C10T03QLH-11A [NIEC]
Schottky Barrier Diode; 肖特基二极管
| 型号： | C10T03QLH-11A |
| 厂家： | 
NIHON INTER ELECTRONICS CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总6页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SBD T y p e : C10T03QLH-11A
OUTLINE DRAWING
FEATURES
*Tabless TO-220
*Dual Diodes – Cathode Common
*Low Forward Voltage Drop
*High Surge Capability
*Tj=150 °C operation
Maximum Ratings
Approx Net Weight: 1.45g
C10T03QLH-11A
Rating
Symbol
Unit
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
VRRM
VRRSM
30
V
V
35(pulse width ≤ 1µs duty ≤ 1/50)
50 Hz Full Sine Wave
Resistive Load
Average Rectified Output Current
RMS Forward Current
IO
10
Tc=129°C
A
A
A
IF(RMS)
IFSM
11.1
50Hz Full Sine Wave ,1cycle
Non-repetitive
Surge Forward Current
120
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
-40 to +150
-40 to +150
°C
°C
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current
Symbol
Conditions
Min. Typ. Max. Unit
Tj= 25°C, VRM= VRRM
per arm
IRM
-
-
1
mA
Tj= 25°C, IFM= 5 A
per arm
Peak Forward Voltage
Thermal Resistance
VFM
-
-
-
-
0.57
3
V
Rth(j-c) Junction to Case
°C /W
C_T_ 11A OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
C10T03QLH/C10T03QLH-11A (per Arm)
20
10
5
2
1
Tj=25°C
Tj=150°C
0.5
0
0.2
0.4
0.6
0.8
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
C10T03QLH/C10T03QLH-11A (Total)
7
6
5
4
3
2
1
0
RECT 180°
SINE WAVE
0
2
4
6
8
10
12
AVERAGE FORWARD CURRENT (A)
PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE
Tj= 150 °C
C10T03QLH/C10T03QLH-11A (per Arm)
50
20
10
0
5
10
15
20
25
30
35
PEAK REVERSE VOLTAGE (V)
AVERAGE REVERSE POWER DISSIPATION
C10T03QLH/C10T03QLH-11A (Total)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
RECT 180°
SINE WAVE
0
5
10
15
20
25
30
35
REVERSE VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
VRM=30 V
C10T03QLH/C10T03QLH-11A (Total)
12
10
8
RECT 180°
SINE WAVE
6
4
2
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
C10T03QLH/C10T03QLH-11A
140
120
100
80
60
40
I
FSM
20
0.02s
0
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
JUNCTION CAPACITANCE VS. REVERSE VOLTAGE
Tj=2 5° C,Vm =20m VRMS,f=100 kHz,Typica l Value
C10T03QLH/C10T03QLH-11A (per Arm)
1000
500
200
100
0.5
1
2
5
10
20
50
REVERSE VOLTAGE (V)
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