C16T60FTRLH [NIEC]
Rectifier Diode, 1 Phase, 2 Element, 16A, 600V V(RRM), Silicon, TO-263AB,;型号: | C16T60FTRLH |
厂家: | NIHON INTER ELECTRONICS CORPORATION |
描述: | Rectifier Diode, 1 Phase, 2 Element, 16A, 600V V(RRM), Silicon, TO-263AB, 整流二极管 快速恢复二极管 |
文件: | 总4页 (文件大小:53K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FRD Type : C16T60F
OUTLINE DRAWING
FEATURES
* SQUARE-PAK TO263AB Case (SMD)
Packaged in 24mm Tape and Reel
* Dual Diodes – Cathode Common
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* High Surge Capability
* 200 Volts thru 600 Volts Types Available
Maximum Ratings
Approx Net Weight:1.4g
C16T60F
Symbol
VRRM
IO
IF(RMS)
IFSM
Unit
V
Rating
Repetitive Peak Reverse Voltage
600
50 Hz,Full Sine Wave
Resistive Load
Average Rectified Output Current
RMS Forward Current
16
Tc=94°C
A
A
A
17.7
50 Hz Full Sine Wave,1cycle
Non-repetitive
Surge Forward Current
120
Operating JunctionTemperature Range
Storage Temperature Range
Tjw
Tstg
- 40 to + 150
- 40 to + 150
°C
°C
Electrical • Thermal Characteristics
Symbol
Conditions
Min. Typ. Max. Unit
Characteristics
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
IRM
VFM
Tj=25°C,VRM=VRRM per Arm
Tj=25°C, IFM=8A per Arm
IFM= 8 A,
-
-
-
-
30
1.7
µA
V
trr
-
-
-
-
50
2
ns
-di/dt= 50 A/µs, Ta= 25°C
Rth(j-c) Junction to Case
°C/W
C_T_ OUTLINE DRAWING (Dimensions in mm)
FORWARD CURRENT VS. VOLTAGE
C16T60F/C16T60F-11A (per Arm)
100
50
20
10
5
2
1
Tj=25°C
Tj=150°C
0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
INSTANTANEOUS FORWARD VOLTAGE (V)
0°
180°
q
AVERAGE FORWARD POWER DISSIPATION
CONDUCTION ANGLE
C16T60F/C16T60F-11A (Total)
30
25
20
15
10
5
RECT 180°
SINE WAVE
0
0
4
8
12
16
AVERAGE FORWARD CURRENT (A)
0°
180°
q
AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE
CONDUCTION ANGLE
C16T60F/C16T60F-11A (Total)
20
16
12
8
RECT 180°
SINE WAVE
4
0
0
25
50
75
100
125
150
CASE TEMPERATURE (°C)
SURGE CURRENT RATINGS
f=50Hz,Sine Wave,Non-Repetitive,No Load
C16T60F/C16T60F-11A
140
120
100
80
60
40
I
FSM
20
0.02s
0
0.02
0.05
0.1
0.2
0.5
1
2
TIME (s)
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