEXCW224Z3.5V10.7X5.5TRF  
NEXCW474Z3.5V10.7X8.5TRF  
NEXCW473Z5.5V10.7X5.5TRF  
NEXCW104Z5.5V10.7X5.5TRF  
NEXCW224Z5.5V10.7X8.5TRF  
0.10  
0.22  
0.47  
0.047  
0.10  
0.22  
3.5  
3.5  
3.5  
5.5  
5.5  
5.5  
0.090  
0.200  
0.420  
0.071  
0.150  
0.330  
100  
50  
50  
100  
50  
50  
HIGH TEMPERATURE REFLOW PROFILE  
Peak Temperature  
(260°C)  
Peak Temperature  
Time above +255°C  
Time above +230°C  
Time above +220°C  
Time above +217°C  
+260°C  
250  
200  
150  
10 sec. max.  
45 sec. max.  
60 sec. max.  
70 sec. max.  
Time above  
217°C  
70 sec. max.  
100  
50  
Cool Down  
Time above 170°C  
50 sec. max.  
150°C ~ +200°C  
(with time above +170°C  
50 sec. max.)  
Pre-heat  
150°C ~ 200°C 150 sec. max.  
25  
150 sec. max.  
0
Time  
1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals.  
2. 2x reow process maximum. Capacitor should be allowed to return to room temperature before second reow process.  
WASHING is NOT RECOMMENDED. Additional precautions can be found at  
www.niccomp.com/precautions  
If in doubt or uncertainty, please review your specic application - process details  
with NIC’s technical support personnel: tpmg@niccomp.com  
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com  
1
SPECIFICATIONS ARE SUBJECT TO CHANGE  
V-Chip Memory Back-Up Capacitors  
NEXCW Series  
CASE DIMENSIONS (mm)  
I
+
-
I
I
Dφ ±  
10.7  
10.7  
W
Case Size  
10.7 x 5.5  
10.7 x 8.5  
L max. A/B ±0.2  
I
P
5.5  
8.5  
10.8  
10.8  
3.9 ±0.5 1.2 ± 0.1 5.0  
3.9 ±0.5 1.2 ± 0.1 5.0  
w
Dφ  
A
0.3mm max.  
L
P
B
LAND PATTERN DIMENSIONS (mm)  
COMPONENT OUTLINE  
Case  
R
S
T
Diameter  
T
10.7  
5.0  
4.9  
2.5  
S
S
R
CARRIER TAPE DIMENSIONS (mm)  
Case Size  
10.7 x 5.5  
10.7 x 8.5  
A
11.4  
11.4  
B
13.0  
13.0  
D
1.55  
1.55  
E
1.75  
1.75  
F
11.5  
11.5  
P
4.0  
4.0  
P1  
16.0  
16.0  
T1  
0.4  
0.4  
T2  
6.0  
8.4  
W
24.0  
24.0  
Quantity/Reel  
1,000  
500  
P
T1  
D
E
-
F
W
B
+
P1  
A
T2  
Feeding  
REEL DIMENSIONS (mm)  
Case Size  
10.7 x 5.5  
10.7 x 8.5  
A ± 2.0  
380  
380  
B ± 1.0  
80.0  
100.0  
C ± 0.5  
13.0  
13.0  
D ± 0.8  
21.0  
21.0  
E ± 0.5  
2.0  
2.0  
W
t
25.5 ± 0.5  
25.5 ± 1.0  
2.0  
2.0  
t
C
E
B
A
W
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com  
2
SPECIFICATIONS ARE SUBJECT TO CHANGE  

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